TIP132G Equivalent & Substitute Parts

Part Overview

The TIP132G is an NPN Darlington bipolar junction transistor manufactured by onsemi, rated for 100 V collector-emitter breakdown voltage and 8 A maximum collector current in a TO-220-3 through-hole package. This device is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement continuity. The TIP132G serves applications requiring moderate power switching and amplification with Darlington configuration for high current gain.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN - Darlington	—
Current - Collector (Ic) (Max)	8	A
Voltage - Collector Emitter Breakdown (Max)	100	V
Power - Max	2	W
DC Current Gain (hFE) (Min)	1000	—
Operating Temperature Range	-65 to 150	°C
Package / Case	TO-220-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution of the TIP132G is determined by matching the following critical electrical and mechanical parameters:

Electrical Matching Criteria:

Transistor Type: NPN - Darlington configuration
Maximum Collector Current (Ic): 8 A
Collector-Emitter Breakdown Voltage: 100 V
DC Current Gain (hFE): Minimum 1000 at specified operating point
Operating Temperature Range: Minimum -65°C to 150°C

Mechanical Matching Criteria:

Package / Case: TO-220-3
Mounting Type: Through Hole

Substitute parts are grouped into two categories based on these parameters:

Category 1 - Direct Electrical and Mechanical Equivalents: Parts that match all critical electrical parameters (8 A, 100 V, 1000 hFE minimum) and package specifications (TO-220-3, through-hole). These include TIP102G, TIP132 (STMicroelectronics), and TIP102 (STMicroelectronics).

Category 2 - Functional Equivalents with Parameter Variations: Parts that maintain the core 8 A / 100 V / NPN Darlington specification but differ in secondary parameters such as saturation voltage, cutoff current, or power rating. The BDX53C falls into this category with a significantly higher power rating (60 W versus 2 W) and different saturation characteristics.

Parameter Comparison

Parameter	TIP132G (onsemi)	TIP102G (onsemi)	TIP132 (STMicroelectronics)	TIP102 (STMicroelectronics)	BDX53C (onsemi)
Transistor Type	NPN - Darlington	NPN - Darlington	NPN - Darlington	NPN - Darlington	NPN - Darlington
Current - Collector (Ic) (Max)	8 A	8 A	8 A	8 A	8 A
Voltage - Collector Emitter Breakdown (Max)	100 V	100 V	100 V	100 V	100 V
Vce Saturation (Max) @ Ib, Ic	3V @ 30mA, 6A	2.5V @ 80mA, 8A	4V @ 30mA, 6A	2.5V @ 80mA, 8A	2V @ 12mA, 3A
Current - Collector Cutoff (Max)	500µA	50µA	500µA	50µA	500µA
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 4A, 4V	1000 @ 3A, 4V	1000 @ 4A, 4V	1000 @ 3A, 4V	750 @ 3A, 3V
Power - Max	2 W	2 W	2 W	2 W	60 W
Operating Temperature Range	-65 to 150°C	-65 to 150°C	-65 to 150°C	-65 to 150°C	Up to 150°C
Package / Case	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Product Status	Obsolete	Active	Active	Active	Obsolete
RoHS Status	Not specified	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	Not specified

Engineering Selection Recommendations

Primary Substitutes (Active Product Status):

TIP102G (onsemi) and TIP102 (STMicroelectronics) are the preferred substitutes for the obsolete TIP132G. Both devices are in active production status, meet all critical electrical parameters (8 A, 100 V, 1000 hFE minimum), and are packaged in TO-220-3 through-hole configuration. TIP102G and TIP102 feature improved collector cutoff current (50µA versus 500µA) and lower saturation voltage (2.5V @ 80mA, 8A), providing superior switching performance. Both are ROHS3 compliant, supporting modern environmental and regulatory requirements.

TIP132 (STMicroelectronics) is an active-status direct equivalent from an alternative manufacturer, maintaining identical electrical specifications to the original TIP132G. This part is ROHS3 compliant and suitable for direct replacement in existing designs.

Secondary Substitute (Obsolete Status, Higher Power Rating):

BDX53C (onsemi) is an obsolete substitute with identical 8 A / 100 V core specifications but offers a significantly higher power rating (60 W versus 2 W). This part is suitable only for applications requiring enhanced thermal performance or higher power dissipation. The BDX53C exhibits lower saturation voltage (2V @ 12mA, 3A) and reduced DC current gain (750 hFE minimum), which may affect circuit behavior in gain-dependent applications. Obsolete status limits long-term procurement viability.

Compliance Considerations:

For new designs and long-term production, select from active-status parts: TIP102G, TIP102, or TIP132 (STMicroelectronics). These devices carry ROHS3 compliance certification. The original TIP132G and BDX53C, both obsolete, should be replaced in active production lines.

Frequently Asked Questions (FAQ)

Q: Can TIP102G directly replace TIP132G in existing circuits?

A: Yes. TIP102G meets all critical electrical parameters: 8 A maximum collector current, 100 V breakdown voltage, 1000 hFE minimum gain, and TO-220-3 through-hole package. TIP102G features improved saturation voltage and lower cutoff current, which enhance switching performance. No circuit modifications are required for direct substitution.

Q: What is the difference between TIP102G and TIP102?

A: Both devices are electrically identical with matching 8 A / 100 V / 1000 hFE specifications and TO-220-3 packaging. The primary difference is manufacturer: TIP102G is manufactured by onsemi, while TIP102 is manufactured by STMicroelectronics. Both are active-status products with ROHS3 compliance. Selection between them depends on supplier availability and procurement preferences.

Q: Why is BDX53C listed as a substitute if it is obsolete?

A: BDX53C is included because it meets the core electrical requirements (8 A, 100 V, NPN Darlington) and TO-220-3 package specification. However, its obsolete status and significantly higher power rating (60 W) make it unsuitable for new designs. BDX53C is relevant only for legacy system maintenance where existing inventory exists.

Q: Does saturation voltage difference affect circuit performance?

A: Saturation voltage differences between substitutes (ranging from 2V to 4V at specified test conditions) affect switching losses and heat dissipation. TIP102G and TIP102 exhibit lower saturation voltage (2.5V), reducing power loss compared to TIP132G (3V) or TIP132 (4V). For applications sensitive to switching efficiency, lower saturation voltage is advantageous. Circuit simulation or testing is not required for functional compatibility, as all parts operate within standard Darlington switching parameters.

Q: Are all substitute parts ROHS3 compliant?

A: TIP102G, TIP102, and TIP132 (STMicroelectronics) are ROHS3 compliant. The original TIP132G (onsemi) and BDX53C (onsemi) do not specify RoHS status in available documentation. For applications requiring ROHS3 certification, select from the three active-status parts listed above.

Q: Can TIP132 (STMicroelectronics) be used interchangeably with TIP132G (onsemi)?

A: Yes. Both parts share identical part number designation and electrical specifications (8 A, 100 V, 1000 hFE, TO-220-3 package). The difference is manufacturer: TIP132G is onsemi, while TIP132 is STMicroelectronics. TIP132 is active-status and ROHS3 compliant, making it the preferred choice for new production.

Q: What is the significance of DC Current Gain (hFE) variation among substitutes?

A: All listed substitutes maintain a minimum DC current gain of 750 hFE or higher. TIP102G, TIP102, TIP132G, and TIP132 specify 1000 hFE minimum, while BDX53C specifies 750 hFE minimum. For Darlington transistors used in switching applications, this variation has minimal impact on circuit function. Gain-dependent analog amplifier circuits should verify performance with the specific hFE value of the selected part.

Q: Is through-hole TO-220-3 packaging available for all substitutes?

A: Yes. All listed substitutes are packaged in TO-220-3 through-hole configuration, ensuring mechanical and thermal compatibility with existing PCB layouts and heatsink mounting arrangements. No board redesign is required for substitution.

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