TIP102-BP Equivalent & Substitute Parts

Part Overview

The TIP102-BP is an NPN Darlington bipolar junction transistor manufactured by Micro Commercial Co, rated for 100 V collector-emitter breakdown voltage and 8 A maximum collector current in a TO-220AB through-hole package. This part is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement continuity. The TIP102-BP delivers 80 W maximum power dissipation and operates across a temperature range of -55°C to 150°C.

Substiute Parts

TIP102-BP
Micro Commercial CoIn Stock: 810TIP102-BP Datasheet
TIP102-BP
Current Part
2N6045G
onsemiIn Stock: 11812N6045G Datasheet
2N6045G
Direct
TIP102
STMicroelectronicsIn Stock: 23155TIP102 Datasheet
TIP102
Direct
TIP102G
onsemiIn Stock: 1412TIP102G Datasheet
TIP102G
Direct
BDX53CG
onsemiIn Stock: 1788BDX53CG Datasheet
BDX53CG
Similar

Key Parameters

Parameter Value Unit
Transistor Type NPN - Darlington
Current - Collector (Ic) Max 8 A
Voltage - Collector Emitter Breakdown (Max) 100 V
Vce Saturation (Max) @ Ib, Ic 2.5V @ 80mA, 8A
Current - Collector Cutoff (Max) 50 µA
DC Current Gain (hFE) Min @ Ic, Vce 1000 @ 3A, 4V
Power - Max 80 W
Operating Temperature -55 to 150 °C
Mounting Type Through Hole
Package / Case TO-220-3
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the TIP102-BP is determined by matching the following critical electrical and mechanical parameters:

Primary Matching Criteria:

  • Transistor Type: NPN - Darlington configuration
  • Maximum Collector Current (Ic): 8 A
  • Collector-Emitter Breakdown Voltage: 100 V
  • DC Current Gain (hFE): Minimum 1000 @ 3A, 4V
  • Package / Case: TO-220-3 through-hole configuration
  • Mounting Type: Through Hole

Secondary Considerations:

  • Vce Saturation characteristics
  • Collector Cutoff Current
  • Operating Temperature range
  • Power dissipation capability
  • RoHS and REACH compliance status

Substitute parts are classified into two categories:

Direct Substitutes: Parts meeting all primary matching criteria with identical or superior electrical specifications and active product status.

Similar Substitutes: Parts meeting primary matching criteria with minor variations in secondary parameters such as power dissipation or cutoff current, suitable for applications where these variations do not impact circuit performance.

Parameter Comparison

Parameter TIP102-BP (Main) 2N6045G TIP102 TIP102G BDX53CG
Manufacturer Micro Commercial Co onsemi STMicroelectronics onsemi onsemi
Product Status Obsolete Active Active Active Active
Transistor Type NPN - Darlington NPN - Darlington NPN - Darlington NPN - Darlington NPN - Darlington
Ic (Max) 8 A 8 A 8 A 8 A 8 A
Vce Breakdown (Max) 100 V 100 V 100 V 100 V 100 V
Vce Saturation (Max) @ Ib, Ic 2.5V @ 80mA, 8A 2V @ 12mA, 3A 2.5V @ 80mA, 8A 2.5V @ 80mA, 8A 2V @ 12mA, 3A
Collector Cutoff Current (Max) 50 µA 20 µA 50 µA 50 µA 500 µA
DC Current Gain (hFE) Min @ Ic, Vce 1000 @ 3A, 4V 1000 @ 3A, 4V 1000 @ 3A, 4V 1000 @ 3A, 4V 750 @ 3A, 3V
Power - Max 80 W 75 W 2 W 2 W 65 W
Operating Temperature -55 to 150°C -65 to 150°C 150°C -65 to 150°C -65 to 150°C
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

Direct Substitutes (Preferred for Replacement):

The TIP102 (STMicroelectronics) and TIP102G (onsemi) are direct substitutes for the obsolete TIP102-BP. Both parts maintain identical electrical specifications including 8 A collector current, 100 V breakdown voltage, 1000 hFE minimum gain, and TO-220-3 package configuration. Both are active products with ROHS3 compliance. The TIP102G offers an extended operating temperature range of -65°C to 150°C compared to the TIP102-BP specification of -55°C to 150°C. Inventory availability is substantial for both parts, supporting production continuity.

The 2N6045G (onsemi) is a direct substitute meeting all primary electrical criteria with 8 A collector current and 100 V breakdown voltage. This part is active and ROHS3 compliant. The 2N6045G exhibits lower collector cutoff current (20 µA versus 50 µA) and operates across -65°C to 150°C, providing enhanced performance in low-leakage applications.

Similar Substitute (Application-Dependent):

The BDX53CG (onsemi) is a similar substitute suitable for applications where the specified power dissipation of 80 W is not a limiting constraint. This part meets all primary electrical criteria with 8 A collector current and 100 V breakdown voltage in TO-220-3 package. The BDX53CG is active and ROHS3 compliant. The DC current gain minimum is 750 @ 3A, 3V, which is lower than the 1000 @ 3A, 4V specification of the TIP102-BP. The collector cutoff current is 500 µA, higher than the main part. These variations require circuit-level evaluation for compatibility.

Compliance and Regulatory Status:

All substitute parts maintain ROHS3 compliance and REACH unaffected status, matching the regulatory posture of the TIP102-BP. All parts carry EAR99 ECCN classification and identical HTSUS code 8541.29.0095.

Frequently Asked Questions (FAQ)

Q: Can the TIP102G directly replace the obsolete TIP102-BP without circuit modification?

A: Yes. The TIP102G meets all primary electrical specifications of the TIP102-BP, including 8 A collector current, 100 V breakdown voltage, 1000 hFE minimum gain, and TO-220-3 package. Both parts share identical Vce saturation characteristics at 2.5V @ 80mA, 8A. The TIP102G is an active product with ROHS3 compliance.

Q: What is the difference between TIP102 and TIP102G?

A: Both parts are manufactured to identical electrical specifications for collector current, breakdown voltage, and current gain. The primary difference is manufacturer: TIP102 is from STMicroelectronics, while TIP102G is from onsemi. The TIP102G specifies an extended operating temperature range of -65°C to 150°C. Both are active products suitable for direct substitution.

Q: Is the 2N6045G suitable for the TIP102-BP application?

A: Yes, the 2N6045G is suitable for direct substitution. It meets all primary electrical criteria with 8 A collector current, 100 V breakdown voltage, and 1000 hFE minimum gain in TO-220-3 package. The 2N6045G exhibits lower collector cutoff current (20 µA) and operates across -65°C to 150°C, providing enhanced performance characteristics.

Q: Can the BDX53CG replace the TIP102-BP?

A: The BDX53CG is a similar substitute suitable for applications where power dissipation requirements do not exceed 65 W. The BDX53CG meets primary electrical criteria with 8 A collector current and 100 V breakdown voltage in TO-220-3 package. However, the DC current gain is 750 @ 3A, 3V (lower than the 1000 @ 3A, 4V specification), and collector cutoff current is 500 µA (higher than 50 µA). Circuit-level evaluation is required to confirm compatibility.

Q: Are all substitute parts available in the same TO-220-3 package?

A: Yes. All substitute parts listed—2N6045G, TIP102, TIP102G, and BDX53CG—are packaged in TO-220-3 through-hole configuration, matching the mechanical requirements of the TIP102-BP.

Q: What is the primary reason for substituting the TIP102-BP?

A: The TIP102-BP is classified as obsolete. Substitute parts are necessary to maintain design continuity and ensure long-term component availability. All recommended substitutes are active products with established supply chains and regulatory compliance.

Q: Do all substitute parts meet RoHS compliance?

A: Yes. All substitute parts—2N6045G, TIP102, TIP102G, and BDX53CG—are ROHS3 compliant and REACH unaffected, matching the regulatory status of the TIP102-BP.

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