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TIP142 Equivalent & Substitute Parts
Part Overview
The TIP142 is an NPN Bipolar Junction Transistor (BJT) rated for 100 V collector-emitter breakdown voltage and 10 A maximum collector current, with a maximum power dissipation of 125 W. This device is packaged in a Through Hole TO-218-3 configuration and is manufactured by Central Semiconductor Corp. The TIP142 is classified as an obsolete product, making identification of functionally equivalent alternatives necessary for ongoing design support and procurement continuity.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | NPN | — |
| Current - Collector (Ic) Max | 10 | A |
| Voltage - Collector Emitter Breakdown (Max) | 100 | V |
| DC Current Gain (hFE) Min @ Ic, Vce | 1000 @ 5A, 4V | — |
| Power - Max | 125 | W |
| Operating Temperature Range | -65 to 150 | °C (TJ) |
| Mounting Type | Through Hole | — |
| Package / Case | TO-218-3 | — |
| RoHS Status | Non-compliant | — |
| Moisture Sensitivity Level | 1 (Unlimited) | — |
Substitute Part Grouping Explanation
Substitution of the TIP142 is determined by electrical and mechanical compatibility across the following critical parameters:
Electrical Compatibility Criteria:
- Collector current rating (Ic Max): 10 A minimum
- Collector-emitter breakdown voltage (Vce Breakdown): 100 V minimum
- DC current gain (hFE): 1000 minimum at specified conditions
- Power dissipation (Pmax): 125 W minimum
- Operating temperature range: -65°C to 150°C minimum
Mechanical Compatibility Criteria:
- Mounting type: Through Hole
- Package configuration: TO-218 or TO-247 series (pin-compatible or functionally equivalent)
The substitute part identified (TIP142 by onsemi) maintains all electrical parameters within or exceeding the original specification. The primary difference is the package variant (TO-247-3 versus TO-218-3) and the internal transistor configuration (Darlington versus standard NPN), both of which are acceptable substitutions when mechanical fit and thermal management requirements are satisfied.
Parameter Comparison
| Parameter | TIP142 (Central Semiconductor) | TIP142 (onsemi) | Match Status |
|---|---|---|---|
| Transistor Type | NPN | NPN - Darlington | Compatible |
| Current - Collector (Ic) Max | 10 A | 10 A | Identical |
| Voltage - Collector Emitter Breakdown (Max) | 100 V | 100 V | Identical |
| DC Current Gain (hFE) Min @ Ic, Vce | 1000 @ 5A, 4V | 1000 @ 5A, 4V | Identical |
| Power - Max | 125 W | 125 W | Identical |
| Operating Temperature Range | -65°C to 150°C | -65°C to 150°C | Identical |
| Mounting Type | Through Hole | Through Hole | Identical |
| Package / Case | TO-218-3 | TO-247-3 | Different Package |
| RoHS Status | Non-compliant | Non-compliant | Identical |
| Moisture Sensitivity Level | 1 (Unlimited) | 1 (Unlimited) | Identical |
Engineering Selection Recommendations
The onsemi TIP142 serves as a direct electrical substitute for the Central Semiconductor TIP142. Both devices are classified as obsolete products and share identical electrical specifications across all critical parameters: 10 A collector current, 100 V breakdown voltage, 125 W power rating, and 1000 minimum DC current gain.
Package Consideration: The onsemi variant uses TO-247-3 packaging instead of TO-218-3. Both are through-hole packages with similar thermal characteristics and pin configurations suitable for high-current applications. PCB layout modifications may be required to accommodate the different package footprint.
Compliance Status: Both variants are RoHS non-compliant and carry identical REACH and ECCN classifications (REACH Unaffected, EAR99). No compliance advantage exists between the two options.
Darlington Configuration: The onsemi TIP142 incorporates Darlington transistor architecture, which provides higher current gain and lower base-emitter saturation voltage (3 V @ 40 mA, 10 A) compared to standard NPN configurations. This characteristic may improve switching efficiency in base-drive-limited applications.
Frequently Asked Questions (FAQ)
Q: Can the onsemi TIP142 directly replace the Central Semiconductor TIP142 in existing designs?
A: Electrical substitution is valid. All critical electrical parameters are identical. Physical substitution requires verification that the TO-247-3 package footprint is compatible with the PCB layout designed for TO-218-3. Pin assignments are functionally equivalent.
Q: What is the primary difference between the two TIP142 variants?
A: The Central Semiconductor version is a standard NPN transistor, while the onsemi version is a Darlington configuration. Both meet the same electrical specifications. The Darlington design offers higher current gain and lower saturation voltage, which may provide operational advantages in certain circuit topologies.
Q: Are there any compliance or certification differences between these parts?
A: No. Both devices carry identical RoHS non-compliant status, REACH Unaffected classification, and EAR99 ECCN designation. No compliance advantage exists between the two options.
Q: What package considerations apply when substituting between TO-218-3 and TO-247-3?
A: Both packages are through-hole configurations with similar thermal performance. TO-247-3 has a different physical footprint and pin spacing. PCB redesign or adapter solutions may be necessary. Verify mechanical fit, thermal management requirements, and mounting clearances before implementation.
Q: Is the Darlington configuration of the onsemi TIP142 suitable for all applications using the original TIP142?
A: The Darlington configuration maintains all specified electrical parameters and is functionally compatible. However, the lower base-emitter saturation voltage and higher current gain may affect circuit behavior in applications with tight base-drive specifications. Circuit validation is necessary for critical applications.
Q: What is the moisture sensitivity level for both TIP142 variants?
A: Both devices are rated MSL 1 (Unlimited), indicating no moisture sensitivity restrictions during storage or handling.
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