TIP102TU Equivalent & Substitute Parts

Part Overview

The TIP102TU is an NPN Darlington bipolar junction transistor manufactured by onsemi, rated for 100 V collector-emitter breakdown voltage and 8 A maximum collector current in a TO-220-3 through-hole package. This device is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement continuity. The TIP102TU serves applications requiring moderate power switching and amplification with Darlington configuration for high current gain.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN - Darlington	—
Current - Collector (Ic) (Max)	8	A
Voltage - Collector Emitter Breakdown (Max)	100	V
Vce Saturation (Max) @ Ib, Ic	2.5V @ 80mA, 8A	—
Current - Collector Cutoff (Max)	50	µA
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 3A, 4V	—
Power - Max	2	W
Operating Temperature (TJ)	150	°C
Mounting Type	Through Hole	—
Package / Case	TO-220-3	—

Substitute Part Grouping Explanation

Substitution of the TIP102TU is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

Collector-emitter breakdown voltage: 100 V (exact match required)
Maximum collector current: 8 A or greater
Transistor type: NPN - Darlington configuration
DC current gain (hFE): minimum 1000 at specified operating points
Package type: TO-220-3 through-hole mounting

Mechanical Compatibility Criteria:

Package / Case: TO-220-3
Mounting Type: Through Hole

Substitute parts are grouped into two categories:

Direct Equivalents: Parts with identical electrical specifications and active product status, providing drop-in replacement capability.

Similar Substitutes: Parts meeting core electrical requirements (100 V, 8 A, NPN Darlington, TO-220-3) but with variations in secondary parameters such as power dissipation rating, saturation voltage, or cutoff current. These parts are functionally compatible within the specified electrical envelope.

Parameter Comparison

Part Number	Manufacturer	Product Status	Ic (Max) [A]	Vce Breakdown (Max) [V]	Vce Sat (Max) [V]	Cutoff Current (Max) [µA]	hFE (Min)	Power (Max) [W]	Operating Temp (TJ) [°C]	Package
TIP102TU	onsemi	Obsolete	8	100	2.5	50	1000	2	150	TO-220-3
TIP102G	onsemi	Active	8	100	2.5	50	1000	2	-65 to 150	TO-220-3
TIP102	STMicroelectronics	Active	8	100	2.5	50	1000	2	150	TO-220-3
2N6045G	onsemi	Active	8	100	2.0	20	1000	75	-65 to 150	TO-220-3
BDX53CG	onsemi	Active	8	100	2.0	500	750	65	-65 to 150	TO-220-3
BDX53C	onsemi	Obsolete	8	100	2.0	500	750	60	150	TO-220-3
TIP122G	onsemi	Active	5	100	4.0	500	1000	2	-65 to 150	TO-220-3
TIP132	STMicroelectronics	Active	8	100	4.0	500	1000	2	150	TO-220-3

Engineering Selection Recommendations

Preferred Direct Equivalents:

TIP102G (onsemi) and TIP102 (STMicroelectronics) are direct electrical equivalents to the TIP102TU, offering identical specifications for collector current, breakdown voltage, saturation voltage, and current gain. Both parts are in active product status with RoHS3 compliance. TIP102G provides extended operating temperature range (-65°C to 150°C) compared to the TIP102TU specification of 150°C maximum. The STMicroelectronics TIP102 maintains the same temperature specification as the original part.

Active Substitutes with Enhanced Power Dissipation:

2N6045G (onsemi) and BDX53CG (onsemi) maintain the 8 A collector current and 100 V breakdown voltage specifications while offering significantly higher power dissipation ratings (75 W and 65 W respectively, compared to 2 W for the TIP102TU). These parts are suitable for applications requiring improved thermal performance. Both are RoHS3 compliant and active products with extended operating temperature range.

Current-Limited Substitute:

TIP122G (onsemi) is rated for 5 A maximum collector current, which is lower than the TIP102TU specification of 8 A. This part is suitable only for applications where the required collector current does not exceed 5 A. TIP122G is active, RoHS3 compliant, and offers extended operating temperature range.

Saturation Voltage Consideration:

TIP132 (STMicroelectronics) is an active product with 8 A collector current and 100 V breakdown voltage. However, its saturation voltage specification (4.0 V @ 30mA, 6A) is higher than the TIP102TU (2.5 V @ 80mA, 8A), resulting in greater power dissipation during saturation. This part is suitable for applications where saturation voltage variation is acceptable.

Obsolete Parts:

BDX53C (onsemi) shares the same obsolete status as the TIP102TU and should not be selected for new designs requiring long-term supply assurance.

Frequently Asked Questions (FAQ)

Q: Can TIP102G be used as a direct replacement for TIP102TU?

A: Yes. TIP102G is electrically identical to TIP102TU with matching collector current (8 A), breakdown voltage (100 V), saturation voltage (2.5 V), and current gain (1000). Both use TO-220-3 through-hole packaging. TIP102G is in active product status, making it the preferred choice for new designs and ongoing procurement.

Q: What is the difference between TIP102 (STMicroelectronics) and TIP102G (onsemi)?

A: Both parts are direct electrical equivalents with identical specifications for the critical parameters: 8 A collector current, 100 V breakdown voltage, 2.5 V saturation voltage, and 1000 minimum current gain. The primary difference is manufacturer (STMicroelectronics versus onsemi) and operating temperature specification. TIP102 (STMicroelectronics) specifies 150°C maximum, while TIP102G specifies -65°C to 150°C. Both are active products with RoHS3 compliance.

Q: Why would I select 2N6045G instead of TIP102G?

A: 2N6045G is selected when higher power dissipation capability is required. While both parts maintain 8 A collector current and 100 V breakdown voltage, 2N6045G is rated for 75 W power dissipation compared to 2 W for TIP102G. This makes 2N6045G suitable for applications with continuous or high-frequency switching where thermal management is critical. 2N6045G also provides extended operating temperature range (-65°C to 150°C).

Q: Is TIP122G a suitable substitute for TIP102TU?

A: TIP122G is a suitable substitute only for applications where the maximum required collector current does not exceed 5 A. The TIP102TU is rated for 8 A, while TIP122G is rated for 5 A maximum. Both parts share the same 100 V breakdown voltage, TO-220-3 package, and 1000 minimum current gain. TIP122G is active and RoHS3 compliant.

Q: What are the package compatibility considerations?

A: All substitute parts listed use TO-220-3 through-hole packaging, which is mechanically and electrically compatible with the TIP102TU. Pin configuration and lead spacing are identical across all listed parts, allowing direct board-level substitution without layout modifications.

Q: Can BDX53CG replace TIP102TU in all applications?

A: BDX53CG maintains the 8 A collector current and 100 V breakdown voltage required for electrical compatibility. However, BDX53CG has a lower minimum current gain (750 versus 1000) and higher maximum cutoff current (500 µA versus 50 µA). These differences may affect circuit performance in applications sensitive to current gain variation or leakage current. BDX53CG is suitable for applications where these parameter variations are acceptable and higher power dissipation (65 W) is beneficial.

Q: What compliance certifications should I verify for substitute parts?

A: All active substitute parts listed (TIP102G, TIP102, 2N6045G, BDX53CG, TIP122G, TIP132) are RoHS3 compliant and REACH unaffected. The original TIP102TU is REACH unaffected but predates RoHS3 compliance. For new designs, active parts with RoHS3 compliance are recommended to ensure regulatory alignment and long-term supply continuity.

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