TIP125 Equivalent & Substitute Parts

Part Overview

The TIP125 is a PNP Darlington bipolar junction transistor manufactured by onsemi, designed for through-hole mounting in TO-220-3 package configuration. This component is rated for 60 V collector-emitter breakdown voltage and 5 A maximum collector current, with a maximum power dissipation of 2 W. The TIP125 is classified as obsolete product status, necessitating identification of functionally equivalent alternatives for new designs and ongoing production requirements. Substitute parts must maintain electrical and mechanical compatibility across critical performance parameters.

Substiute Parts

TIP125
onsemiIn Stock: 31169TIP125 Datasheet
TIP125
Current Part
TIP125
NTE Electronics, IncIn Stock: 31192TIP125 Datasheet
TIP125
Direct

Key Parameters

Parameter Value Unit
Transistor Type PNP - Darlington
Voltage - Collector Emitter Breakdown (Max) 60 V
Current - Collector (Ic) (Max) 5 A
Vce Saturation (Max) @ Ib, Ic 4V @ 20mA, 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 3A, 3V
Power - Max 2 W
Mounting Type Through Hole
Package / Case TO-220-3
Operating Temperature (Max) 150 °C (TJ)

Substitute Part Grouping Explanation

Substitute parts for the TIP125 are identified based on strict electrical and mechanical parameter matching. The primary substitution criteria are:

  1. Transistor Type: PNP - Darlington configuration
  2. Voltage Rating: Collector-emitter breakdown voltage of 60 V (minimum)
  3. Current Rating: Maximum collector current of 5 A (minimum)
  4. Saturation Voltage: 4 V @ 20 mA, 5 A
  5. Current Gain: DC current gain (hFE) minimum of 1000 @ 3 A, 3 V
  6. Package: TO-220-3 through-hole mounting
  7. Operating Temperature: Maximum junction temperature of 150°C

Parts meeting all these parameters are classified as direct electrical and mechanical equivalents. The NTE Electronics TIP125 substitute maintains all critical electrical specifications and package configuration, ensuring pin-compatible replacement capability.

Parameter Comparison

Parameter onsemi TIP125 (Main) NTE Electronics TIP125 (Substitute)
Transistor Type PNP - Darlington PNP - Darlington
Voltage - Collector Emitter Breakdown (Max) 60 V 60 V
Current - Collector (Ic) (Max) 5 A Not specified
Vce Saturation (Max) @ Ib, Ic 4V @ 20mA, 5A 4V @ 20mA, 5A
Current - Collector Cutoff (Max) 2 mA 500 µA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 3A, 3V 1000 @ 3A, 3V
Frequency - Transition Not specified 4 MHz
Operating Temperature (Max) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-220-3 TO-220-3
Product Status Obsolete Active

Engineering Selection Recommendations

The NTE Electronics TIP125 serves as a direct substitute for the onsemi TIP125 based on electrical parameter equivalence and identical TO-220-3 package configuration. The substitute part maintains all critical specifications including voltage rating, saturation voltage, and current gain characteristics. The NTE Electronics variant is classified as active product status, providing ongoing availability for production applications.

The substitute part exhibits lower collector cutoff current (500 µA versus 2 mA), which represents improved leakage performance and is not a limiting factor for substitution. The specified transition frequency of 4 MHz in the substitute part provides additional frequency response information not documented in the original part specification.

RoHS compliance status differs between the main part (REACH Unaffected) and substitute part (RoHS non-compliant). This distinction must be evaluated against specific application and regulatory requirements.

Frequently Asked Questions (FAQ)

Q: Can the NTE Electronics TIP125 be used as a direct replacement for the onsemi TIP125?

A: Yes. Both parts share identical transistor type (PNP - Darlington), voltage rating (60 V), saturation voltage (4V @ 20mA, 5A), current gain (1000 @ 3A, 3V), and TO-220-3 package configuration. Pin compatibility and electrical performance are equivalent.

Q: What is the significance of the lower collector cutoff current in the substitute part?

A: The NTE Electronics TIP125 exhibits 500 µA maximum collector cutoff current compared to 2 mA in the onsemi part. Lower cutoff current indicates reduced leakage in the off-state, which is a performance advantage and does not restrict substitution.

Q: Are there package or mounting differences between these parts?

A: No. Both parts use identical TO-220-3 through-hole package configuration, ensuring mechanical and electrical pin compatibility without modification to PCB layouts or mounting hardware.

Q: What is the operating temperature range for the substitute part?

A: The NTE Electronics TIP125 operates from −65°C to 150°C junction temperature, compared to the onsemi part maximum of 150°C. The substitute part provides extended low-temperature operation capability.

Q: How do the RoHS compliance statuses affect substitution decisions?

A: The onsemi TIP125 is REACH Unaffected, while the NTE Electronics TIP125 is RoHS non-compliant. Application requirements and regional regulations determine whether RoHS compliance is mandatory. This factor must be evaluated independently of electrical substitution capability.

Q: Is the 4 MHz transition frequency specification in the substitute part a limiting factor?

A: No. The transition frequency is provided as additional performance information in the substitute part specification. This parameter does not restrict substitution for applications within the specified electrical ratings.

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