TIP106G Equivalent & Substitute Parts

Part Overview

The TIP106G is a PNP Darlington bipolar junction transistor manufactured by onsemi, rated for 80 V collector-emitter breakdown voltage and 8 A maximum collector current in a TO-220-3 through-hole package. This device is classified as obsolete, necessitating identification of equivalent substitute components for ongoing design requirements and production continuity. Substitute parts maintain functional compatibility while offering improved availability and active product status.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP - Darlington	—
Current - Collector (Ic) (Max)	8	A
Voltage - Collector Emitter Breakdown (Max)	80	V
Vce Saturation (Max) @ Ib, Ic	2.5 @ 80mA, 8A	V
Current - Collector Cutoff (Max)	50	µA
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 3A, 4V	—
Power - Max	2	W
Operating Temperature	-65 to 150	°C (TJ)
Package / Case	TO-220-3	—
Mounting Type	Through Hole	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitute parts for the TIP106G are selected based on strict electrical and mechanical parameter compatibility. The primary substitution criteria are:

Electrical Parameters:

Transistor Type: PNP - Darlington configuration
Current - Collector (Ic) (Max): 8 A minimum
Voltage - Collector Emitter Breakdown (Max): Equal to or greater than 80 V
Vce Saturation (Max): 2.5 V @ 80mA, 8A
Current - Collector Cutoff (Max): 50 µA maximum
DC Current Gain (hFE) (Min): 1000 @ 3A, 4V minimum
Power - Max: 2 W minimum
Operating Temperature Range: -65°C to 150°C (TJ)

Mechanical Parameters:

Package / Case: TO-220-3
Mounting Type: Through Hole

Substitute parts meeting all these criteria are classified as direct equivalents. Parts exceeding the voltage rating while maintaining all other parameters are classified as compatible upgrades with enhanced voltage margin.

Parameter Comparison

Parameter	TIP106G (onsemi)	TIP107G (onsemi)	TIP107 (STMicroelectronics)
Transistor Type	PNP - Darlington	PNP - Darlington	PNP - Darlington
Current - Collector (Ic) (Max)	8 A	8 A	8 A
Voltage - Collector Emitter Breakdown (Max)	80 V	100 V	100 V
Vce Saturation (Max) @ Ib, Ic	2.5V @ 80mA, 8A	2.5V @ 80mA, 8A	2.5V @ 80mA, 8A
Current - Collector Cutoff (Max)	50 µA	50 µA	50 µA
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 3A, 4V	1000 @ 3A, 4V	1000 @ 3A, 4V
Power - Max	2 W	2 W	2 W
Operating Temperature	-65 to 150°C (TJ)	-65 to 150°C (TJ)	150°C (TJ)
Package / Case	TO-220-3	TO-220-3	TO-220-3
Mounting Type	Through Hole	Through Hole	Through Hole
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Product Status	Obsolete	Active	Active

Engineering Selection Recommendations

TIP107G (onsemi) is the primary direct substitute for TIP106G. This part maintains identical electrical specifications while providing a 20 V increase in collector-emitter breakdown voltage (100 V vs. 80 V). The TIP107G is manufactured by the same supplier (onsemi), carries active product status, and holds ROHS3 compliance. The enhanced voltage rating provides additional design margin without compromising any other electrical or mechanical parameters.

TIP107 (STMicroelectronics) is a secondary substitute offering equivalent electrical performance with the same 100 V voltage rating. This part is manufactured by an alternative supplier and maintains active product status with ROHS3 compliance. The operating temperature specification differs slightly, listing only the maximum junction temperature (150°C) rather than the full range. Both substitute parts are suitable for applications where the TIP106G was originally specified, with the voltage upgrade providing enhanced reliability in circuits operating near the original 80 V rating.

Frequently Asked Questions (FAQ)

Q: Can TIP107G directly replace TIP106G in existing designs?

A: Yes. TIP107G maintains all electrical specifications of TIP106G while providing a higher collector-emitter breakdown voltage (100 V vs. 80 V). The identical current rating (8 A), saturation voltage, gain, power dissipation, and thermal operating range ensure functional compatibility. The TO-220-3 package and through-hole mounting are identical.

Q: What is the primary difference between TIP107G and TIP107?

A: Both parts are PNP Darlington transistors with identical electrical ratings (100 V, 8 A, 2 W). The primary difference is manufacturer: TIP107G is manufactured by onsemi, while TIP107 is manufactured by STMicroelectronics. Both are active products with ROHS3 compliance.

Q: Why does TIP106G require substitution?

A: TIP106G is classified as obsolete. Substitute parts (TIP107G and TIP107) are active products with established supply chains and ongoing manufacturing support.

Q: Are there any thermal considerations when substituting TIP107 for TIP106G?

A: TIP107 (STMicroelectronics) specifies only the maximum junction temperature (150°C), while TIP106G and TIP107G specify the full operating range (-65°C to 150°C). For applications requiring operation below 0°C, TIP107G is the preferred substitute.

Q: Do substitute parts require PCB layout modifications?

A: No. Both TIP107G and TIP107 use the TO-220-3 package with identical pin configuration and through-hole mounting specifications as TIP106G. No PCB redesign is required.

Q: Are all substitute parts RoHS compliant?

A: Yes. TIP106G, TIP107G, and TIP107 are all ROHS3 compliant. REACH status is unaffected for all three parts.

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