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TIP122 NPN Darlington Transistor Equivalent & Substitute Parts
Part Overview
The TIP122 is an NPN Darlington bipolar junction transistor rated for 100 V collector-emitter breakdown voltage and 5 A maximum collector current in a TO-220-3 through-hole package. The original onsemi TIP122 carries an obsolete product status, necessitating identification of active equivalent and substitute components for new designs and production applications. Direct equivalents and higher-rated alternatives are available from multiple manufacturers with improved compliance certifications and active product status.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | NPN - Darlington | — |
| Voltage - Collector Emitter Breakdown (Max) | 100 | V |
| Current - Collector (Ic) (Max) | 5 | A |
| Power - Max | 2 | W |
| Vce Saturation (Max) @ Ib, Ic | 4V @ 20mA, 5A | — |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 3A, 3V | — |
| Operating Temperature | -65 to 150 | °C (TJ) |
| Package / Case | TO-220-3 | — |
| Mounting Type | Through Hole | — |
Substitute Part Grouping Explanation
Substitution of the TIP122 is determined by the following critical parameters: collector-emitter breakdown voltage (100 V minimum), maximum collector current rating (5 A minimum for direct equivalents), package type (TO-220-3 through-hole), and transistor topology (NPN Darlington configuration). Parts are grouped into two categories:
Direct Equivalents maintain identical electrical specifications (5 A, 100 V, 2 W) with improved product status and compliance certifications. These parts are pin-compatible and functionally interchangeable without circuit modification.
Higher-Rated Alternatives exceed the TIP122 specifications in collector current (8 A) and power dissipation (60–75 W) while maintaining the 100 V breakdown voltage and TO-220-3 package. These parts are suitable for applications requiring additional current margin or thermal headroom, provided circuit design accommodates the different saturation voltage characteristics.
Parameter Comparison
| Part Number | Manufacturer | Product Status | Ic (Max) [A] | Vce Breakdown [V] | Power [W] | Vce Sat @ Ib, Ic | hFE (Min) @ Ic, Vce | Package | RoHS Status |
|---|---|---|---|---|---|---|---|---|---|
| TIP122 | onsemi | Obsolete | 5 | 100 | 2 | 4V @ 20mA, 5A | 1000 @ 3A, 3V | TO-220-3 | Non-compliant |
| TIP122G | onsemi | Active | 5 | 100 | 2 | 4V @ 20mA, 5A | 1000 @ 3A, 3V | TO-220-3 | ROHS3 Compliant |
| TIP122 | STMicroelectronics | Active | 5 | 100 | 2 | 4V @ 20mA, 5A | 1000 @ 3A, 3V | TO-220-3 | ROHS3 Compliant |
| KSD560YTU | onsemi | Active | 5 | 100 | 1.5 | 1.5V @ 3mA, 3A | 5000 @ 3A, 2V | TO-220-3 | ROHS3 Compliant |
| KSD560RTSTU | onsemi | Last Time Buy | 5 | 100 | 1.5 | 1.5V @ 3mA, 3A | 2000 @ 3A, 2V | TO-220-3 | ROHS3 Compliant |
| BDX53C | onsemi | Obsolete | 8 | 100 | 60 | 2V @ 12mA, 3A | 750 @ 3A, 3V | TO-220-3 | Non-compliant |
| BDX53CG | onsemi | Active | 8 | 100 | 65 | 2V @ 12mA, 3A | 750 @ 3A, 3V | TO-220-3 | ROHS3 Compliant |
| 2N6045G | onsemi | Active | 8 | 100 | 75 | 2V @ 12mA, 3A | 1000 @ 3A, 4V | TO-220-3 | ROHS3 Compliant |
| TIP102 | STMicroelectronics | Active | 8 | 100 | 2 | 2.5V @ 80mA, 8A | 1000 @ 3A, 4V | TO-220-3 | ROHS3 Compliant |
| TIP102G | onsemi | Active | 8 | 100 | 2 | 2.5V @ 80mA, 8A | 1000 @ 3A, 4V | TO-220-3 | ROHS3 Compliant |
| TIP132 | STMicroelectronics | Active | 8 | 100 | 2 | 4V @ 30mA, 6A | 1000 @ 4A, 4V | TO-220-3 | ROHS3 Compliant |
Engineering Selection Recommendations
For Direct Replacement (Pin-Compatible, Identical Specifications):
TIP122G (onsemi) and TIP122 (STMicroelectronics) are direct functional equivalents to the obsolete onsemi TIP122. Both maintain 5 A collector current, 100 V breakdown voltage, and 2 W power rating. Both carry ROHS3 compliance certification and active product status. TIP122G is supplied in tube packaging; STMicroelectronics TIP122 is supplied in tube packaging with unlimited moisture sensitivity level. Selection between these two depends on supply chain availability and preferred manufacturer qualification.
For Applications Requiring Higher Current Capacity:
BDX53CG (onsemi) and 2N6045G (onsemi) provide 8 A collector current with 100 V breakdown voltage. BDX53CG delivers 65 W power dissipation; 2N6045G delivers 75 W. Both are ROHS3 compliant and active. These parts are suitable for circuits where the TIP122's 5 A rating creates insufficient margin or where thermal design benefits from higher power capability. Saturation voltage is lower (2 V @ 12mA, 3A) compared to the TIP122 (4 V @ 20mA, 5A), resulting in reduced power dissipation in saturated switching applications.
For Applications with Reduced Power Dissipation Requirements:
KSD560YTU (onsemi) maintains 5 A collector current and 100 V breakdown voltage with reduced power rating (1.5 W) and significantly lower saturation voltage (1.5 V @ 3mA, 3A). This part exhibits higher DC current gain (5000 @ 3A, 2V) and lower collector cutoff current (1 µA ICBO). KSD560YTU is active and ROHS3 compliant. This part is suitable for low-power switching applications where thermal dissipation is constrained.
For Higher Current Switching Applications:
TIP102 (STMicroelectronics) and TIP102G (onsemi) provide 8 A collector current with 100 V breakdown voltage and 2 W power rating. Saturation voltage is 2.5 V @ 80mA, 8A. Both are ROHS3 compliant and active. These parts are suitable for applications requiring 8 A switching capability with moderate power dissipation.
For Applications Requiring Maximum Current Margin:
TIP132 (STMicroelectronics) provides 8 A collector current, 100 V breakdown voltage, and 2 W power rating. Saturation voltage is 4 V @ 30mA, 6A. ROHS3 compliant and active. This part is suitable for high-current switching applications where the TIP122's 5 A rating is insufficient.
All recommended substitutes maintain TO-220-3 through-hole package compatibility and NPN Darlington topology. Circuit validation is required when saturation voltage differs significantly from the original design specification.
Frequently Asked Questions (FAQ)
Q: Can TIP122G be used as a direct replacement for the obsolete onsemi TIP122?
A: Yes. TIP122G maintains identical electrical specifications: 5 A collector current, 100 V breakdown voltage, 2 W power rating, and TO-220-3 package. Pin configuration is identical. TIP122G carries ROHS3 compliance and active product status. No circuit modification is required.
Q: What is the difference between TIP122G (onsemi) and TIP122 (STMicroelectronics)?
A: Both parts are electrically identical with 5 A, 100 V, 2 W specifications and TO-220-3 packaging. Both are ROHS3 compliant and active. The primary difference is manufacturer. Selection depends on supply chain availability and existing manufacturer qualification requirements.
Q: When should BDX53CG or 2N6045G be selected instead of TIP122G?
A: BDX53CG and 2N6045G are selected when the application requires 8 A collector current capacity or when higher power dissipation capability (65–75 W) is beneficial for thermal design. These parts have lower saturation voltage (2 V vs. 4 V), reducing power loss in saturated switching. Circuit design must accommodate the different saturation characteristics.
Q: Is KSD560YTU suitable for all TIP122 applications?
A: KSD560YTU maintains 5 A collector current and 100 V breakdown voltage but has reduced power rating (1.5 W vs. 2 W) and significantly lower saturation voltage (1.5 V vs. 4 V). This part is suitable for applications where power dissipation is constrained and where the lower saturation voltage does not create circuit compatibility issues. Applications with high base current requirements may not be compatible due to different saturation characteristics.
Q: What is the significance of DC current gain (hFE) differences between substitute parts?
A: DC current gain determines the base current required to achieve a specified collector current. Higher hFE (e.g., KSD560YTU at 5000 @ 3A, 2V) requires less base current for the same collector current, reducing base drive power. Lower hFE (e.g., BDX53CG at 750 @ 3A, 3V) requires higher base current. Circuit design must ensure adequate base drive current for the selected part.
Q: Are all substitute parts ROHS3 compliant?
A: All recommended active substitute parts (TIP122G, TIP122 STMicroelectronics, KSD560YTU, KSD560RTSTU, BDX53CG, 2N6045G, TIP102, TIP102G, TIP132) carry ROHS3 compliance certification. The original onsemi TIP122 is RoHS non-compliant. Obsolete parts (BDX53C) are non-compliant.
Q: Can TIP102 or TIP132 be used in place of TIP122?
A: TIP102 and TIP132 provide 8 A collector current with 100 V breakdown voltage and are pin-compatible in TO-220-3 packages. Both are ROHS3 compliant and active. These parts are suitable for applications where 8 A capacity is required or where additional current margin is beneficial. Saturation voltage characteristics differ (TIP102: 2.5 V @ 80mA, 8A; TIP132: 4 V @ 30mA, 6A), requiring circuit validation.
Q: What is the difference between tube and non-specified packaging?
A: Tube packaging indicates the parts are supplied in plastic tubes for automated handling and placement. Non-specified packaging in obsolete parts indicates legacy supply format. For new production, tube-packaged parts (TIP122G, KSD560YTU, etc.) are standard and recommended.
Q: Is the operating temperature range identical across all substitute parts?
A: Most active substitute parts specify -65°C to 150°C (TJ) operating temperature. KSD560YTU and KSD560RTSTU specify 150°C (TJ) maximum without lower temperature specification. For applications requiring full -65°C to 150°C range, verify the specific part datasheet. All parts are suitable for standard industrial temperature ranges (0°C to 70°C ambient).
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