TIP112 NPN Darlington Transistor Equivalent & Substitute Parts

Part Overview

The TIP112 is an NPN Darlington bipolar junction transistor manufactured by STMicroelectronics, rated for 100 V collector-emitter breakdown voltage and 2 A maximum collector current in a TO-220-3 through-hole package. This device is classified as Active product status and is ROHS3 compliant. Substitute parts are identified when equivalent electrical specifications and mechanical compatibility exist, enabling component sourcing flexibility while maintaining circuit performance within specified operating parameters.

Substiute Parts

TIP112

STMicroelectronicsIn Stock: 21595TIP112 Datasheet

Current PartRFQ

TIP112G

onsemiIn Stock: 2088TIP112G Datasheet

DirectRFQ

TIP111G

onsemiIn Stock: 1028TIP111G Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the TIP112 are classified based on electrical parameter equivalence and mechanical compatibility. The primary substitution criteria are:

Direct Equivalent Classification: Parts maintaining identical electrical specifications across all critical parameters (collector current, collector-emitter breakdown voltage, saturation voltage, current gain, and power rating) with identical TO-220-3 packaging qualify as direct equivalents.

Similar Classification: Parts sharing the same transistor type, package, and mounting configuration but with reduced voltage rating (80 V versus 100 V collector-emitter breakdown) are classified as similar substitutes. These parts are suitable only for applications where the lower voltage specification does not exceed circuit requirements.

The following parameters determine substitution validity:

• Transistor Type: NPN - Darlington
• Current - Collector (Ic) (Max): 2 A
• Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
• DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V
• Power - Max: 2 W
• Package / Case: TO-220-3
• Mounting Type: Through Hole

Parameter Comparison

Engineering Selection Recommendations

TIP112G (onsemi) - Direct Equivalent: This part maintains complete electrical and mechanical equivalence to the TIP112. Both devices are Active product status with ROHS3 compliance and REACH unaffected designation. The TIP112G provides an extended operating temperature range (-65°C to 150°C) compared to the TIP112 specification of 150°C maximum. Selection of TIP112G is appropriate for applications requiring identical electrical performance with potential thermal operating range extension.

TIP111G (onsemi) - Similar Substitute: This part shares identical current, saturation voltage, current gain, power rating, and package specifications with the TIP112. The collector-emitter breakdown voltage is reduced to 80 V. The TIP111G is Active product status with ROHS3 compliance and REACH unaffected designation. Selection of TIP111G is appropriate only for applications where the circuit design operates at collector-emitter voltages not exceeding 80 V. Applications requiring the full 100 V rating of the TIP112 must not use the TIP111G.

Frequently Asked Questions (FAQ)

Q: Can TIP112G be used as a direct replacement for TIP112?

A: Yes. The TIP112G maintains identical electrical specifications including 100 V collector-emitter breakdown voltage, 2 A maximum collector current, 2.5 V saturation voltage, and 1000 minimum DC current gain. Both devices use TO-220-3 through-hole packaging. The TIP112G provides an extended operating temperature range and is ROHS3 compliant.

Q: What is the key difference between TIP112 and TIP111G?

A: The primary difference is the collector-emitter breakdown voltage rating. The TIP112 is rated for 100 V maximum, while the TIP111G is rated for 80 V maximum. All other electrical parameters including current, saturation voltage, current gain, and power rating are identical. The TIP111G is suitable only for applications where circuit voltages do not exceed 80 V.

Q: Are all substitute parts in TO-220-3 packaging?

A: Yes. The TIP112, TIP112G, and TIP111G all use TO-220-3 through-hole packaging with identical mechanical dimensions and pin configuration, enabling direct physical substitution in PCB layouts.

Q: Do all parts meet RoHS compliance requirements?

A: Yes. The TIP112, TIP112G, and TIP111G are all ROHS3 compliant and REACH unaffected, meeting environmental and regulatory requirements for electronic component sourcing.

Q: What is the significance of the DC Current Gain (hFE) specification?

A: The DC Current Gain of 1000 minimum at 1 A collector current and 4 V collector-emitter voltage indicates the amplification factor of the Darlington transistor. All substitute parts maintain this specification, ensuring equivalent base drive requirements and circuit performance in switching and amplification applications.

Q: Can TIP111G be used in a circuit designed for TIP112?

A: TIP111G can be used only if the circuit design operates at collector-emitter voltages not exceeding 80 V. If the application requires the full 100 V voltage rating, TIP111G is not suitable. Review circuit voltage specifications before substitution.