TIP132 Equivalent & Substitute Parts

Part Overview

The TIP132 is an NPN Darlington bipolar junction transistor manufactured by STMicroelectronics, designed for high-current switching and amplification applications. This through-hole component operates at 100 V collector-emitter breakdown voltage with a maximum collector current of 8 A and 2 W power dissipation. The device is classified as Active product status with full RoHS3 compliance and REACH unaffected designation. Substitute parts are identified to provide design flexibility, alternative sourcing options, and compatibility with existing circuit topologies where electrical and mechanical parameters align within acceptable tolerances.

Substiute Parts

TIP132
STMicroelectronicsIn Stock: 15400TIP132 Datasheet
TIP132
Current Part
2N6045G
onsemiIn Stock: 11812N6045G Datasheet
2N6045G
Similar
BDX53CG
onsemiIn Stock: 1788BDX53CG Datasheet
BDX53CG
Similar
TIP102G
onsemiIn Stock: 1412TIP102G Datasheet
TIP102G
Similar
TIP122G
onsemiIn Stock: 35189TIP122G Datasheet
TIP122G
Similar

Key Parameters

Parameter Value Unit
Transistor Type NPN - Darlington
Current - Collector (Ic) (Max) 8 A
Voltage - Collector Emitter Breakdown (Max) 100 V
Power - Max 2 W
DC Current Gain (hFE) (Min) 1000
Mounting Type Through Hole
Package / Case TO-220-3
Operating Temperature (Max) 150 °C
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution eligibility for the TIP132 is determined by strict alignment of the following electrical and mechanical parameters:

Primary Substitution Criteria:

  • Transistor Type: NPN - Darlington configuration
  • Voltage - Collector Emitter Breakdown: 100 V (maximum rating)
  • Current - Collector (Ic) (Max): 8 A or greater
  • Package / Case: TO-220-3 form factor
  • Mounting Type: Through Hole
  • RoHS Status: ROHS3 Compliant

Secondary Compatibility Factors:

  • DC Current Gain (hFE) (Min): 1000 or greater
  • Operating Temperature Range: Support for 150°C junction temperature minimum
  • REACH Status: REACH Unaffected designation

Parts meeting all primary criteria are classified as direct substitutes. Parts meeting primary criteria with variations in secondary factors are classified as functional equivalents with application-specific considerations.

Parameter Comparison

Parameter TIP132 (STMicroelectronics) 2N6045G (onsemi) BDX53CG (onsemi) TIP102G (onsemi) TIP122G (onsemi)
Transistor Type NPN - Darlington NPN - Darlington NPN - Darlington NPN - Darlington NPN - Darlington
Current - Collector (Ic) (Max) 8 A 8 A 8 A 8 A 5 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V 100 V 100 V 100 V
Power - Max 2 W 75 W 65 W 2 W 2 W
DC Current Gain (hFE) (Min) 1000 @ 4A, 4V 1000 @ 3A, 4V 750 @ 3A, 3V 1000 @ 3A, 4V 1000 @ 3A, 3V
Vce Saturation (Max) 4V @ 30mA, 6A 2V @ 12mA, 3A 2V @ 12mA, 3A 2.5V @ 80mA, 8A 4V @ 20mA, 5A
Current - Collector Cutoff (Max) 500µA 20µA 500µA 50µA 500µA
Operating Temperature (Max) 150°C 150°C 150°C 150°C 150°C
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
REACH Status REACH Unaffected REACH Unaffected REACH Unaffected REACH Unaffected REACH Unaffected

Engineering Selection Recommendations

Direct Substitutes (Full Compatibility):

2N6045G (onsemi) and BDX53CG (onsemi) are direct substitutes for the TIP132. Both devices meet all primary substitution criteria with 8 A maximum collector current, 100 V breakdown voltage, and TO-220-3 packaging. Both are ROHS3 compliant and REACH unaffected. The 2N6045G and BDX53CG offer enhanced power dissipation ratings (75 W and 65 W respectively) compared to the TIP132 (2 W), providing thermal margin in applications requiring sustained current delivery. Both support the full 150°C operating temperature range.

TIP102G (onsemi) is a direct substitute for the TIP132. This device matches all primary criteria with 8 A maximum collector current, 100 V breakdown voltage, and TO-220-3 packaging. The TIP102G maintains the 2 W power rating identical to the TIP132 and is ROHS3 compliant and REACH unaffected. Operating temperature range extends to 150°C.

Functional Equivalent (Current Rating Limitation):

TIP122G (onsemi) is a functional equivalent with a current limitation. This device operates at 100 V breakdown voltage with TO-220-3 packaging and is ROHS3 compliant and REACH unaffected. The TIP122G maximum collector current is rated at 5 A, which is below the TIP132 specification of 8 A. The TIP122G is suitable for applications where collector current does not exceed 5 A. The 2 W power rating and 1000 minimum DC current gain align with TIP132 specifications.

All substitute parts maintain Active product status and are available in production quantities.

Frequently Asked Questions (FAQ)

Q: Can the 2N6045G replace the TIP132 in all applications?

A: The 2N6045G meets all primary electrical and mechanical substitution criteria for the TIP132. Both devices operate at 100 V breakdown voltage with 8 A maximum collector current in TO-220-3 packaging. The 2N6045G provides higher power dissipation (75 W versus 2 W), which is advantageous in thermal-constrained designs. Substitution is valid across all applications where the TIP132 is specified.

Q: What is the difference between the BDX53CG and the 2N6045G?

A: Both the BDX53CG and 2N6045G are direct substitutes for the TIP132 with identical electrical ratings (100 V, 8 A, TO-220-3). The BDX53CG is rated at 65 W power dissipation, while the 2N6045G is rated at 75 W. The BDX53CG has a minimum DC current gain of 750 at 3 A and 3 V, compared to 1000 for the 2N6045G. Both devices are ROHS3 compliant and REACH unaffected.

Q: Why is the TIP122G listed as a functional equivalent rather than a direct substitute?

A: The TIP122G has a maximum collector current rating of 5 A, which is below the TIP132 specification of 8 A. While the TIP122G meets all other primary criteria (100 V breakdown voltage, TO-220-3 packaging, ROHS3 compliance), applications requiring collector currents between 5 A and 8 A cannot use the TIP122G. The TIP122G is suitable only for designs where collector current remains at or below 5 A.

Q: Are all substitute parts available in the same packaging?

A: All substitute parts listed (2N6045G, BDX53CG, TIP102G, TIP122G) use TO-220-3 through-hole packaging identical to the TIP132. No package conversion or adapter components are required for mechanical compatibility.

Q: Do the substitute parts have the same thermal characteristics as the TIP132?

A: The 2N6045G and BDX53CG have higher power dissipation ratings (75 W and 65 W respectively) compared to the TIP132 (2 W). The TIP102G and TIP122G maintain the 2 W rating. Higher power ratings indicate improved thermal performance under sustained current conditions. All devices support 150°C maximum junction temperature operation.

Q: Are all substitute parts RoHS3 compliant?

A: All substitute parts listed (2N6045G, BDX53CG, TIP102G, TIP122G) are ROHS3 compliant and REACH unaffected, matching the TIP132 environmental compliance status.

Q: What is the DC current gain difference between the TIP132 and substitute parts?

A: The TIP132 specifies a minimum DC current gain (hFE) of 1000 at 4 A and 4 V. The 2N6045G and TIP102G maintain 1000 minimum hFE at 3 A and 4 V. The BDX53CG has a minimum hFE of 750 at 3 A and 3 V. The TIP122G specifies 1000 minimum hFE at 3 A and 3 V. All devices meet or exceed the 1000 minimum gain requirement except the BDX53CG, which is rated at 750.

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