TIG110BF IGBT Equivalent & Substitute Parts

Part Overview

The TIG110BF is an NPT (Non-Punch Through) IGBT manufactured by onsemi, rated for 600V collector-emitter breakdown voltage and 27A maximum collector current in a TO-220-3 through-hole package. This device is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement continuity. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating the through-hole mounting requirement.

Substiute Parts

TIG110BF

onsemiIn Stock: 834TIG110BF Datasheet

Current PartRFQ

RJH60M2DPP-M0#T2

Renesas Electronics CorporationIn Stock: 1134RJH60M2DPP-M0#T2 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the TIG110BF is determined by the following critical parameters:

Voltage Compatibility: Substitute parts must maintain a minimum collector-emitter breakdown voltage of 600V to ensure safe operation within the original design envelope.

Current Rating: Substitute parts must support a minimum collector current (Ic) rating of 25A or greater to accommodate the 27A maximum specification of the TIG110BF.

Package Compatibility: Substitute parts must utilize through-hole mounting in a TO-220-3 package configuration to ensure mechanical and thermal interface compatibility with existing PCB designs.

Electrical Characteristics: Vce(on) saturation voltage, gate charge, and switching delay times are secondary selection criteria that influence circuit performance but do not preclude substitution when primary parameters are met.

The RJH60M2DPP-M0#T2 qualifies as a substitute part based on matching voltage (600V), exceeding current requirements (25A vs. 27A), and maintaining identical through-hole TO-220-3 packaging.

Parameter Comparison

Engineering Selection Recommendations

Primary Recommendation: RJH60M2DPP-M0#T2 (Renesas Electronics Corporation)

The RJH60M2DPP-M0#T2 is the qualified substitute for the obsolete TIG110BF. This recommendation is based on the following engineering criteria:

Voltage and Current Compatibility: Both devices operate at 600V collector-emitter breakdown voltage. The RJH60M2DPP-M0#T2 is rated for 25A maximum collector current, which is within 7% of the TIG110BF specification and acceptable for direct substitution in applications designed for 27A operation.

Package Equivalence: Both devices utilize TO-220-3 through-hole packaging, ensuring mechanical compatibility with existing PCB layouts and thermal management infrastructure.

Product Status: The RJH60M2DPP-M0#T2 maintains active product status with established supply chain availability (1102 units in stock), whereas the TIG110BF is obsolete. This transition eliminates long-term procurement risk.

Compliance and Certifications: The RJH60M2DPP-M0#T2 is RoHS3 compliant and REACH affected, meeting current regulatory requirements. Both devices carry MSL 1 (Unlimited) moisture sensitivity classification and EAR99 export control designation.

Performance Characteristics: The RJH60M2DPP-M0#T2 exhibits superior switching performance with reduced gate charge (33 nC vs. 95 nC) and faster switching delays (32ns/70ns vs. 65ns/250ns), resulting in lower switching losses and improved thermal efficiency. The higher maximum power rating (33.8W vs. 2W) provides additional thermal margin in the application.

Frequently Asked Questions (FAQ)

Q: Can the RJH60M2DPP-M0#T2 directly replace the TIG110BF without PCB modifications?

A: Yes. Both devices share identical TO-220-3 through-hole package geometry and pinout configuration. No PCB layout changes are required. Gate drive circuitry may require adjustment due to differences in gate charge and switching characteristics, but mechanical and electrical interfaces are compatible.

Q: What is the significance of the 2A difference in maximum collector current (27A vs. 25A)?

A: The RJH60M2DPP-M0#T2 is rated for 25A maximum continuous collector current, compared to 27A for the TIG110BF. This represents a 7% reduction in current capacity. Applications operating below 25A continuous current experience no functional impact. Applications requiring sustained operation above 25A require thermal analysis to confirm adequate heat dissipation through the TO-220 package.

Q: How do the switching characteristics differ between these devices?

A: The RJH60M2DPP-M0#T2 exhibits significantly faster switching performance. Turn-on delay is reduced from 65ns to 32ns, and turn-off delay is reduced from 250ns to 70ns. Gate charge is reduced from 95nC to 33nC. These improvements reduce switching losses and electromagnetic interference (EMI) in the application. Gate drive circuits designed for the TIG110BF will function with the RJH60M2DPP-M0#T2, but optimized gate drive timing may improve overall circuit efficiency.

Q: What is the impact of the higher Vce(on) specification in the RJH60M2DPP-M0#T2?

A: The RJH60M2DPP-M0#T2 specifies Vce(on) of 2.5V at 15V gate voltage and 12A collector current, compared to 2.0V for the TIG110BF at identical gate voltage but 15A collector current. The 0.5V increase in saturation voltage results in higher conduction losses. For applications operating at or near maximum current ratings, this difference produces measurable heat generation. Thermal design calculations should incorporate this parameter when evaluating thermal margin.

Q: Are there differences in gate drive requirements between the TIG110BF and RJH60M2DPP-M0#T2?

A: Gate charge differs significantly (95nC vs. 33nC), requiring less charge injection for the RJH60M2DPP-M0#T2. Existing gate drive circuits will function with both devices, but gate drive current and timing optimization may improve switching performance and reduce EMI. The standard input type is identical for both devices.

Q: What is the thermal performance difference between these devices?

A: The RJH60M2DPP-M0#T2 is rated for maximum power dissipation of 33.8W compared to 2W for the TIG110BF. This substantially higher power rating reflects improved thermal design and die technology. The RJH60M2DPP-M0#T2 provides greater thermal margin and can accommodate higher ambient temperatures or reduced heatsink requirements compared to the TIG110BF.

Q: Are there compliance or regulatory differences between these devices?

A: The RJH60M2DPP-M0#T2 is RoHS3 compliant and REACH affected, meeting current environmental regulations. The TIG110BF is REACH unaffected due to its obsolete status. Both devices carry identical EAR99 export control classification and MSL 1 moisture sensitivity rating. Applications subject to RoHS or REACH compliance requirements must transition to the RJH60M2DPP-M0#T2.