TIP111 Equivalent & Substitute Parts

Part Overview

The TIP111 is an NPN Darlington bipolar junction transistor manufactured by onsemi, designed for through-hole mounting in TO-220-3 package configuration. This device is rated for 80 V collector-emitter breakdown voltage and 2 A maximum collector current, with a maximum power dissipation of 2 W. The TIP111 is classified as obsolete product status, necessitating identification of equivalent and substitute components for ongoing design requirements and procurement continuity.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN - Darlington	—
Current - Collector (Ic) (Max)	2	A
Voltage - Collector Emitter Breakdown (Max)	80	V
Vce Saturation (Max) @ Ib, Ic	2.5 V @ 8 mA, 2 A	—
Current - Collector Cutoff (Max)	2	mA
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 1 A, 4 V	—
Power - Max	2	W
Operating Temperature	-65 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-220-3	—

Substitute Part Grouping Explanation

Substitute parts for the TIP111 are classified based on electrical parameter compatibility and mechanical form factor alignment. The primary substitution criteria are:

Direct Electrical Equivalence Parameters:

Transistor type: NPN - Darlington configuration
Maximum collector current: 2 A
Collector-emitter breakdown voltage: 80 V or greater
Vce saturation characteristics: 2.5 V @ 8 mA, 2 A
DC current gain (hFE): 1000 @ 1 A, 4 V minimum
Operating temperature range: -65°C to 150°C (TJ)

Mechanical Compatibility Parameters:

Mounting type: Through Hole
Package configuration: TO-220-3

Direct Equivalent: TIP111G maintains identical electrical specifications and operating parameters while offering active product status and RoHS3 compliance.

Similar Substitute: TIP112 provides electrical compatibility with enhanced voltage rating (100 V) and significantly increased power dissipation capability (50 W), maintaining identical collector current, saturation characteristics, and current gain specifications.

Parameter Comparison

Parameter	TIP111	TIP111G	TIP112
Manufacturer	onsemi	onsemi	Solid State Inc.
Product Status	Obsolete	Active	Active
Transistor Type	NPN - Darlington	NPN - Darlington	NPN - Darlington
Current - Collector (Ic) (Max)	2 A	2 A	2 A
Voltage - Collector Emitter Breakdown (Max)	80 V	80 V	100 V
Vce Saturation (Max) @ Ib, Ic	2.5 V @ 8 mA, 2 A	2.5 V @ 8 mA, 2 A	2.5 V @ 8 mA, 2 A
Current - Collector Cutoff (Max)	2 mA	2 mA	2 mA
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 1 A, 4 V	1000 @ 1 A, 4 V	1000 @ 1 A, 4 V
Power - Max	2 W	2 W	50 W
Operating Temperature	-65 to 150 °C (TJ)	-65 to 150 °C (TJ)	-65 to 150 °C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole
Package / Case	TO-220-3	TO-220-3	TO-220-3
RoHS Status	RoHS non-compliant	RoHS3 Compliant	RoHS3 Compliant

Engineering Selection Recommendations

TIP111G Selection Criteria: TIP111G is the direct equivalent replacement for TIP111 applications. This part maintains identical electrical specifications across all critical parameters including collector current, breakdown voltage, saturation characteristics, and current gain. TIP111G offers active product status, ensuring long-term availability and supply chain continuity. The part is RoHS3 compliant, meeting current environmental and regulatory requirements. Selection of TIP111G is appropriate for direct substitution in existing TIP111 circuit designs without modification.

TIP112 Selection Criteria: TIP112 is a similar substitute suitable for applications where enhanced voltage margin or increased power dissipation capability is beneficial. The 100 V collector-emitter breakdown voltage provides 20 V additional headroom compared to TIP111. The 50 W power rating represents a 25-fold increase over the 2 W TIP111 rating, enabling operation in higher thermal environments or with increased power handling requirements. TIP112 maintains identical collector current, saturation voltage, and current gain specifications, ensuring functional compatibility in signal-level switching and amplification circuits. TIP112 is RoHS3 compliant and carries active product status. Selection of TIP112 is appropriate when circuit design permits the higher voltage and power ratings.

Frequently Asked Questions (FAQ)

Q: Can TIP111G be used as a direct replacement for TIP111 in existing designs?

A: Yes. TIP111G maintains identical electrical specifications for collector current (2 A), collector-emitter breakdown voltage (80 V), saturation characteristics (2.5 V @ 8 mA, 2 A), DC current gain (1000 @ 1 A, 4 V), and operating temperature range (-65°C to 150°C). Both parts use TO-220-3 through-hole packaging. No circuit modifications are required.

Q: What is the primary difference between TIP111 and TIP112?

A: TIP112 provides higher collector-emitter breakdown voltage (100 V versus 80 V) and significantly increased power dissipation capability (50 W versus 2 W). Collector current, saturation characteristics, and current gain remain identical. TIP112 is suitable for applications requiring enhanced voltage margin or higher thermal performance.

Q: Are TIP111G and TIP112 both RoHS compliant?

A: Yes. Both TIP111G and TIP112 are RoHS3 compliant. The original TIP111 is RoHS non-compliant. Selection of either substitute part satisfies current environmental and regulatory compliance requirements.

Q: Can TIP112 be used in applications designed for TIP111?

A: Yes, with design verification. TIP112 maintains identical collector current (2 A), saturation characteristics (2.5 V @ 8 mA, 2 A), and current gain (1000 @ 1 A, 4 V) specifications. The higher voltage rating (100 V) and power capability (50 W) are backward compatible with TIP111 circuit designs. Thermal performance may improve due to increased power rating.

Q: What is the product status of each part?

A: TIP111 is classified as obsolete. TIP111G and TIP112 are both active products, ensuring ongoing availability and supply chain support.

Q: Are all three parts available in TO-220-3 package?

A: Yes. TIP111, TIP111G, and TIP112 are all configured in TO-220-3 through-hole package format, ensuring mechanical compatibility in existing PCB layouts.

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