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TIP131G Equivalent & Substitute Parts
Part Overview
The TIP131G is an NPN Darlington bipolar junction transistor manufactured by onsemi, rated for 80 V collector-emitter breakdown voltage and 8 A maximum collector current in a TO-220-3 through-hole package. This device is classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support and procurement continuity. The TIP131G delivers 2 W maximum power dissipation and operates across a temperature range of -65°C to 150°C junction temperature.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | NPN - Darlington | — |
| Current - Collector (Ic) (Max) | 8 | A |
| Voltage - Collector Emitter Breakdown (Max) | 80 | V |
| Vce Saturation (Max) | 3 V @ 30 mA, 6 A | — |
| Current - Collector Cutoff (Max) | 500 | µA |
| DC Current Gain (hFE) (Min) | 1000 @ 4 A, 4 V | — |
| Power - Max | 2 | W |
| Operating Temperature | -65 to 150 | °C (TJ) |
| Mounting Type | Through Hole | — |
| Package / Case | TO-220-3 | — |
Substitute Part Grouping Explanation
Substitution of the TIP131G is determined by electrical and mechanical parameter alignment within the NPN Darlington transistor category. The critical parameters governing substitution are:
- Transistor Type: NPN - Darlington configuration
- Current Rating: 8 A maximum collector current
- Voltage Rating: 80 V maximum collector-emitter breakdown voltage
- Package: TO-220-3 through-hole form factor
- Mounting: Through-hole technology compatibility
The BDX53B from STMicroelectronics meets these core electrical and mechanical requirements. Both devices share identical maximum collector current (8 A), collector-emitter breakdown voltage (80 V), collector cutoff current (500 µA), and package configuration (TO-220-3). These parameters establish functional equivalence for circuit-level substitution.
Parameter Comparison
| Parameter | TIP131G (onsemi) | BDX53B (STMicroelectronics) | Unit |
|---|---|---|---|
| Transistor Type | NPN - Darlington | NPN - Darlington | — |
| Current - Collector (Ic) (Max) | 8 | 8 | A |
| Voltage - Collector Emitter Breakdown (Max) | 80 | 80 | V |
| Current - Collector Cutoff (Max) | 500 | 500 | µA |
| Operating Temperature (Max) | 150 | 150 | °C (TJ) |
| Mounting Type | Through Hole | Through Hole | — |
| Package / Case | TO-220-3 | TO-220-3 | — |
| Vce Saturation (Max) | 3 V @ 30 mA, 6 A | 2 V @ 12 mA, 3 A | — |
| DC Current Gain (hFE) (Min) | 1000 @ 4 A, 4 V | 750 @ 3 A, 3 V | — |
| Power - Max | 2 | 60 | W |
| Product Status | Obsolete | Active | — |
Engineering Selection Recommendations
The BDX53B is a direct functional substitute for the TIP131G based on matching electrical ratings and package configuration. The BDX53B offers the following advantages:
- Product Status: Active manufacturing status ensures long-term availability and supply chain continuity, contrasting with the obsolete status of the TIP131G.
- Compliance: The BDX53B carries RoHS3 compliance certification, meeting current environmental and regulatory standards.
- Power Dissipation: The BDX53B supports 60 W maximum power dissipation compared to 2 W for the TIP131G, providing enhanced thermal capability for applications requiring higher power handling.
- Regulatory Alignment: Both devices maintain REACH Unaffected status and EAR99 ECCN classification.
Selection of the BDX53B is appropriate for new designs and replacement applications where the TIP131G is no longer procurable. The higher power rating of the BDX53B does not compromise compatibility in circuits designed for the TIP131G's 2 W specification.
Frequently Asked Questions (FAQ)
Q: Can the BDX53B directly replace the TIP131G in existing circuits?
A: Yes. Both devices share identical maximum collector current (8 A), collector-emitter breakdown voltage (80 V), and TO-220-3 package configuration. The electrical ratings and pinout are compatible for direct substitution.
Q: What is the significance of the different power ratings (2 W vs. 60 W)?
A: The BDX53B's higher power rating (60 W) indicates superior thermal performance and heat dissipation capability. This does not create incompatibility; circuits designed for the TIP131G's 2 W rating operate within the BDX53B's specifications.
Q: Are there differences in saturation voltage between these devices?
A: Yes. The TIP131G specifies 3 V saturation voltage at 30 mA base current and 6 A collector current, while the BDX53B specifies 2 V at 12 mA base current and 3 A collector current. These measurements are taken at different operating points and do not prevent substitution in standard applications.
Q: How do the DC current gain specifications compare?
A: The TIP131G specifies minimum hFE of 1000 at 4 A collector current and 4 V collector-emitter voltage. The BDX53B specifies minimum hFE of 750 at 3 A collector current and 3 V collector-emitter voltage. Both values indicate high current gain typical of Darlington transistors and support equivalent circuit performance.
Q: Is the TO-220-3 package identical between both devices?
A: Yes. Both the TIP131G and BDX53B use the TO-220-3 through-hole package with identical pinout and mechanical dimensions, enabling direct board-level substitution without layout modification.
Q: Why is the BDX53B recommended over the TIP131G?
A: The BDX53B is actively manufactured by STMicroelectronics, whereas the TIP131G is obsolete. Active production status ensures reliable procurement, consistent quality, and long-term supply availability for both new designs and field replacements.
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