TIP116G Equivalent & Substitute Parts

Part Overview

The TIP116G is a PNP Darlington bipolar junction transistor manufactured by onsemi, housed in a TO-220-3 package for through-hole mounting applications. This device is rated for 80 V collector-emitter breakdown voltage and 2 A maximum collector current, with a maximum power dissipation of 2 W. The TIP116G is currently in Last Time Buy status, indicating that new production has been discontinued. Identifying equivalent substitute parts is necessary to ensure design continuity and maintain component availability for ongoing production and maintenance requirements.

Substiute Parts

TIP116G
onsemiIn Stock: 2427TIP116G Datasheet
TIP116G
Current Part
TIP117G
onsemiIn Stock: 4301TIP117G Datasheet
TIP117G
MFR Recommended

Key Parameters

Parameter Value Unit
Transistor Type PNP - Darlington
Current - Collector (Ic) (Max) 2 A
Voltage - Collector Emitter Breakdown (Max) 80 V
Vce Saturation (Max) @ Ib, Ic 2.5 @ 8mA, 2A V
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 1A, 4V
Power - Max 2 W
Operating Temperature Range -65 to 150 °C (TJ)
Package / Case TO-220-3
Mounting Type Through Hole

Substitute Part Grouping Explanation

Substitution of the TIP116G is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

  • Transistor topology: PNP Darlington configuration
  • Maximum collector current: 2 A minimum requirement
  • Collector-emitter breakdown voltage: Equal to or greater than 80 V
  • Vce saturation characteristics: 2.5 V @ 8mA, 2A
  • DC current gain (hFE): Minimum 1000 @ 1A, 4V
  • Power dissipation: 2 W minimum
  • Operating temperature range: -65°C to 150°C (TJ)

Mechanical Compatibility Criteria:

  • Package type: TO-220-3
  • Mounting configuration: Through Hole
  • Pin configuration: Identical to TIP116G

The TIP117G qualifies as a direct substitute based on these parameters. While the TIP117G features a higher collector-emitter breakdown voltage rating (100 V versus 80 V), all other electrical specifications remain identical or superior, and the mechanical package is identical. The higher voltage rating does not restrict application in circuits designed for 80 V operation.

Parameter Comparison

Parameter TIP116G TIP117G Unit
Manufacturer onsemi onsemi
Transistor Type PNP - Darlington PNP - Darlington
Current - Collector (Ic) (Max) 2 2 A
Voltage - Collector Emitter Breakdown (Max) 80 100 V
Vce Saturation (Max) @ Ib, Ic 2.5 @ 8mA, 2A 2.5 @ 8mA, 2A V
Current - Collector Cutoff (Max) 2 2 mA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 1A, 4V 1000 @ 1A, 4V
Power - Max 2 2 W
Operating Temperature Range -65 to 150 -65 to 150 °C (TJ)
Package / Case TO-220-3 TO-220-3
Mounting Type Through Hole Through Hole
RoHS Status ROHS3 Compliant ROHS3 Compliant
REACH Status REACH Unaffected REACH Unaffected
Product Status Last Time Buy Active

Engineering Selection Recommendations

The TIP117G is the qualified substitute for the TIP116G based on the following factors:

Product Status Consideration: The TIP116G is designated Last Time Buy, indicating discontinued production. The TIP117G maintains Active product status with onsemi, ensuring ongoing availability and supply chain continuity.

Compliance and Certification: Both devices maintain identical RoHS3 compliance and REACH Unaffected status, satisfying regulatory requirements for new designs and production environments.

Electrical Performance: The TIP117G provides equivalent or superior electrical performance across all specified parameters. The increased collector-emitter breakdown voltage (100 V versus 80 V) represents a design margin enhancement without introducing incompatibility in applications rated for 80 V operation.

Mechanical Compatibility: Identical TO-220-3 package and through-hole mounting configuration ensure direct physical substitution without PCB redesign or mechanical rework.

Inventory Availability: The TIP117G maintains higher inventory levels (4271 pcs) compared to the TIP116G (2382 pcs), supporting procurement reliability.

Frequently Asked Questions (FAQ)

Q: Can the TIP117G directly replace the TIP116G in existing designs?

A: Yes. The TIP117G is electrically and mechanically compatible with the TIP116G. All critical electrical parameters are identical or superior, and the TO-220-3 package configuration is identical. No circuit modifications are required.

Q: What is the primary difference between the TIP116G and TIP117G?

A: The TIP117G features a higher collector-emitter breakdown voltage rating of 100 V compared to the TIP116G at 80 V. All other electrical specifications, including current rating, power dissipation, gain, and saturation characteristics, are identical.

Q: Does the higher voltage rating of the TIP117G affect circuit operation?

A: No. A higher voltage rating provides additional design margin and does not restrict operation in circuits designed for 80 V. The device will function identically in applications within the 80 V specification.

Q: Are there any package or pinout differences between these devices?

A: No. Both devices use the TO-220-3 package with identical pinout and through-hole mounting configuration. Physical substitution requires no PCB modifications.

Q: Why is the TIP116G listed as Last Time Buy?

A: Last Time Buy status indicates that onsemi has discontinued new production of the TIP116G. The TIP117G remains in Active production status, making it the recommended choice for new designs and ongoing production requirements.

Q: Are both devices RoHS and REACH compliant?

A: Yes. Both the TIP116G and TIP117G are ROHS3 Compliant and REACH Unaffected, meeting current regulatory requirements for electronic components.

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