TIL117TM Equivalent & Substitute Parts

Part Overview

The TIL117TM is an optoisolator transistor with base output manufactured by onsemi, featuring 7500Vpk isolation voltage in a 6-DIP through-hole package. This component is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and production continuity. The TIL117TM provides single-channel isolation with transistor output configuration suitable for DC input applications requiring galvanic isolation in industrial and consumer electronics.

Substiute Parts

TIL117TM

onsemiIn Stock: 1155TIL117TM Datasheet

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4N29M

Fairchild SemiconductorIn Stock: 162094N29M Datasheet

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H11A2M

onsemiIn Stock: 12552H11A2M Datasheet

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H11A3M

Fairchild SemiconductorIn Stock: 12690H11A3M Datasheet

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H11A4M

onsemiIn Stock: 12682H11A4M Datasheet

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H11A5M

Fairchild SemiconductorIn Stock: 12202H11A5M Datasheet

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TIL117G

Isocom Components 2004 LTDIn Stock: 753TIL117G Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution for the TIL117TM is determined by the following critical parameters:

• Isolation Voltage: Minimum 7500Vpk or equivalent RMS rating
• Output Configuration: Transistor with base output
• Package Type: 6-DIP through-hole mounting
• Number of Channels: Single channel
• Input Type: DC
• Operating Temperature Range: Must encompass or exceed -40°C to 100°C
• Current Transfer Ratio: Minimum 50% @ 10mA preferred for direct replacement

Substitute parts are grouped into two categories: direct equivalents (matching isolation voltage and CTR specifications) and functional alternatives (meeting isolation and output type requirements with acceptable parameter variations).

Parameter Comparison

Engineering Selection Recommendations

Primary Substitute: TIL117G

TIL117G is the preferred substitute for TIL117TM applications. Both parts share identical isolation voltage (7500Vpk), current transfer ratio (50% @ 10mA), output voltage rating (30V), and Vce saturation (400mV). TIL117G maintains active product status with RoHS3 compliance and REACH unaffected certification, ensuring long-term availability and regulatory alignment. Package dimensions are identical (6-DIP 0.400", 10.16mm), enabling direct board-level replacement without layout modification.

Secondary Substitutes: H11A3M and H11A5M

H11A3M and H11A5M are functional alternatives for applications where isolation voltage can be reduced to 5000Vrms. Both parts feature transistor with base output and 6-DIP through-hole packaging compatible with TIL117TM footprints. H11A5M offers superior current transfer ratio (30% @ 10mA) compared to H11A3M (20% @ 10mA), providing better signal integrity. Both parts support extended operating temperature range (-55°C to 110°C) and carry RoHS3 compliance. These substitutes are suitable when circuit design permits lower isolation voltage specifications.

Alternative: 4N29M

4N29M provides active product status and high current transfer ratio (100% @ 10mA) but features Darlington output configuration instead of standard transistor output. Isolation voltage is reduced to 5000Vrms, and Vce saturation is elevated to 1V. This part is applicable only when circuit topology accommodates Darlington characteristics and lower isolation voltage requirements.

Not Recommended: H11A4M

H11A4M exhibits reduced current transfer ratio (10% @ 10mA) and features non-standard 6-DIP package dimensions (0.300", 7.62mm), creating potential board compatibility issues. This part should be avoided for direct TIL117TM replacement.

Frequently Asked Questions (FAQ)

Q: Can TIL117G directly replace TIL117TM without circuit modification?

A: Yes. TIL117G matches all critical electrical parameters (7500Vpk isolation, 50% CTR @ 10mA, 30V output, 400mV Vce saturation) and package dimensions (6-DIP 0.400", 10.16mm). Direct board-level substitution is possible without design changes.

Q: What is the key difference between TIL117TM and H11A3M?

A: Isolation voltage differs significantly. TIL117TM provides 7500Vpk isolation, while H11A3M provides 5000Vrms isolation. Current transfer ratio is also lower in H11A3M (20% @ 10mA versus 50% @ 10mA). H11A3M is suitable only when circuit design permits reduced isolation voltage.

Q: Why is 4N29M not recommended as a direct substitute?

A: 4N29M uses Darlington output configuration instead of standard transistor output, resulting in higher Vce saturation (1V versus 400mV). This affects switching characteristics and may require circuit redesign. Additionally, isolation voltage is reduced to 5000Vrms.

Q: Are all substitute parts available in the same package?

A: Most substitutes use 6-DIP through-hole packaging compatible with TIL117TM. Exception: H11A4M uses 6-DIP (0.300", 7.62mm) instead of standard 0.400" spacing, creating potential board compatibility issues.

Q: Which substitute offers the best long-term availability?

A: TIL117G and 4N29M maintain active product status, ensuring continued manufacturing and supply chain availability. Other substitutes are classified as obsolete but currently have inventory in stock.

Q: Can H11A2M be used as a substitute?

A: H11A2M is a surface-mount variant (6-SMD) of the H11A series and is not compatible with through-hole TIL117TM applications. Board-level redesign would be required for implementation.