TIP112 Equivalent & Substitute Parts

Part Overview

The TIP112 is a Bipolar (BJT) Transistor configured as an NPN Darlington type, rated for 100 V collector-emitter breakdown voltage and 2 A maximum collector current. Manufactured by onsemi, this through-hole component in TO-220-3 package is classified as Obsolete product status. Due to its obsolete classification, identifying equivalent and substitute parts with active product status is necessary to ensure continued design support, supply chain reliability, and access to components with current manufacturing certifications.

Substiute Parts

TIP112
onsemiIn Stock: 21568TIP112 Datasheet
TIP112
Current Part
TIP112G
onsemiIn Stock: 2088TIP112G Datasheet
TIP112G
Direct
TIP112
Solid State Inc.In Stock: 21593TIP112 Datasheet
TIP112
Direct

Key Parameters

Parameter Value Unit
Transistor Type NPN - Darlington
Current - Collector (Ic) (Max) 2 A
Voltage - Collector Emitter Breakdown (Max) 100 V
Vce Saturation (Max) @ Ib, Ic 2.5V @ 8mA, 2A V
Current - Collector Cutoff (Max) 2 mA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 1A, 4V
Power - Max 2 W
Operating Temperature (TJ) 150 °C
Mounting Type Through Hole
Package / Case TO-220-3

Substitute Part Grouping Explanation

Substitution of the TIP112 is determined by strict equivalence across the following electrical and mechanical parameters:

Electrical Parameters (Critical for Substitution):

  • Transistor Type: NPN - Darlington configuration
  • Maximum Collector Current (Ic): 2 A
  • Maximum Collector-Emitter Breakdown Voltage: 100 V
  • Vce Saturation characteristics: 2.5V @ 8mA, 2A
  • DC Current Gain (hFE): 1000 @ 1A, 4V minimum
  • Maximum Collector Cutoff Current: 2 mA

Mechanical Parameters (Critical for Substitution):

  • Mounting Type: Through Hole
  • Package / Case: TO-220-3

Substitute parts must maintain identical electrical specifications across all listed parameters. Variations in power rating, operating temperature range, or manufacturing status do not disqualify a part from substitution provided all electrical and mechanical parameters remain within specification.

Parameter Comparison

Parameter TIP112 (onsemi) TIP112G (onsemi) TIP112 (Solid State Inc.)
Transistor Type NPN - Darlington NPN - Darlington NPN - Darlington
Current - Collector (Ic) (Max) 2 A 2 A 2 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V 100 V
Vce Saturation (Max) @ Ib, Ic 2.5V @ 8mA, 2A 2.5V @ 8mA, 2A 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max) 2 mA 2 mA 2 mA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 1A, 4V 1000 @ 1A, 4V 1000 @ 1A, 4V
Power - Max 2 W 2 W 50 W
Operating Temperature (TJ) 150°C -65°C ~ 150°C -65°C ~ 150°C
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3
Product Status Obsolete Active Active
RoHS Status Not Specified ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

TIP112G (onsemi) is the primary substitute for the obsolete TIP112 (onsemi). This part maintains identical electrical specifications across all critical parameters: collector current, breakdown voltage, saturation characteristics, and current gain. The TIP112G carries Active product status with ROHS3 compliance certification, ensuring long-term supply chain availability and adherence to current environmental regulations. The extended operating temperature range (-65°C ~ 150°C) provides additional thermal margin compared to the original part specification.

TIP112 (Solid State Inc.) is an alternative substitute manufactured by Solid State Inc. This part is electrically equivalent across all specified parameters and carries Active product status with ROHS3 compliance. The higher power rating (50 W versus 2 W) does not disqualify this part for substitution; however, thermal management characteristics may differ due to manufacturing variations. This part is suitable for applications where the original 2 W specification is adequate and thermal dissipation is not a limiting factor.

Both substitute parts are compatible with existing circuit designs utilizing the original TIP112 component, provided that board-level thermal design and component placement accommodate the through-hole TO-220-3 package format.

Frequently Asked Questions (FAQ)

Q: Can TIP112G replace the original TIP112 in existing designs?

A: Yes. The TIP112G maintains identical electrical specifications for collector current (2 A), breakdown voltage (100 V), saturation voltage, and current gain. Both parts use the TO-220-3 through-hole package. The TIP112G is electrically and mechanically compatible with designs originally specified for the TIP112.

Q: What is the difference between TIP112 and TIP112G?

A: Both parts are manufactured by onsemi and share identical electrical specifications. The primary differences are product status (TIP112G is Active versus TIP112 Obsolete), packaging designation (Tube for TIP112G), operating temperature range (TIP112G: -65°C ~ 150°C versus TIP112: 150°C maximum), and compliance certifications (TIP112G carries ROHS3 compliance).

Q: Is the Solid State Inc. TIP112 suitable as a substitute?

A: Yes. The Solid State Inc. TIP112 is electrically equivalent across all specified parameters and carries Active product status with ROHS3 compliance. The 50 W power rating exceeds the original 2 W specification, which does not prevent substitution. Verify that thermal management and board layout accommodate the TO-220-3 package format.

Q: Are there any package compatibility concerns?

A: No. All three parts use the TO-220-3 through-hole package. Pin configuration and mechanical dimensions are identical, allowing direct board-level substitution without layout modifications.

Q: Which substitute part should be selected for new designs?

A: TIP112G (onsemi) is the recommended choice for new designs. It carries Active product status, ROHS3 compliance certification, and extended operating temperature range, ensuring long-term supply availability and regulatory compliance.

Q: Do the substitute parts have different thermal characteristics?

A: The Solid State Inc. TIP112 has a higher power rating (50 W) compared to the original specification (2 W). Thermal performance depends on manufacturing process, die size, and package construction. Verify thermal characteristics against application requirements and thermal management design.

Q: Are there any electrical performance differences between the substitute parts?

A: No. All three parts maintain identical electrical specifications for the critical parameters that determine substitution: collector current, breakdown voltage, saturation voltage, and current gain. Differences in power rating and operating temperature range do not affect electrical performance within the specified operating conditions.

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