TIP117 PNP Darlington Transistor Equivalent & Substitute Parts

Part Overview

The TIP117 is a PNP Darlington bipolar junction transistor manufactured by STMicroelectronics, rated for 100 V collector-emitter breakdown voltage and 2 A maximum collector current in a TO-220-3 through-hole package. This device is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design support and procurement continuity. The TIP117 serves applications requiring moderate-power PNP switching and amplification in industrial and consumer electronics.

Substiute Parts

TIP117

STMicroelectronicsIn Stock: 27971TIP117 Datasheet

Current PartRFQ

TIP117G

onsemiIn Stock: 4301TIP117G Datasheet

DirectRFQ

TIP116G

onsemiIn Stock: 2427TIP116G Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the TIP117 is determined by strict equivalence across the following critical parameters:

Direct Equivalent Criteria:

• Transistor Type: PNP - Darlington
• Current - Collector (Ic) Max: 2 A
• Voltage - Collector Emitter Breakdown (Max): 100 V
• Vce Saturation (Max) @ Ib, Ic: 2.5 V @ 8 mA, 2 A
• Current - Collector Cutoff (Max): 2 mA
• DC Current Gain (hFE) Min @ Ic, Vce: 1000 @ 1 A, 4 V
• Power - Max: 2 W
• Package / Case: TO-220-3
• Mounting Type: Through Hole

Similar Substitute Criteria (Reduced Voltage Rating):

• Transistor Type: PNP - Darlington
• Current - Collector (Ic) Max: 2 A
• Voltage - Collector Emitter Breakdown (Max): 80 V (reduced from 100 V)
• Vce Saturation (Max) @ Ib, Ic: 2.5 V @ 8 mA, 2 A
• Current - Collector Cutoff (Max): 2 mA
• DC Current Gain (hFE) Min @ Ic, Vce: 1000 @ 1 A, 4 V
• Power - Max: 2 W
• Package / Case: TO-220-3
• Mounting Type: Through Hole

The TIP117G (onsemi) qualifies as a direct equivalent. The TIP116G (onsemi) qualifies as a similar substitute with a reduced maximum collector-emitter breakdown voltage of 80 V, suitable for applications not exceeding this voltage specification.

Parameter Comparison

Engineering Selection Recommendations

TIP117G (onsemi) - Direct Equivalent:

The TIP117G is the primary substitute for the obsolete TIP117. This component maintains identical electrical specifications across all critical parameters: 100 V collector-emitter breakdown voltage, 2 A maximum collector current, 2 W power dissipation, and 1000 minimum DC current gain. The TIP117G carries Active product status, ensuring long-term availability and supply chain stability. Both devices are ROHS3 compliant and REACH unaffected. The TIP117G features an extended operating temperature range (-65 °C to 150 °C) compared to the TIP117 specification of 150 °C maximum, providing additional thermal margin. Pinout and package footprint are identical (TO-220-3), enabling direct board-level substitution without design modification.

TIP116G (onsemi) - Similar Substitute:

The TIP116G serves as an alternative for applications where the maximum collector-emitter breakdown voltage requirement does not exceed 80 V. This device maintains all other electrical parameters identical to the TIP117, including 2 A collector current, 2 W power dissipation, and 1000 minimum DC current gain. The TIP116G is classified as Last Time Buy, indicating limited future availability. Selection of the TIP116G is appropriate only when circuit design specifications confirm operation below 80 V collector-emitter voltage. The TIP116G is ROHS3 compliant and REACH unaffected, with an extended operating temperature range (-65 °C to 150 °C).

Frequently Asked Questions (FAQ)

Q: Can the TIP117G be used as a direct replacement for the TIP117?

A: Yes. The TIP117G (onsemi) is a direct equivalent. All electrical parameters, package configuration, and pinout are identical. The TIP117G is currently in active production, addressing the obsolescence of the original TIP117.

Q: What is the key difference between the TIP117G and TIP116G?

A: The maximum collector-emitter breakdown voltage differs: TIP117G is rated for 100 V, while TIP116G is rated for 80 V. All other electrical specifications are identical. Selection depends on the maximum voltage the circuit will experience.

Q: Is the TIP116G suitable for all TIP117 applications?

A: The TIP116G is suitable only for applications where the maximum collector-emitter voltage does not exceed 80 V. If the circuit design requires 100 V breakdown voltage capability, the TIP117G must be used.

Q: Are there any package or pinout differences between these devices?

A: No. All three devices (TIP117, TIP117G, and TIP116G) use the TO-220-3 through-hole package with identical pinout. Direct board-level substitution is possible without layout modification.

Q: What is the product status of each device?

A: TIP117 is Obsolete. TIP117G is Active and recommended for new designs and ongoing procurement. TIP116G is Last Time Buy, indicating limited future availability.

Q: Are all three devices RoHS compliant?

A: Yes. The TIP117, TIP117G, and TIP116G are all ROHS3 compliant and REACH unaffected.

Q: What is the operating temperature range for each device?

A: The TIP117 is specified to 150 °C maximum junction temperature. Both the TIP117G and TIP116G feature an extended range of -65 °C to 150 °C, providing additional thermal margin for low-temperature applications.

Q: Can I use the TIP117G in a design originally specified for the TIP117?

A: Yes. The TIP117G is electrically and mechanically equivalent to the TIP117. No design changes are required. The extended temperature range of the TIP117G provides additional design margin.