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TIP2955 Equivalent & Substitute Parts
Part Overview
The TIP2955 is a PNP bipolar junction transistor manufactured by Central Semiconductor Corp, designed for high-current switching and amplification applications. This device features a maximum collector current of 15 A, collector-emitter breakdown voltage of 100 V, and maximum power dissipation of 90 W in a Through Hole TO-218-3 package. The TIP2955 is classified as obsolete, making identification of suitable substitute components necessary for ongoing design support and procurement continuity.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | PNP | — |
| Current - Collector (Ic) Max | 15 | A |
| Voltage - Collector Emitter Breakdown (Max) | 100 | V |
| DC Current Gain (hFE) Min @ Ic, Vce | 20 @ 4A, 4V | — |
| Power - Max | 90 | W |
| Frequency - Transition | 3 | MHz |
| Mounting Type | Through Hole | — |
| Package / Case | TO-218-3 | — |
| Product Status | Obsolete | — |
| RoHS Status | RoHS non-compliant | — |
Substitute Part Grouping Explanation
Substitution of the TIP2955 is determined by the following critical electrical and mechanical parameters:
Electrical Compatibility Criteria:
- Transistor polarity must remain PNP
- Collector current rating must equal or exceed 15 A
- Collector-emitter breakdown voltage must equal or exceed 100 V
- DC current gain (hFE) minimum must equal or exceed 20 @ 4A, 4V
- Maximum power dissipation must equal or exceed 90 W
Mechanical Compatibility Criteria:
- Mounting type must be Through Hole
- Package must be compatible with TO-218-3 footprint or equivalent high-current package
Compliance Considerations:
- Substitute parts should meet current regulatory standards where applicable
The TIP2955G from onsemi qualifies as a manufacturer-recommended substitute based on electrical parameter alignment and active product status, despite package variation from TO-218-3 to TO-247-3.
Parameter Comparison
| Parameter | TIP2955 (Central Semiconductor) | TIP2955G (onsemi) | Compatibility |
|---|---|---|---|
| Transistor Type | PNP | PNP | Match |
| Current - Collector (Ic) Max | 15 A | 15 A | Match |
| Voltage - Collector Emitter Breakdown (Max) | 100 V | 60 V | Derate Required |
| DC Current Gain (hFE) Min @ Ic, Vce | 20 @ 4A, 4V | 20 @ 4A, 4V | Match |
| Power - Max | 90 W | 90 W | Match |
| Frequency - Transition | 3 MHz | 2.5 MHz | Acceptable |
| Mounting Type | Through Hole | Through Hole | Match |
| Package / Case | TO-218-3 | TO-247-3 | Different Package |
| Product Status | Obsolete | Active | Substitute Available |
| RoHS Status | RoHS non-compliant | ROHS3 Compliant | Improved Compliance |
Engineering Selection Recommendations
TIP2955G (onsemi) as Primary Substitute:
The TIP2955G is the manufacturer-recommended substitute for the obsolete TIP2955. This device maintains electrical equivalence in collector current (15 A), DC current gain (20 @ 4A, 4V), and power dissipation (90 W). The TIP2955G is an active product with ROHS3 compliance, providing improved regulatory alignment compared to the non-compliant original part.
Critical Design Consideration:
The TIP2955G features a reduced collector-emitter breakdown voltage of 60 V compared to the TIP2955's 100 V rating. Applications operating at voltages approaching or exceeding 60 V require circuit redesign or voltage derating to ensure safe operation within the substitute device's electrical limits.
Package Transition:
The TIP2955G uses TO-247-3 packaging instead of TO-218-3. Both packages are Through Hole configurations suitable for high-current applications. PCB layout modifications are required to accommodate the different pin spacing and mechanical footprint of the TO-247-3 package.
Compliance Status:
The TIP2955G's ROHS3 compliance and REACH Unaffected status support long-term supply chain sustainability and regulatory adherence for new designs and production continuity.
Frequently Asked Questions (FAQ)
Q: Can the TIP2955G directly replace the TIP2955 without circuit modification?
A: Electrical substitution is possible for applications operating at collector-emitter voltages of 60 V or below. Applications requiring the full 100 V rating of the original TIP2955 require circuit redesign or voltage derating. PCB layout modification is mandatory due to TO-247-3 package differences.
Q: What is the significance of the reduced breakdown voltage in the TIP2955G?
A: The TIP2955G's 60 V maximum collector-emitter breakdown voltage is lower than the TIP2955's 100 V rating. Circuit designs must ensure operating voltages remain within this limit to prevent device damage. Voltage dividers, clamp circuits, or alternative component selection may be necessary for higher-voltage applications.
Q: Are the DC current gain specifications identical between the two devices?
A: Yes. Both the TIP2955 and TIP2955G specify a minimum DC current gain (hFE) of 20 @ 4A, 4V, ensuring equivalent biasing and switching characteristics in circuit applications.
Q: What are the package differences between TO-218-3 and TO-247-3?
A: Both are Through Hole packages for high-current transistors. The TO-247-3 package features different pin spacing and mechanical dimensions compared to TO-218-3. PCB footprint redesign is required for substitution.
Q: Does the TIP2955G's improved RoHS compliance affect electrical performance?
A: No. ROHS3 compliance reflects manufacturing process standards and material composition, not electrical performance. The TIP2955G maintains equivalent electrical specifications to the original TIP2955 within its rated voltage limits.
Q: Is the 0.5 MHz reduction in transition frequency significant?
A: The TIP2955G's 2.5 MHz transition frequency compared to the TIP2955's 3 MHz represents a minor reduction. For most switching and amplification applications, this difference is not functionally significant. High-frequency applications should verify performance through circuit simulation or testing.
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