TIP111 Equivalent & Substitute Parts

Part Overview

The TIP111 is an NPN Darlington bipolar junction transistor manufactured by Central Semiconductor Corp, designed for through-hole applications in the TO-220-3 package. This device operates at a maximum collector-emitter voltage of 80 V with a maximum collector current of 2 A and a power dissipation rating of 50 W. The TIP111 is classified as an obsolete product, making identification of suitable substitute components necessary for ongoing design support and component procurement in legacy systems or where inventory depletion occurs.

Substiute Parts

TIP111
Central Semiconductor CorpIn Stock: 6308TIP111 Datasheet
TIP111
Current Part
TIP112 TIN/LEAD
Central Semiconductor CorpIn Stock: 1102TIP112 TIN/LEAD Datasheet
TIP112 TIN/LEAD
Direct

Key Parameters

Parameter Value Unit
Transistor Type NPN - Darlington
Voltage - Collector Emitter Breakdown (Max) 80 V
Current - Collector (Ic) (Max) 2 A
Vce Saturation (Max) @ Ib, Ic 2.5 V @ 8 mA, 2 A
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 1 A, 4 V
Power - Max 50 W
Frequency - Transition 25 MHz
Operating Temperature Range -65 to 150 °C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3

Substitute Part Grouping Explanation

Substitution of the TIP111 is determined by strict adherence to the following electrical and mechanical parameters:

Mandatory Matching Parameters:

  • Transistor Type: NPN - Darlington configuration
  • Package / Case: TO-220-3 (physical and pin compatibility)
  • Mounting Type: Through Hole
  • Operating Temperature Range: -65°C to 150°C (TJ)
  • Vce Saturation (Max) @ Ib, Ic: 2.5 V @ 8 mA, 2 A
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1 A, 4 V
  • Frequency - Transition: 25 MHz

Allowable Parameter Variations:

  • Voltage - Collector Emitter Breakdown (Max): Equal to or greater than 80 V
  • Current - Collector (Ic) (Max): Equal to or greater than 2 A
  • Power - Max: Equal to or greater than 50 W

The TIP112 qualifies as a direct substitute based on these criteria. The TIP112 maintains identical saturation voltage, current gain, transition frequency, operating temperature range, and package configuration. The TIP112 provides an increased collector-emitter breakdown voltage of 100 V, which exceeds the TIP111 requirement of 80 V, ensuring compatibility in all applications where the TIP111 was specified.

Parameter Comparison

Parameter TIP111 TIP112 Unit
Transistor Type NPN - Darlington NPN - Darlington
Voltage - Collector Emitter Breakdown (Max) 80 100 V
Current - Collector (Ic) (Max) 2 2 A
Vce Saturation (Max) @ Ib, Ic 2.5 V @ 8 mA, 2 A 2.5 V @ 8 mA, 2 A
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 1 A, 4 V 1000 @ 1 A, 4 V
Frequency - Transition 25 25 MHz
Operating Temperature Range -65 to 150 -65 to 150 °C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-220-3 TO-220-3
Product Status Obsolete Active

Engineering Selection Recommendations

The TIP112 is the appropriate substitute for the TIP111 based on the following engineering criteria:

Product Status Consideration: The TIP111 is classified as obsolete, whereas the TIP112 maintains active product status. This distinction is significant for long-term component availability and supply chain continuity.

Electrical Compatibility: The TIP112 maintains all critical electrical parameters identical to the TIP111, including saturation voltage, current gain, and transition frequency. The increased collector-emitter breakdown voltage of 100 V provides enhanced voltage margin compared to the TIP111 specification of 80 V, ensuring the TIP112 functions correctly in all circuit configurations designed for the TIP111.

Mechanical and Thermal Compatibility: Both devices share identical TO-220-3 package geometry, pin configuration, and operating temperature range, ensuring direct physical and thermal substitution without circuit board modification or thermal management redesign.

Compliance Status: Both the TIP111 and TIP112 carry identical RoHS non-compliant and REACH Unaffected designations, maintaining consistency in regulatory compliance documentation for legacy system applications.

Frequently Asked Questions (FAQ)

Q: Can the TIP112 be used as a direct replacement for the TIP111 in existing circuit designs?

A: Yes. The TIP112 maintains identical electrical performance in all critical parameters: saturation voltage, current gain, transition frequency, and operating temperature range. The increased collector-emitter breakdown voltage of 100 V provides additional voltage margin. No circuit modifications are required.

Q: Are the TIP111 and TIP112 physically interchangeable?

A: Yes. Both devices use the TO-220-3 package with identical pin configuration and mechanical dimensions. Direct board-level substitution is possible without component repositioning or thermal management changes.

Q: Why is the TIP112 rated for 100 V instead of 80 V?

A: The TIP112 is a higher-voltage variant within the same Darlington transistor family. The increased voltage rating does not affect performance in applications designed for 80 V operation; it only provides additional safety margin against voltage transients and overstress conditions.

Q: What is the significance of the TIP111 being classified as obsolete?

A: Obsolete status indicates the manufacturer has discontinued production. The TIP112, with active product status, ensures continued availability for component procurement and reduces supply chain risk in ongoing production or maintenance scenarios.

Q: Are there any compliance differences between the TIP111 and TIP112?

A: No. Both devices share identical RoHS non-compliant and REACH Unaffected designations. Regulatory compliance documentation remains consistent when substituting the TIP112 for the TIP111.

Q: Can the TIP112 handle the same power dissipation as the TIP111?

A: Yes. Both devices are rated for 50 W maximum power dissipation. Thermal management requirements and heat sink specifications remain unchanged when substituting the TIP112 for the TIP111.

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