TIP122 NPN Darlington Transistor Equivalent & Substitute Parts

Part Overview

The TIP122 is an NPN Darlington bipolar junction transistor manufactured by STMicroelectronics, rated for 100 V collector-emitter breakdown voltage and 5 A maximum collector current. The device is packaged in a TO-220-3 through-hole configuration and is classified as Active product status with ROHS3 compliance. Substitute parts are identified when equivalent electrical performance and mechanical compatibility are required due to inventory availability, supply chain considerations, or design flexibility within specified parameter ranges.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN - Darlington	—
Voltage - Collector Emitter Breakdown (Max)	100	V
Current - Collector (Ic) (Max)	5	A
Power - Max	2	W
Vce Saturation (Max) @ Ib, Ic	4V @ 20mA, 5A	—
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 3A, 3V	—
Package / Case	TO-220-3	—
Mounting Type	Through Hole	—
Operating Temperature (Max)	150	°C
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitute parts for the TIP122 are classified into two categories based on electrical parameter alignment:

Direct Equivalent (Identical Electrical Specifications): The TIP122G from onsemi maintains all critical electrical parameters of the original TIP122: 100 V breakdown voltage, 5 A maximum collector current, 2 W power rating, 4 V saturation voltage at specified conditions, and 1000 minimum DC current gain. This part is a direct functional replacement with identical TO-220-3 packaging.

Similar Substitutes (Enhanced or Reduced Current Ratings): Parts including 2N6045G, BDX53CG, TIP102G, and TIP112G share the 100 V breakdown voltage and TO-220-3 package but differ in maximum collector current and power dissipation ratings. These parts are suitable for applications where the specified current or power requirements differ from the TIP122 baseline:

2N6045G and BDX53CG: Rated for 8 A maximum collector current with higher power dissipation (75 W and 65 W respectively), suitable for higher-current applications.
TIP102G: Rated for 8 A maximum collector current with 2 W power rating, providing intermediate current capability.
TIP112G: Rated for 2 A maximum collector current with 2 W power rating, suitable for lower-current applications.

All substitute parts maintain NPN Darlington configuration, TO-220-3 through-hole packaging, 100 V breakdown voltage rating, ROHS3 compliance, and Active product status.

Parameter Comparison

Part Number	Manufacturer	Ic (Max) [A]	Vce Breakdown (Max) [V]	Power (Max) [W]	Vce Sat (Max) [V]	hFE (Min)	Package	Operating Temp (Max) [°C]	RoHS Status
TIP122	STMicroelectronics	5	100	2	4 @ 20mA, 5A	1000 @ 3A, 3V	TO-220-3	150	ROHS3
TIP122G	onsemi	5	100	2	4 @ 20mA, 5A	1000 @ 3A, 3V	TO-220-3	150	ROHS3
2N6045G	onsemi	8	100	75	2 @ 12mA, 3A	1000 @ 3A, 4V	TO-220-3	150	ROHS3
BDX53CG	onsemi	8	100	65	2 @ 12mA, 3A	750 @ 3A, 3V	TO-220-3	150	ROHS3
TIP102G	onsemi	8	100	2	2.5 @ 80mA, 8A	1000 @ 3A, 4V	TO-220-3	150	ROHS3
TIP112G	onsemi	2	100	2	2.5 @ 8mA, 2A	1000 @ 1A, 4V	TO-220-3	150	ROHS3

Engineering Selection Recommendations

TIP122G (onsemi): Select this part for direct replacement of TIP122 when identical electrical specifications and performance are required. The TIP122G maintains all critical parameters including 5 A maximum collector current, 2 W power rating, and 4 V saturation voltage at specified bias conditions. Both parts are ROHS3 compliant and rated to 150°C maximum junction temperature.

2N6045G and BDX53CG (onsemi): These parts are suitable for applications requiring higher collector current capability (8 A) and increased power dissipation. The 2N6045G provides 75 W power rating while BDX53CG provides 65 W. Both maintain 100 V breakdown voltage and TO-220-3 packaging. Selection between these two depends on power dissipation requirements and DC current gain specifications (2N6045G: 1000 minimum at 3A/4V; BDX53CG: 750 minimum at 3A/3V).

TIP102G (onsemi): This part offers 8 A maximum collector current while maintaining the 2 W power rating of the original TIP122. It is suitable for applications where current capability must exceed 5 A but power dissipation remains limited to 2 W. The saturation voltage is lower (2.5 V at 80mA/8A) compared to TIP122.

TIP112G (onsemi): This part is suitable for applications requiring reduced collector current (2 A maximum) while maintaining the 2 W power rating and 100 V breakdown voltage. It is appropriate for lower-current circuit implementations within the same package footprint.

All substitute parts are Active product status, ROHS3 compliant, and packaged in TO-220-3 through-hole configuration, ensuring mechanical and regulatory compatibility with TIP122 applications.

Frequently Asked Questions (FAQ)

Q: Can TIP122G be used as a direct replacement for TIP122?

A: Yes. The TIP122G from onsemi is a direct equivalent with identical electrical specifications: 5 A maximum collector current, 100 V breakdown voltage, 2 W power rating, 4 V saturation voltage at 20mA/5A, and 1000 minimum DC current gain at 3A/3V. Both parts use TO-220-3 through-hole packaging and are ROHS3 compliant.

Q: What is the difference between TIP122 and 2N6045G?

A: The primary differences are maximum collector current and power dissipation. TIP122 is rated for 5 A and 2 W, while 2N6045G is rated for 8 A and 75 W. The 2N6045G has lower saturation voltage (2 V at 12mA/3A versus 4 V at 20mA/5A). Both maintain 100 V breakdown voltage and TO-220-3 packaging. The 2N6045G is suitable for higher-current applications.

Q: Can TIP112G replace TIP122 in all applications?

A: No. TIP112G has a maximum collector current rating of 2 A, which is lower than TIP122's 5 A rating. It is suitable only for applications where the required collector current does not exceed 2 A. Both parts maintain 100 V breakdown voltage and 2 W power rating in TO-220-3 packaging.

Q: Are all substitute parts compatible with the same PCB footprint as TIP122?

A: Yes. All substitute parts listed (TIP122G, 2N6045G, BDX53CG, TIP102G, TIP112G) use TO-220-3 through-hole packaging, which provides identical mechanical compatibility and PCB footprint with TIP122.

Q: What is the significance of DC current gain (hFE) differences among substitute parts?

A: DC current gain determines the base current required to achieve a specified collector current. TIP122, TIP122G, 2N6045G, TIP102G, and TIP112G all specify minimum hFE of 1000 at their respective test conditions, ensuring adequate current amplification. BDX53CG specifies 750 minimum hFE, which is lower but still sufficient for Darlington configuration applications. Higher hFE values require less base current for the same collector current.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All substitute parts listed (TIP122G, 2N6045G, BDX53CG, TIP102G, TIP112G) are ROHS3 compliant, matching the compliance status of the original TIP122.

Q: What is the operating temperature range for substitute parts?

A: TIP122G, 2N6045G, BDX53CG, TIP102G, and TIP112G all specify operating temperature range of -65°C to 150°C junction temperature, with maximum junction temperature of 150°C. The original TIP122 specifies maximum operating temperature of 150°C.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message