TIP102 NPN Darlington Transistor Equivalent & Substitute Parts

Part Overview

The TIP102 is an NPN Darlington bipolar junction transistor manufactured by STMicroelectronics, rated for 100 V collector-emitter breakdown voltage and 8 A maximum collector current. The device is housed in a TO-220-3 through-hole package and is classified as Active product status with ROHS3 compliance. Substitute parts are identified when equivalent electrical performance and mechanical compatibility are required due to inventory availability, supply chain considerations, or design flexibility within specified parameter tolerances.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN - Darlington	—
Current - Collector (Ic) (Max)	8	A
Voltage - Collector Emitter Breakdown (Max)	100	V
Vce Saturation (Max) @ Ib, Ic	2.5V @ 80mA, 8A	—
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 3A, 4V	—
Power - Max	2	W
Package / Case	TO-220-3	—
Mounting Type	Through Hole	—
Operating Temperature (TJ)	150	°C
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the TIP102 is determined by strict equivalence in the following electrical and mechanical parameters:

Critical Matching Parameters:

Transistor Type: NPN - Darlington configuration
Voltage - Collector Emitter Breakdown (Max): 100 V minimum
Current - Collector (Ic) (Max): 8 A minimum
Package / Case: TO-220-3
Mounting Type: Through Hole

Acceptable Variation Parameters:

Power - Max: Equal to or greater than 2 W
Vce Saturation: Within application tolerance
DC Current Gain (hFE): Equal to or greater than 1000 @ specified conditions
Operating Temperature: Equal to or greater than 150°C (TJ)
RoHS Status: ROHS3 Compliant

Substitute parts are classified as Direct (identical electrical specifications) or Similar (equivalent core function with allowable parameter variations). Parts that fail to meet critical matching parameters are excluded from substitution consideration.

Parameter Comparison

Parameter	TIP102 (STMicroelectronics)	TIP102G (onsemi)	2N6045G (onsemi)	BDX53CG (onsemi)	TIP122G (onsemi)
Transistor Type	NPN - Darlington	NPN - Darlington	NPN - Darlington	NPN - Darlington	NPN - Darlington
Current - Collector (Ic) (Max)	8 A	8 A	8 A	8 A	5 A
Voltage - Collector Emitter Breakdown (Max)	100 V	100 V	100 V	100 V	100 V
Vce Saturation (Max) @ Ib, Ic	2.5V @ 80mA, 8A	2.5V @ 80mA, 8A	2V @ 12mA, 3A	2V @ 12mA, 3A	4V @ 20mA, 5A
Current - Collector Cutoff (Max)	50µA	50µA	20µA	500µA	500µA
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 3A, 4V	1000 @ 3A, 4V	1000 @ 3A, 4V	750 @ 3A, 3V	1000 @ 3A, 3V
Power - Max	2 W	2 W	75 W	65 W	2 W
Package / Case	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Operating Temperature (TJ)	150°C	-65°C ~ 150°C	-65°C ~ 150°C	-65°C ~ 150°C	-65°C ~ 150°C
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Direct Substitute (Identical Specifications):

TIP102G (onsemi) is a direct substitute for TIP102 (STMicroelectronics). Both devices share identical electrical specifications including 8 A maximum collector current, 100 V breakdown voltage, 2.5 V Vce saturation at specified conditions, and 2 W maximum power dissipation. Both are ROHS3 compliant and housed in TO-220-3 packages. TIP102G provides extended operating temperature range (-65°C to 150°C) compared to the base TIP102 specification (150°C maximum). This part is suitable for direct pin-for-pin replacement in existing designs.

Similar Substitutes (Equivalent Core Function with Parameter Variations):

2N6045G (onsemi) meets critical matching parameters (100 V, 8 A, TO-220-3, NPN Darlington) but provides significantly higher power dissipation capability (75 W versus 2 W). This part is suitable for applications requiring enhanced thermal performance or higher power handling. Vce saturation is lower (2V @ 12mA, 3A) and collector cutoff current is lower (20µA), indicating improved switching characteristics.

BDX53CG (onsemi) meets critical matching parameters (100 V, 8 A, TO-220-3, NPN Darlington) with 65 W power dissipation. DC current gain is reduced to 750 @ 3A, 3V (versus 1000 minimum for TIP102). Collector cutoff current is elevated to 500µA. This part is suitable for applications where higher power dissipation is beneficial and the reduced current gain is acceptable.

TIP122G (onsemi) does not meet critical matching parameters. Maximum collector current is 5 A (versus 8 A required). This part is not suitable as a substitute for TIP102 in applications requiring 8 A operation.

All substitute parts maintain ROHS3 compliance and REACH unaffected status, consistent with the base TIP102 device.

Frequently Asked Questions (FAQ)

Q: Can TIP102G replace TIP102 in my circuit?

A: Yes. TIP102G is a direct substitute with identical electrical specifications and TO-220-3 package compatibility. Pin configuration is identical, and electrical performance is equivalent. TIP102G provides extended operating temperature range as an additional benefit.

Q: What is the difference between TIP102 and 2N6045G?

A: Both devices share the same critical electrical parameters (100 V, 8 A, NPN Darlington, TO-220-3 package). The primary difference is power dissipation: 2N6045G is rated for 75 W maximum power versus 2 W for TIP102. 2N6045G also exhibits lower Vce saturation voltage (2V versus 2.5V) and lower collector cutoff current (20µA versus 50µA). Selection between these parts depends on thermal requirements and switching performance needs of the application.

Q: Is BDX53CG a suitable replacement for TIP102?

A: BDX53CG meets the critical electrical parameters (100 V, 8 A, NPN Darlington, TO-220-3 package) and is mechanically compatible. However, DC current gain is reduced to 750 @ 3A, 3V (versus 1000 minimum for TIP102), and collector cutoff current is elevated to 500µA. BDX53CG is suitable only if the application can tolerate these parameter variations. The 65 W power rating provides enhanced thermal capability compared to TIP102.

Q: Why is TIP122G not listed as a direct substitute?

A: TIP122G has a maximum collector current rating of 5 A, which does not meet the 8 A requirement of TIP102. This is a critical parameter mismatch. TIP122G is not suitable for applications requiring 8 A operation.

Q: Are all substitute parts RoHS compliant?

A: Yes. All listed substitute parts (TIP102G, 2N6045G, BDX53CG, TIP122G) are ROHS3 compliant and REACH unaffected, consistent with the base TIP102 device.

Q: What is the difference between operating temperature specifications?

A: TIP102 (STMicroelectronics) specifies maximum junction temperature of 150°C. All onsemi substitute parts (TIP102G, 2N6045G, BDX53CG, TIP122G) specify operating temperature range of -65°C to 150°C. This extended range in substitute parts provides additional design margin for low-temperature operation.

Q: Can I use 2N6045G or BDX53CG in a 2 W power budget application?

A: Yes. Both 2N6045G (75 W) and BDX53CG (65 W) are rated for power dissipation well above 2 W and are suitable for applications with 2 W power budgets. The higher power ratings provide thermal margin and do not create incompatibility with lower power applications.

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