TIP120 NPN Darlington Transistor Equivalent & Substitute Parts

Part Overview

The TIP120 is an NPN Darlington bipolar junction transistor manufactured by STMicroelectronics, designed for general-purpose switching and amplification applications. This through-hole component operates at 60 V maximum collector-emitter breakdown voltage with a maximum collector current of 5 A and 2 W power dissipation capability. The device is classified as Active product status and is RoHS3 compliant. Substitute parts are identified when equivalent electrical and mechanical specifications are required due to inventory constraints, manufacturing discontinuation, or design flexibility across multiple qualified suppliers.

Substiute Parts

TIP120
STMicroelectronicsIn Stock: 30228TIP120 Datasheet
TIP120
Current Part
TIP120G
onsemiIn Stock: 1414TIP120G Datasheet
TIP120G
Direct
TIP120TU
Fairchild SemiconductorIn Stock: 3898TIP120TU Datasheet
TIP120TU
Direct

Key Parameters

Parameter Value Unit
Transistor Type NPN - Darlington
Current - Collector (Ic) (Max) 5 A
Voltage - Collector Emitter Breakdown (Max) 60 V
Vce Saturation (Max) @ Ib, Ic 4 V @ 20 mA, 5 A
Current - Collector Cutoff (Max) 500 µA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 3 A, 3 V
Power - Max 2 W
Mounting Type Through Hole
Package / Case TO-220-3
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitute parts for the TIP120 are qualified based on strict electrical and mechanical parameter equivalence. The substitution criteria are defined by the following key parameters:

Electrical Specifications:

  • Transistor Type: NPN - Darlington configuration
  • Maximum Collector Current (Ic): 5 A
  • Maximum Collector-Emitter Breakdown Voltage (Vce): 60 V
  • Vce Saturation: 4 V @ 20 mA, 5 A
  • Maximum Collector Cutoff Current: 500 µA
  • DC Current Gain (hFE): Minimum 1000 @ 3 A, 3 V
  • Maximum Power Dissipation: 2 W

Mechanical Specifications:

  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220

Compliance Requirements:

  • RoHS3 Compliance
  • REACH Unaffected Status
  • ECCN: EAR99
  • HTSUS: 8541.29.0095

All substitute parts listed maintain identical electrical performance within the specified operating parameters and are housed in the same TO-220-3 package configuration, ensuring direct mechanical and electrical interchangeability in circuit applications.

Parameter Comparison

Parameter TIP120 (STMicroelectronics) TIP120G (onsemi) TIP120TU (Fairchild Semiconductor)
Manufacturer STMicroelectronics onsemi Fairchild Semiconductor
Transistor Type NPN - Darlington NPN - Darlington NPN - Darlington
Current - Collector (Ic) (Max) 5 A 5 A 5 A
Voltage - Collector Emitter Breakdown (Max) 60 V 60 V 60 V
Vce Saturation (Max) @ Ib, Ic 4 V @ 20 mA, 5 A 4 V @ 20 mA, 5 A 4 V @ 20 mA, 5 A
Current - Collector Cutoff (Max) 500 µA 500 µA 500 µA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 3 A, 3 V 1000 @ 3 A, 3 V 1000 @ 3 A, 3 V
Power - Max 2 W 2 W 2 W
Operating Temperature (TJ) 150°C −65°C ~ 150°C 150°C
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3
Supplier Device Package TO-220 TO-220 TO-220-3
RoHS Status ROHS3 Compliant ROHS3 Compliant Not Specified
REACH Status REACH Unaffected REACH Unaffected Not Specified
ECCN EAR99 EAR99 EAR99
HTSUS 8541.29.0095 8541.29.0095 8541.29.0095
Product Status Active Active Active

Engineering Selection Recommendations

TIP120 (STMicroelectronics): Primary selection for applications requiring RoHS3 compliance with unlimited moisture sensitivity rating (MSL 1). Suitable for standard industrial and consumer applications with operating temperature ceiling of 150°C.

TIP120G (onsemi): Direct electrical equivalent with extended operating temperature range (−65°C to 150°C), providing enhanced performance in temperature-extreme environments. RoHS3 compliant. Recommended for applications requiring low-temperature operation or wider thermal operating margins.

TIP120TU (Fairchild Semiconductor): Functionally equivalent with identical electrical specifications and TO-220-3 package configuration. Supplied in bulk packaging format. Compliance certifications not specified in available documentation.

All three parts maintain active product status and satisfy the core electrical and mechanical requirements for direct substitution in TO-220-3 through-hole applications. Selection between alternatives is determined by supply availability, packaging format preference (tube versus bulk), temperature operating range requirements, and compliance documentation needs.

Frequently Asked Questions (FAQ)

Q: Can TIP120G replace TIP120 in existing circuit designs?

A: Yes. The TIP120G maintains identical electrical specifications including 5 A maximum collector current, 60 V breakdown voltage, 4 V saturation voltage, and 1000 minimum DC current gain. Both devices use the TO-220-3 package. The primary difference is the extended operating temperature range of TIP120G (−65°C to 150°C versus 150°C maximum for TIP120).

Q: What is the difference between TIP120TU and TIP120?

A: Electrical specifications are identical. The primary difference is packaging format: TIP120TU is supplied in bulk packaging, while TIP120 is supplied in tube packaging. Both use the TO-220-3 package for circuit board mounting.

Q: Are all three parts RoHS3 compliant?

A: TIP120 and TIP120G are explicitly RoHS3 compliant. TIP120TU compliance status is not specified in available documentation.

Q: Which substitute part is suitable for low-temperature applications?

A: TIP120G is rated for operation from −65°C to 150°C, making it suitable for low-temperature environments. TIP120 and TIP120TU are rated to 150°C maximum only.

Q: Can these parts be used interchangeably on the same printed circuit board?

A: Yes. All three parts use the TO-220-3 package with identical pin configuration and mechanical dimensions, enabling direct board-level substitution without layout modifications.

Q: What is the significance of the 500 µA maximum collector cutoff current specification?

A: This parameter defines the maximum leakage current when the transistor is in the off state. All three substitute parts maintain this specification, ensuring equivalent switching characteristics and standby power consumption.

Q: Are there differences in DC current gain between the substitute parts?

A: No. All three parts specify a minimum DC current gain (hFE) of 1000 at 3 A collector current and 3 V collector-emitter voltage, ensuring equivalent amplification characteristics.

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