TIP2955 Equivalent & Substitute Parts

Part Overview

The TIP2955 is a PNP bipolar junction transistor manufactured by Central Semiconductor Corp, designed for high-current switching and amplification applications. This device features a maximum collector current of 15 A, collector-emitter breakdown voltage of 100 V, and maximum power dissipation of 90 W in a Through Hole TO-218-3 package. The TIP2955 is classified as obsolete, making identification of suitable substitute components necessary for ongoing design support and procurement continuity.

Substiute Parts

TIP2955
Central Semiconductor CorpIn Stock: 24674TIP2955 Datasheet
TIP2955
Current Part
TIP2955G
onsemiIn Stock: 4653TIP2955G Datasheet
TIP2955G
MFR Recommended

Key Parameters

Parameter Value Unit
Transistor Type PNP
Current - Collector (Ic) Max 15 A
Voltage - Collector Emitter Breakdown (Max) 100 V
DC Current Gain (hFE) Min @ Ic, Vce 20 @ 4A, 4V
Power - Max 90 W
Frequency - Transition 3 MHz
Mounting Type Through Hole
Package / Case TO-218-3
Product Status Obsolete
RoHS Status RoHS non-compliant

Substitute Part Grouping Explanation

Substitution of the TIP2955 is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

  • Transistor polarity must remain PNP
  • Collector current rating must equal or exceed 15 A
  • Collector-emitter breakdown voltage must equal or exceed 100 V
  • DC current gain (hFE) minimum must equal or exceed 20 @ 4A, 4V
  • Maximum power dissipation must equal or exceed 90 W

Mechanical Compatibility Criteria:

  • Mounting type must be Through Hole
  • Package must be compatible with TO-218-3 footprint or equivalent high-current package

Compliance Considerations:

  • Substitute parts should meet current regulatory standards where applicable

The TIP2955G from onsemi qualifies as a manufacturer-recommended substitute based on electrical parameter alignment and active product status, despite package variation from TO-218-3 to TO-247-3.

Parameter Comparison

Parameter TIP2955 (Central Semiconductor) TIP2955G (onsemi) Compatibility
Transistor Type PNP PNP Match
Current - Collector (Ic) Max 15 A 15 A Match
Voltage - Collector Emitter Breakdown (Max) 100 V 60 V Derate Required
DC Current Gain (hFE) Min @ Ic, Vce 20 @ 4A, 4V 20 @ 4A, 4V Match
Power - Max 90 W 90 W Match
Frequency - Transition 3 MHz 2.5 MHz Acceptable
Mounting Type Through Hole Through Hole Match
Package / Case TO-218-3 TO-247-3 Different Package
Product Status Obsolete Active Substitute Available
RoHS Status RoHS non-compliant ROHS3 Compliant Improved Compliance

Engineering Selection Recommendations

TIP2955G (onsemi) as Primary Substitute:

The TIP2955G is the manufacturer-recommended substitute for the obsolete TIP2955. This device maintains electrical equivalence in collector current (15 A), DC current gain (20 @ 4A, 4V), and power dissipation (90 W). The TIP2955G is an active product with ROHS3 compliance, providing improved regulatory alignment compared to the non-compliant original part.

Critical Design Consideration:

The TIP2955G features a reduced collector-emitter breakdown voltage of 60 V compared to the TIP2955's 100 V rating. Applications operating at voltages approaching or exceeding 60 V require circuit redesign or voltage derating to ensure safe operation within the substitute device's electrical limits.

Package Transition:

The TIP2955G uses TO-247-3 packaging instead of TO-218-3. Both packages are Through Hole configurations suitable for high-current applications. PCB layout modifications are required to accommodate the different pin spacing and mechanical footprint of the TO-247-3 package.

Compliance Status:

The TIP2955G's ROHS3 compliance and REACH Unaffected status support long-term supply chain sustainability and regulatory adherence for new designs and production continuity.

Frequently Asked Questions (FAQ)

Q: Can the TIP2955G directly replace the TIP2955 without circuit modification?

A: Electrical substitution is possible for applications operating at collector-emitter voltages of 60 V or below. Applications requiring the full 100 V rating of the original TIP2955 require circuit redesign or voltage derating. PCB layout modification is mandatory due to TO-247-3 package differences.

Q: What is the significance of the reduced breakdown voltage in the TIP2955G?

A: The TIP2955G's 60 V maximum collector-emitter breakdown voltage is lower than the TIP2955's 100 V rating. Circuit designs must ensure operating voltages remain within this limit to prevent device damage. Voltage dividers, clamp circuits, or alternative component selection may be necessary for higher-voltage applications.

Q: Are the DC current gain specifications identical between the two devices?

A: Yes. Both the TIP2955 and TIP2955G specify a minimum DC current gain (hFE) of 20 @ 4A, 4V, ensuring equivalent biasing and switching characteristics in circuit applications.

Q: What are the package differences between TO-218-3 and TO-247-3?

A: Both are Through Hole packages for high-current transistors. The TO-247-3 package features different pin spacing and mechanical dimensions compared to TO-218-3. PCB footprint redesign is required for substitution.

Q: Does the TIP2955G's improved RoHS compliance affect electrical performance?

A: No. ROHS3 compliance reflects manufacturing process standards and material composition, not electrical performance. The TIP2955G maintains equivalent electrical specifications to the original TIP2955 within its rated voltage limits.

Q: Is the 0.5 MHz reduction in transition frequency significant?

A: The TIP2955G's 2.5 MHz transition frequency compared to the TIP2955's 3 MHz represents a minor reduction. For most switching and amplification applications, this difference is not functionally significant. High-frequency applications should verify performance through circuit simulation or testing.

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