TIP142T Equivalent & Substitute Parts

Part Overview

The TIP142T is an NPN Darlington bipolar junction transistor manufactured by STMicroelectronics, designed for high-current switching and amplification applications. This device operates at 100 V collector-emitter breakdown voltage with a maximum collector current of 10 A and 80 W power dissipation capability. The TIP142T is housed in a TO-220-3 through-hole package and maintains Active product status with full RoHS3 compliance. Substitute parts are identified to provide alternative sourcing options when the primary part is unavailable or when inventory constraints require component alternatives that meet equivalent electrical and mechanical specifications.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN - Darlington	—
Current - Collector (Ic) (Max)	10	A
Voltage - Collector Emitter Breakdown (Max)	100	V
Power - Max	80	W
Package / Case	TO-220-3	—
Mounting Type	Through Hole	—
Operating Temperature (Max)	150	°C (TJ)
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitute parts for the TIP142T are identified based on strict equivalence of the following critical parameters:

Electrical Equivalence Criteria:

Transistor Type: NPN - Darlington configuration
Maximum Collector Current (Ic): 10 A
Maximum Collector-Emitter Breakdown Voltage: 100 V
Package / Case: TO-220-3
Mounting Type: Through Hole

Compliance Criteria:

RoHS3 Compliance status
REACH Unaffected status
Active product status

The BDX33CG from onsemi meets all electrical equivalence criteria and compliance requirements. While the BDX33CG exhibits lower maximum power dissipation (70 W versus 80 W) and different saturation characteristics, these parameters remain within acceptable substitution boundaries for the TO-220-3 Darlington transistor category. Both devices share identical voltage and current ratings, package configuration, and regulatory compliance status.

Parameter Comparison

Parameter	TIP142T (STMicroelectronics)	BDX33CG (onsemi)	Unit
Transistor Type	NPN - Darlington	NPN - Darlington	—
Current - Collector (Ic) (Max)	10	10	A
Voltage - Collector Emitter Breakdown (Max)	100	100	V
Vce Saturation (Max)	3 V @ 40 mA, 10 A	2.5 V @ 6 mA, 3 A	V
Current - Collector Cutoff (Max)	2 mA	500 µA	A / µA
DC Current Gain (hFE) (Min)	1000 @ 5 A, 4 V	750 @ 3 A, 3 V	—
Power - Max	80	70	W
Operating Temperature (Max)	150	150	°C (TJ)
Package / Case	TO-220-3	TO-220-3	—
Mounting Type	Through Hole	Through Hole	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	—
REACH Status	REACH Unaffected	REACH Unaffected	—
Product Status	Active	Active	—

Engineering Selection Recommendations

Primary Selection: TIP142T

The TIP142T remains the primary component choice based on higher maximum power dissipation (80 W), superior DC current gain characteristics (1000 @ 5 A, 4 V), and established STMicroelectronics manufacturing lineage. This device is suitable for applications requiring maximum thermal headroom and higher current gain performance.

Substitute Selection: BDX33CG

The BDX33CG from onsemi serves as a direct electrical substitute when TIP142T availability is constrained. Both devices maintain identical voltage and current ratings (100 V, 10 A), share the TO-220-3 package configuration, and comply with ROHS3 and REACH requirements. The BDX33CG exhibits lower maximum power dissipation (70 W) and reduced DC current gain (750 @ 3 A, 3 V), requiring thermal design verification in applications approaching the 80 W power envelope of the TIP142T. The BDX33CG demonstrates superior collector cutoff current performance (500 µA versus 2 mA), beneficial for low-leakage switching applications.

Both devices maintain Active product status with full regulatory compliance, ensuring long-term availability and supply chain stability.

Frequently Asked Questions (FAQ)

Q: Can the BDX33CG directly replace the TIP142T in all applications?

A: The BDX33CG is electrically equivalent for voltage and current ratings (100 V, 10 A). However, the 10 W reduction in maximum power dissipation (70 W versus 80 W) requires thermal analysis in high-power applications. Applications operating below 70 W dissipation experience no functional limitation.

Q: What are the key differences between TIP142T and BDX33CG?

A: Primary differences include maximum power dissipation (80 W versus 70 W), DC current gain (1000 versus 750), collector cutoff current (2 mA versus 500 µA), and saturation voltage characteristics. Both devices share identical voltage/current ratings, TO-220-3 packaging, and compliance certifications.

Q: Are both devices suitable for through-hole PCB assembly?

A: Yes. Both the TIP142T and BDX33CG utilize TO-220-3 through-hole packages with identical pin configurations and mounting requirements. No PCB layout modifications are required for substitution.

Q: Do both devices meet current environmental and regulatory requirements?

A: Yes. Both the TIP142T and BDX33CG maintain ROHS3 compliance and REACH Unaffected status. Both devices are classified as Active products with ongoing manufacturer support.

Q: Which device should be selected for low-leakage switching applications?

A: The BDX33CG exhibits superior collector cutoff current performance (500 µA versus 2 mA), making it preferable for applications requiring minimal leakage current in the off-state condition.

Q: What is the operating temperature range for both devices?

A: Both devices operate to a maximum junction temperature of 150°C. The BDX33CG specifies an extended operating range of −65°C to 150°C, while the TIP142T specifies 150°C maximum without explicit minimum temperature documentation.

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