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TIP105 Equivalent & Substitute Parts Reference
Part Overview
The TIP105 is a PNP Darlington bipolar junction transistor (BJT) designed for through-hole mounting in TO-220-3 package configuration. This component operates at maximum collector current of 8 A, collector-emitter breakdown voltage of 60 V, and maximum power dissipation of 80 W. The TIP105 manufactured by Central Semiconductor Corp is classified as obsolete product status, necessitating identification of equivalent alternatives from active manufacturers to ensure supply chain continuity and design flexibility.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | PNP - Darlington | — |
| Current - Collector (Ic) Maximum | 8 | A |
| Voltage - Collector Emitter Breakdown (Max) | 60 | V |
| Vce Saturation (Max) | 2.5 | V @ 80mA, 8A |
| Current - Collector Cutoff (Max) | 50 | µA |
| DC Current Gain (hFE) Minimum | 1000 | @ 3A, 4V |
| Power - Maximum | 80 | W |
| Frequency - Transition | 4 | MHz |
| Operating Temperature Range | -65 to 150 | °C (TJ) |
| Mounting Type | Through Hole | — |
| Package / Case | TO-220-3 | — |
| Moisture Sensitivity Level | 1 (Unlimited) | — |
Substitute Part Grouping Explanation
Substitution of the TIP105 is determined by strict equivalence across all electrical and mechanical parameters. The substitute relationship is established when the alternative component maintains identical specifications in the following critical categories:
Electrical Parameters: Transistor type (PNP - Darlington), maximum collector current (8 A), collector-emitter breakdown voltage (60 V), saturation voltage (2.5 V @ 80mA, 8A), collector cutoff current (50 µA), DC current gain minimum (1000 @ 3A, 4V), maximum power dissipation (80 W), and transition frequency (4 MHz).
Thermal Parameters: Operating temperature range (-65°C to 150°C junction temperature).
Mechanical Parameters: Through-hole mounting type and TO-220-3 package configuration.
The TIP105 from NTE Electronics, Inc qualifies as a direct equivalent substitute based on complete parameter alignment across all electrical, thermal, and mechanical specifications.
Parameter Comparison
| Parameter | Central Semiconductor TIP105 | NTE Electronics TIP105 | Match |
|---|---|---|---|
| Transistor Type | PNP - Darlington | PNP - Darlington | ✓ |
| Current - Collector (Ic) Max | 8 A | 8 A | ✓ |
| Voltage - Collector Emitter Breakdown (Max) | 60 V | 60 V | ✓ |
| Vce Saturation (Max) | 2.5 V @ 80mA, 8A | 2.5 V @ 80mA, 8A | ✓ |
| Current - Collector Cutoff (Max) | 50 µA | 50 µA | ✓ |
| DC Current Gain (hFE) Min | 1000 @ 3A, 4V | 1000 @ 3A, 4V | ✓ |
| Power - Maximum | 80 W | 80 W | ✓ |
| Frequency - Transition | 4 MHz | 4 MHz | ✓ |
| Operating Temperature | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | ✓ |
| Mounting Type | Through Hole | Through Hole | ✓ |
| Package / Case | TO-220-3 | TO-220-3 | ✓ |
Engineering Selection Recommendations
The NTE Electronics TIP105 serves as a direct functional equivalent to the obsolete Central Semiconductor TIP105. Selection between these components is determined by product status and compliance requirements rather than electrical performance differentiation.
Product Status Consideration: The Central Semiconductor TIP105 carries obsolete product status, indicating discontinued manufacturing and limited availability. The NTE Electronics TIP105 maintains active product status, ensuring ongoing supply chain access and manufacturing support.
Compliance Status: The NTE Electronics TIP105 is classified as RoHS non-compliant. Both components share identical ECCN (EAR99) and HTSUS (8541.29.0095) classifications. The Central Semiconductor variant lists REACH Unaffected status, while the NTE Electronics variant does not specify REACH compliance in the provided data.
For applications requiring active product support and continuous availability, the NTE Electronics TIP105 is the appropriate selection. Both components maintain identical electrical performance characteristics and mechanical compatibility within TO-220-3 through-hole applications.
Frequently Asked Questions (FAQ)
Q: Can the NTE Electronics TIP105 replace the Central Semiconductor TIP105 in existing designs?
A: Yes. Both components are electrically and mechanically identical across all specified parameters. Direct substitution is supported without circuit modification or re-qualification.
Q: What determines whether a part qualifies as a substitute for the TIP105?
A: Substitution requires exact equivalence in transistor type (PNP - Darlington), maximum collector current (8 A), collector-emitter breakdown voltage (60 V), saturation voltage (2.5 V @ 80mA, 8A), DC current gain (1000 @ 3A, 4V), power dissipation (80 W), transition frequency (4 MHz), operating temperature range (-65°C to 150°C), and TO-220-3 through-hole package configuration.
Q: Why is the Central Semiconductor TIP105 listed as obsolete?
A: Obsolete status indicates the manufacturer has discontinued production. This classification necessitates identification of active alternatives to maintain design continuity and supply availability.
Q: Are there differences in packaging between the Central Semiconductor and NTE Electronics versions?
A: Both versions use TO-220-3 through-hole package configuration. The NTE Electronics variant specifies Bag packaging format, while the Central Semiconductor variant does not specify packaging format in the provided data. Both are compatible with identical PCB footprints and thermal management solutions.
Q: What compliance certifications apply to TIP105 substitutes?
A: Both variants share ECCN EAR99 and HTSUS 8541.29.0095 classifications. The NTE Electronics TIP105 is RoHS non-compliant. REACH compliance status differs between manufacturers and should be verified against specific application requirements.
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