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TIP102 NPN Darlington Transistor Equivalent & Substitute Parts
Part Overview
The TIP102 is an NPN Darlington bipolar junction transistor rated for 100 V collector-emitter breakdown voltage and 8 A maximum collector current in a TO-220 through-hole package. This device is classified as obsolete in its original onsemi packaging, necessitating identification of active equivalent and substitute components for ongoing design support and procurement.
The TIP102 serves in applications requiring moderate power switching and amplification with Darlington configuration, which provides high current gain suitable for low-impedance base drive circuits. Equivalent parts maintain the same electrical specifications, while substitute parts offer compatible performance within defined parameter tolerances.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | NPN - Darlington | — |
| Collector Current (Ic) Maximum | 8 | A |
| Collector-Emitter Breakdown Voltage | 100 | V |
| Vce Saturation (Max) | 2.5 V @ 80 mA, 8 A | — |
| DC Current Gain (hFE) Minimum | 1000 @ 3 A, 4 V | — |
| Power Dissipation Maximum | 2 | W |
| Operating Temperature Range | −65 to +150 | °C |
| Package Type | TO-220-3 | — |
| Mounting Type | Through Hole | — |
Substitute Part Grouping Explanation
Substitution of the TIP102 is determined by strict equivalence in the following electrical and mechanical parameters:
Primary Equivalence Criteria:
- Transistor type: NPN Darlington configuration
- Collector current rating: 8 A maximum
- Collector-emitter breakdown voltage: 100 V
- Package: TO-220-3 through-hole
- Operating temperature range: −65 to +150 °C
Secondary Compatibility Parameters:
- DC current gain (hFE): minimum 1000 at specified conditions
- Vce saturation characteristics
- Collector cutoff current
- Power dissipation capability
Parts are classified into two categories:
Direct Equivalents maintain identical electrical specifications and can replace the TIP102 without circuit modification. These include TIP102G (onsemi, active status) and TIP102 (STMicroelectronics, active status).
Similar Substitutes share the core electrical ratings (8 A, 100 V, NPN Darlington, TO-220) but exhibit variations in secondary parameters such as power dissipation, Vce saturation voltage, or DC current gain. These include 2N6045G, BDX53CG, BDX53C, and TIP122G. The TIP122G operates at reduced collector current (5 A maximum) and is suitable only for applications not requiring the full 8 A rating.
Parameter Comparison
| Part Number | Manufacturer | Status | Ic (Max) A | Vce(br) V | Vce Sat @ Ib, Ic | hFE (Min) | Power W | RoHS |
|---|---|---|---|---|---|---|---|---|
| TIP102 | onsemi | Obsolete | 8 | 100 | 2.5 V @ 80 mA, 8 A | 1000 @ 3 A, 4 V | 2 | Non-compliant |
| TIP102G | onsemi | Active | 8 | 100 | 2.5 V @ 80 mA, 8 A | 1000 @ 3 A, 4 V | 2 | ROHS3 Compliant |
| TIP102 | STMicroelectronics | Active | 8 | 100 | 2.5 V @ 80 mA, 8 A | 1000 @ 3 A, 4 V | 2 | ROHS3 Compliant |
| 2N6045G | onsemi | Active | 8 | 100 | 2 V @ 12 mA, 3 A | 1000 @ 3 A, 4 V | 75 | ROHS3 Compliant |
| BDX53CG | onsemi | Active | 8 | 100 | 2 V @ 12 mA, 3 A | 750 @ 3 A, 3 V | 65 | ROHS3 Compliant |
| BDX53C | onsemi | Obsolete | 8 | 100 | 2 V @ 12 mA, 3 A | 750 @ 3 A, 3 V | 60 | Not specified |
| TIP122G | onsemi | Active | 5 | 100 | 4 V @ 20 mA, 5 A | 1000 @ 3 A, 3 V | 2 | ROHS3 Compliant |
| TIP132 | STMicroelectronics | Active | 8 | 100 | 4 V @ 30 mA, 6 A | 1000 @ 4 A, 4 V | 2 | ROHS3 Compliant |
Engineering Selection Recommendations
For Direct Replacement (No Circuit Modification Required):
TIP102G (onsemi) and TIP102 (STMicroelectronics) are direct functional equivalents with identical electrical specifications to the obsolete onsemi TIP102. Both are active products with ROHS3 compliance. Selection between these two manufacturers depends on supply chain availability and procurement preferences. Both maintain the 2 W power rating and identical Vce saturation characteristics.
For Applications Tolerant of Enhanced Power Dissipation:
2N6045G provides identical collector current and voltage ratings with significantly increased power dissipation capability (75 W versus 2 W). This part is suitable for designs where thermal management permits higher power handling. The lower Vce saturation at reduced base current (2 V @ 12 mA, 3 A) may require circuit evaluation for switching applications.
For Applications with Relaxed Current Gain Requirements:
BDX53CG operates at 8 A and 100 V with 65 W power dissipation but exhibits reduced DC current gain (750 minimum versus 1000 minimum). This part is suitable only where the lower hFE does not compromise circuit performance. The higher collector cutoff current (500 µA) may affect leakage-sensitive applications.
For Current-Limited Applications:
TIP122G is rated for 5 A maximum collector current and is suitable only for applications not requiring the full 8 A capability of the TIP102. This part shares the 2 W power rating and 100 V breakdown voltage but exhibits higher Vce saturation (4 V @ 20 mA, 5 A).
For Applications Requiring Enhanced Saturation Performance:
TIP132 (STMicroelectronics) maintains 8 A and 100 V ratings with 2 W power dissipation but exhibits higher Vce saturation (4 V @ 30 mA, 6 A) compared to the TIP102. This part is active and ROHS3 compliant.
Compliance Considerations:
All active substitute parts listed carry ROHS3 compliance certification. The obsolete onsemi TIP102 is non-compliant; migration to active compliant equivalents is recommended for new designs and long-term procurement planning.
Frequently Asked Questions (FAQ)
Q: Can TIP102G directly replace the obsolete onsemi TIP102 without any circuit changes?
A: Yes. TIP102G (onsemi) maintains identical electrical specifications including 8 A collector current, 100 V breakdown voltage, 2.5 V Vce saturation at rated conditions, and 1000 minimum DC current gain. The part is packaged in TO-220-3 and operates across the same temperature range (−65 to +150 °C).
Q: What is the difference between TIP102 from onsemi and TIP102 from STMicroelectronics?
A: Both parts are electrically identical with matching specifications for collector current, voltage, saturation characteristics, and current gain. The primary difference is manufacturer and compliance status. The STMicroelectronics version is active and ROHS3 compliant, while the onsemi version is obsolete and non-compliant.
Q: Can I use 2N6045G as a substitute if my circuit requires only 2 W power dissipation?
A: Yes. The 2N6045G is rated for 75 W maximum power dissipation, which exceeds the 2 W requirement. The part maintains 8 A collector current and 100 V breakdown voltage. However, the Vce saturation specification differs (2 V @ 12 mA, 3 A versus 2.5 V @ 80 mA, 8 A), requiring verification that this change does not affect circuit performance in switching applications.
Q: Why is TIP122G listed as a substitute if it only handles 5 A?
A: TIP122G is classified as a similar substitute suitable only for applications where the collector current requirement does not exceed 5 A. It shares the NPN Darlington configuration, 100 V breakdown voltage, TO-220-3 package, and 2 W power rating. Applications requiring the full 8 A capability must use parts rated for 8 A.
Q: Are all substitute parts available in the same TO-220-3 package?
A: Yes. All listed substitute parts are packaged in TO-220-3 through-hole configuration, maintaining mechanical compatibility with the original TIP102 circuit board layout and heatsink mounting requirements.
Q: What is the significance of the DC current gain (hFE) differences between parts?
A: DC current gain determines the base current required to achieve a specified collector current. The TIP102 and most direct equivalents specify 1000 minimum hFE at 3 A collector current and 4 V Vce. BDX53CG specifies 750 minimum at 3 A and 3 V, requiring approximately 33% higher base current for equivalent collector current. Circuit designs with marginal base drive must evaluate this parameter.
Q: Can I use BDX53C (obsolete) instead of BDX53CG (active)?
A: BDX53CG is the active equivalent of the obsolete BDX53C with identical electrical specifications. For new designs and long-term procurement, BDX53CG is the appropriate selection. Both parts maintain 8 A, 100 V, and similar Vce saturation characteristics.
Q: What does ROHS3 compliance mean for component selection?
A: ROHS3 compliance indicates the part meets Restriction of Hazardous Substances Directive requirements, restricting lead, cadmium, mercury, and other hazardous materials. For applications subject to environmental regulations or customer requirements, ROHS3 compliant parts are mandatory. All active substitute parts listed carry this certification.
Q: Is the operating temperature range identical across all substitute parts?
A: The TIP102 specifies −65 to +150 °C. All listed substitute parts operate across this same temperature range, ensuring thermal compatibility in applications spanning this specification.
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