TIP112-BP Equivalent & Substitute Parts

Part Overview

The TIP112-BP is an NPN Darlington bipolar junction transistor manufactured by Micro Commercial Co, rated for 100 V collector-emitter breakdown voltage and 2 A maximum collector current in a TO-220AB through-hole package. This device is classified as obsolete, making identification of equivalent and substitute parts necessary for ongoing design support and procurement continuity. The TIP112-BP delivers 50 W maximum power dissipation and features a minimum DC current gain of 1000 at 1 A collector current and 4 V collector-emitter voltage, suitable for switching and amplification applications requiring moderate power handling.

Substiute Parts

TIP112-BP
Micro Commercial CoIn Stock: 1097TIP112-BP Datasheet
TIP112-BP
Current Part
TIP112
Solid State Inc.In Stock: 21593TIP112 Datasheet
TIP112
Direct
TIP112G
onsemiIn Stock: 2088TIP112G Datasheet
TIP112G
Direct

Key Parameters

Parameter Value Unit
Transistor Type NPN - Darlington
Current - Collector (Ic) (Max) 2 A
Voltage - Collector Emitter Breakdown (Max) 100 V
Vce Saturation (Max) @ Ib, Ic 2.5 V @ 8 mA, 2 A
Current - Collector Cutoff (Max) 2 mA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 1 A, 4 V
Power - Max 50 W
Operating Temperature (TJ) 150 °C
Mounting Type Through Hole
Package / Case TO-220-3
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the TIP112-BP is determined by strict equivalence across the following electrical and mechanical parameters:

Critical Matching Parameters:

  • Transistor Type: NPN - Darlington configuration
  • Maximum Collector Current (Ic): 2 A
  • Maximum Collector-Emitter Breakdown Voltage: 100 V
  • Vce Saturation characteristics: 2.5 V @ 8 mA, 2 A
  • DC Current Gain (hFE): 1000 minimum @ 1 A, 4 V
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3

Compliance Parameters:

  • RoHS3 Compliance
  • Moisture Sensitivity Level: 1 (Unlimited)

The substitute parts TIP112 (Solid State Inc.) and TIP112G (onsemi) maintain electrical equivalence across all specified ratings. Both devices are active products with confirmed availability, addressing the obsolescence status of the TIP112-BP. Package and mounting configurations remain consistent with the original part, ensuring direct mechanical compatibility in existing circuit board layouts.

Parameter Comparison

Parameter TIP112-BP (Micro Commercial Co) TIP112 (Solid State Inc.) TIP112G (onsemi)
Product Status Obsolete Active Active
Transistor Type NPN - Darlington NPN - Darlington NPN - Darlington
Current - Collector (Ic) (Max) 2 A 2 A 2 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V 100 V
Vce Saturation (Max) @ Ib, Ic 2.5 V @ 8 mA, 2 A 2.5 V @ 8 mA, 2 A 2.5 V @ 8 mA, 2 A
Current - Collector Cutoff (Max) 2 mA 2 mA 2 mA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 1 A, 4 V 1000 @ 1 A, 4 V 1000 @ 1 A, 4 V
Power - Max 50 W 50 W 2 W
Operating Temperature (TJ) 150 °C -65 °C ~ 150 °C -65 °C ~ 150 °C
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) Not Applicable

Engineering Selection Recommendations

TIP112 (Solid State Inc.) is the primary substitute for the TIP112-BP. This device maintains full electrical equivalence across all specified parameters, including the 50 W maximum power rating. The part is currently in active production status with substantial inventory availability (21,555 pcs), ensuring reliable procurement. Operating temperature range extends to -65 °C, providing broader environmental coverage than the original part. RoHS3 compliance and MSL rating of 1 (Unlimited) match the original specification.

TIP112G (onsemi) serves as an alternative substitute with identical electrical characteristics for switching and amplification functions. This device is actively manufactured and available in tube packaging (2,000 pcs in stock). The operating temperature range of -65 °C to 150 °C exceeds the original specification. A critical distinction exists in the maximum power rating: TIP112G is specified at 2 W compared to the 50 W rating of the TIP112-BP and TIP112. This power rating difference restricts TIP112G application to circuits where thermal dissipation does not exceed 2 W. RoHS3 compliance is confirmed; MSL is not applicable for this variant.

Selection between TIP112 and TIP112G depends on circuit power dissipation requirements. For applications requiring the full 50 W capability of the original TIP112-BP, the TIP112 (Solid State Inc.) is the appropriate selection. For lower-power applications within the 2 W envelope, TIP112G (onsemi) is suitable.

Frequently Asked Questions (FAQ)

Q: Can TIP112G (onsemi) directly replace TIP112-BP in all applications?

A: TIP112G is electrically equivalent for switching and amplification functions but is limited to 2 W maximum power dissipation. The original TIP112-BP and substitute TIP112 (Solid State Inc.) are rated for 50 W. Direct replacement is valid only in circuits where power dissipation does not exceed 2 W.

Q: Are the TO-220-3 packages of all three parts mechanically identical?

A: Yes. TIP112-BP, TIP112, and TIP112G all use the TO-220-3 package with through-hole mounting. Direct mechanical substitution in existing circuit board layouts is supported without modification.

Q: What is the significance of the operating temperature range difference?

A: TIP112-BP specifies a maximum junction temperature of 150 °C. Both TIP112 (Solid State Inc.) and TIP112G (onsemi) specify -65 °C to 150 °C operating range. The extended lower temperature limit provides additional environmental margin but does not affect substitution validity in standard applications.

Q: Do all three parts meet RoHS3 compliance requirements?

A: Yes. TIP112-BP, TIP112, and TIP112G are all ROHS3 Compliant, confirming compatibility with RoHS3-regulated applications and supply chains.

Q: What is the difference in packaging between TIP112 and TIP112G?

A: TIP112 (Solid State Inc.) is supplied in standard packaging. TIP112G (onsemi) is supplied in tube packaging. Both are through-hole TO-220-3 devices with identical electrical specifications and mechanical form factors.

Q: How do the DC current gain specifications compare across the three parts?

A: All three devices specify identical DC current gain (hFE) of 1000 minimum at 1 A collector current and 4 V collector-emitter voltage. This parameter is consistent across TIP112-BP, TIP112, and TIP112G.

Q: Is the TIP112-BP still available for procurement?

A: TIP112-BP is classified as obsolete. However, 1,083 pcs are reported in current inventory. For new designs and ongoing production, TIP112 (Solid State Inc., 21,555 pcs available) or TIP112G (onsemi, 2,000 pcs available) are recommended as active alternatives.

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