TIP147 Equivalent & Substitute Parts Reference

Part Overview

The TIP147 is a PNP bipolar junction transistor manufactured by Central Semiconductor Corp, rated for 100 V collector-emitter breakdown voltage and 10 A maximum collector current in a TO-218 through-hole package. This component is classified as obsolete, which necessitates identification of functionally equivalent alternatives for ongoing design support and procurement continuity. The TIP147 delivers 125 W maximum power dissipation and operates across a temperature range of -65°C to 150°C junction temperature.

Substiute Parts

TIP147
Central Semiconductor CorpIn Stock: 15230TIP147 Datasheet
TIP147
Current Part
TIP147G
onsemiIn Stock: 1350TIP147G Datasheet
TIP147G
MFR Recommended

Key Parameters

Parameter Value Unit
Transistor Type PNP
Current - Collector (Ic) Max 10 A
Voltage - Collector Emitter Breakdown (Max) 100 V
DC Current Gain (hFE) Min @ Ic, Vce 1000 @ 5A, 4V
Power - Max 125 W
Operating Temperature Range -65 to 150 °C (TJ)
Mounting Type Through Hole
Package / Case TO-218-3

Substitute Part Grouping Explanation

Substitution of the TIP147 is determined by strict equivalence across the following electrical and mechanical parameters:

Electrical Equivalence Criteria:

  • Transistor polarity: PNP configuration
  • Maximum collector current: 10 A minimum
  • Collector-emitter breakdown voltage: 100 V minimum
  • DC current gain (hFE): 1000 minimum at specified conditions
  • Maximum power dissipation: 125 W minimum
  • Operating temperature range: -65°C to 150°C minimum

Mechanical Equivalence Criteria:

  • Through-hole mounting technology
  • Compatible package footprint for PCB integration

The TIP147G from onsemi satisfies all electrical parameters while maintaining through-hole mounting compatibility. The TIP147G is a PNP Darlington configuration, which represents an internal topology difference but preserves all specified electrical performance boundaries and thermal operating range.

Parameter Comparison

Parameter TIP147 (Central Semiconductor) TIP147G (onsemi) Match Status
Transistor Type PNP PNP - Darlington Equivalent
Current - Collector (Ic) Max 10 A 10 A Identical
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V Identical
DC Current Gain (hFE) Min @ Ic, Vce 1000 @ 5A, 4V 1000 @ 5A, 4V Identical
Power - Max 125 W 125 W Identical
Operating Temperature Range -65°C to 150°C -65°C to 150°C Identical
Mounting Type Through Hole Through Hole Identical
Package / Case TO-218-3 TO-247-3 Different Package
Product Status Obsolete Active Substitute is Active
RoHS Compliance Non-compliant ROHS3 Compliant Substitute is Compliant

Engineering Selection Recommendations

The TIP147G from onsemi is the designated manufacturer-recommended substitute for the obsolete TIP147. Selection of the TIP147G is supported by the following engineering factors:

Product Status: The TIP147G maintains active production status, ensuring long-term availability and supply chain continuity compared to the obsolete TIP147.

Regulatory Compliance: The TIP147G achieves ROHS3 compliance, meeting current environmental and regulatory requirements. The original TIP147 is non-compliant with RoHS directives.

Electrical Performance: All critical electrical parameters—collector current, breakdown voltage, current gain, and power dissipation—are identical between the two devices. Both operate across the full -65°C to 150°C temperature range.

Package Consideration: The TIP147G uses a TO-247-3 package instead of the TO-218-3 package. Both are through-hole packages with different mechanical footprints. PCB layout modification is required to accommodate the TO-247-3 pinout and thermal pad geometry.

Darlington Configuration: The TIP147G employs Darlington topology, which provides higher current gain but introduces a higher Vce saturation voltage (3 V @ 40 mA, 10 A) compared to the standard TIP147. This characteristic must be evaluated within the specific circuit application.

Frequently Asked Questions (FAQ)

Q: Can the TIP147G directly replace the TIP147 without PCB modification?

A: No. While electrical parameters are equivalent, the package differs: TIP147 uses TO-218-3 and TIP147G uses TO-247-3. PCB layout changes are required to accommodate the different pinout and thermal pad configuration.

Q: What is the significance of the Darlington configuration in the TIP147G?

A: The Darlington topology in the TIP147G provides higher current gain through internal transistor stacking. This does not affect the specified maximum collector current, breakdown voltage, or power rating. However, Vce saturation is higher (3 V @ 40 mA, 10 A), which may impact circuit performance in saturation-mode applications.

Q: Are the electrical specifications truly identical between TIP147 and TIP147G?

A: All specified electrical parameters match: 10 A collector current, 100 V breakdown voltage, 1000 hFE minimum, 125 W power, and -65°C to 150°C operating range. The Darlington configuration is an internal topology difference that does not alter these rated specifications.

Q: Why is RoHS compliance important for this substitution?

A: RoHS3 compliance of the TIP147G ensures the device meets current environmental regulations for lead-free manufacturing and restricted substance limits. The obsolete TIP147 is non-compliant, making the TIP147G necessary for applications subject to regulatory requirements.

Q: Is the TIP147G the only available substitute?

A: Based on the provided manufacturer data, the TIP147G is the designated manufacturer-recommended substitute. Other PNP transistors with equivalent electrical ratings may exist but are not specified in this reference.

Q: What thermal considerations apply to the package change?

A: Both TO-218-3 and TO-247-3 are through-hole packages with thermal pads for heat dissipation. The TO-247-3 package has different mechanical dimensions and thermal pad geometry. Thermal performance must be verified for the specific PCB layout and mounting configuration.

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