TIP101 Equivalent & Substitute Parts

Part Overview

The TIP101 is a Bipolar (BJT) Transistor NPN - Darlington configuration rated for 80 V collector-emitter breakdown voltage and 8 A maximum collector current. Manufactured by onsemi, this component is packaged in a Through Hole TO-220-3 case and is classified as Obsolete product status. The TIP101 is no longer in active production, making identification of equivalent substitute parts necessary for ongoing design support, maintenance, and new production applications requiring compatible NPN Darlington transistor functionality.

Substiute Parts

TIP101
onsemiIn Stock: 1211TIP101 Datasheet
TIP101
Current Part
BDX53B
STMicroelectronicsIn Stock: 7404BDX53B Datasheet
BDX53B
Similar
TIP102
STMicroelectronicsIn Stock: 23155TIP102 Datasheet
TIP102
Similar

Key Parameters

Parameter Value Unit
Transistor Type NPN - Darlington
Current - Collector (Ic) (Max) 8 A
Voltage - Collector Emitter Breakdown (Max) 80 V
Power - Max 2 W
Mounting Type Through Hole
Package / Case TO-220-3
Operating Temperature (TJ) -65 to 150 °C

Substitute Part Grouping Explanation

Substitution of the TIP101 is determined by strict equivalence across the following electrical and mechanical parameters:

Primary Substitution Criteria:

  • Transistor Type: NPN - Darlington configuration
  • Current - Collector (Ic) (Max): 8 A minimum
  • Voltage - Collector Emitter Breakdown (Max): 80 V minimum
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3

Substitution Logic: Parts are classified as direct substitutes when they meet or exceed the primary electrical ratings (collector current and breakdown voltage) while maintaining identical mechanical packaging and mounting configuration. Parts that exceed the maximum power rating or operating temperature range are acceptable substitutes provided all other parameters remain compatible.

The BDX53B meets all primary criteria with identical 8 A collector current and 80 V breakdown voltage ratings, though it provides enhanced power dissipation capability (60 W versus 2 W). The TIP102 exceeds the voltage rating at 100 V while maintaining 8 A collector current and identical power rating, making it suitable for applications with higher voltage headroom requirements.

Parameter Comparison

Parameter TIP101 (onsemi) BDX53B (STMicroelectronics) TIP102 (STMicroelectronics)
Transistor Type NPN - Darlington NPN - Darlington NPN - Darlington
Current - Collector (Ic) (Max) 8 A 8 A 8 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 100 V
Vce Saturation (Max) @ Ib, Ic 2.5V @ 80mA, 8A 2V @ 12mA, 3A 2.5V @ 80mA, 8A
Current - Collector Cutoff (Max) 50µA 500µA 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 3A, 4V 750 @ 3A, 3V 1000 @ 3A, 4V
Power - Max 2 W 60 W 2 W
Operating Temperature (TJ) -65 to 150°C 150°C 150°C
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3
Product Status Obsolete Active Active
RoHS Status RoHS non-compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

BDX53B (STMicroelectronics): The BDX53B is a direct electrical equivalent to the TIP101, matching the 8 A collector current and 80 V breakdown voltage specifications. This substitute is classified as Active product status with ROHS3 compliance, providing long-term availability and regulatory alignment. The BDX53B offers superior power dissipation capability (60 W versus 2 W), enabling use in higher thermal load applications. Selection of BDX53B is appropriate for applications requiring direct replacement with enhanced thermal performance and modern compliance certifications.

TIP102 (STMicroelectronics): The TIP102 maintains the 8 A collector current and 2 W power rating of the TIP101 while providing an elevated breakdown voltage rating of 100 V. This substitute is classified as Active product status with ROHS3 compliance. The TIP102 is suitable for applications where higher voltage margin is required or where circuit design permits operation at the elevated voltage specification. Direct pin-for-pin compatibility is maintained through identical TO-220-3 packaging.

Both substitute parts are manufactured by STMicroelectronics, an established semiconductor supplier, and carry ROHS3 compliance certification, addressing regulatory requirements absent in the obsolete TIP101.

Frequently Asked Questions (FAQ)

Q: Can the BDX53B directly replace the TIP101 in existing circuit designs?

A: Yes. The BDX53B maintains electrical equivalence across all primary parameters: 8 A collector current, 80 V breakdown voltage, and identical TO-220-3 Through Hole packaging. Pin configuration is identical, enabling direct substitution without circuit modification.

Q: What is the primary difference between the BDX53B and TIP102 substitutes?

A: The BDX53B matches the TIP101 breakdown voltage specification at 80 V and provides significantly enhanced power dissipation (60 W versus 2 W). The TIP102 increases the breakdown voltage to 100 V while maintaining the 2 W power rating. Selection depends on thermal requirements and voltage margin specifications of the target application.

Q: Are the substitute parts available in the same packaging as the TIP101?

A: Yes. Both BDX53B and TIP102 are packaged in TO-220-3 Through Hole configuration, identical to the TIP101. Mechanical mounting and thermal interface characteristics remain consistent across all three parts.

Q: Does the higher power rating of the BDX53B affect circuit compatibility?

A: No. The BDX53B's 60 W power rating represents an enhanced capability that does not degrade compatibility. Applications designed for the TIP101's 2 W rating operate within the BDX53B's specifications. The higher power rating provides additional thermal margin in applications approaching the original 2 W limit.

Q: What compliance advantages do the substitute parts offer?

A: Both BDX53B and TIP102 carry ROHS3 compliance certification, whereas the TIP101 is classified as RoHS non-compliant. This compliance status is relevant for applications subject to regulatory requirements in electronics manufacturing and end-use markets.

Q: Are there differences in DC current gain between the substitutes and the TIP101?

A: The BDX53B specifies a minimum DC current gain (hFE) of 750 @ 3A, 3V, compared to the TIP101's 1000 @ 3A, 4V. The TIP102 matches the TIP101 at 1000 @ 3A, 4V. Applications with specific current gain requirements should reference the detailed specifications of the selected substitute.

Q: What is the collector cutoff current specification difference between BDX53B and the other parts?

A: The BDX53B specifies a maximum collector cutoff current of 500µA, whereas both the TIP101 and TIP102 specify 50µA. This parameter affects leakage characteristics in off-state operation and should be evaluated for applications with stringent leakage requirements.

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