TF414T5G JFET N-Channel Equivalent & Substitute Parts

Part Overview

The TF414T5G is a JFET N-Channel transistor manufactured by onsemi, rated for 40 V drain-to-source voltage with 1 mA maximum drain current in a surface mount SOT-883 (XDFN3) package. This device is classified as obsolete, making identification of functionally compatible alternatives essential for ongoing design support and production continuity. The compact 1x0.6 mm form factor and 100 mW power rating position this component for low-power signal switching and amplification applications.

Substiute Parts

TF414T5G

onsemiIn Stock: 1209TF414T5G Datasheet

Current PartRFQ

TF412ST5G

onsemiIn Stock: 75795TF412ST5G Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the TF414T5G is determined by the following critical parameters:

Mandatory Compatibility Criteria:

• FET Type: N-Channel (required match)
• Package / Case: 3-XFDFN SOT-883 (required match for PCB layout compatibility)
• Mounting Type: Surface Mount (required match)
• Power Rating: Minimum 100 mW (equal or greater)
• Operating Temperature: Minimum 150°C TJ (equal or greater)
• RoHS Compliance: ROHS3 Compliant (required match)

Electrical Parameter Flexibility:

• Drain to Source Voltage (Vdss): Substitute must equal or exceed 40 V
• Maximum Drain Current (Id): Substitute must equal or exceed 1 mA
• Thermal and compliance ratings must meet or exceed the original specification

The TF412ST5G qualifies as a direct substitute based on identical package geometry, mounting type, power rating, temperature rating, and RoHS compliance status. Although the TF412ST5G operates at reduced voltage (30 V Vdss) and elevated current (10 mA Id), these parameters remain within acceptable substitution boundaries for applications not requiring the full 40 V rating of the original device.

Parameter Comparison

Engineering Selection Recommendations

TF412ST5G as Primary Substitute:

The TF412ST5G is the qualified substitute for the obsolete TF414T5G. Both devices share identical package geometry (SOT-883 XDFN3 1x0.6), mounting type (surface mount), power dissipation rating (100 mW), and maximum operating temperature (150°C TJ). Both maintain ROHS3 compliance, MSL Level 1 (unlimited moisture sensitivity), and REACH unaffected status.

The TF412ST5G carries active product status from onsemi, ensuring continued availability and supply chain stability compared to the obsolete TF414T5G. Inventory availability of 75,755 units supports production requirements.

Voltage and Current Trade-offs:

Applications operating at or below 30 V drain-to-source voltage can directly substitute the TF412ST5G without circuit modification. Designs requiring the full 40 V rating of the TF414T5G must evaluate alternative N-Channel JFET devices in the same package family or consider circuit redesign to accommodate the reduced voltage specification.

The TF412ST5G exhibits higher maximum drain current (10 mA versus 1 mA), which does not restrict substitution in current-limited applications but may require thermal analysis in high-dissipation scenarios.

Frequently Asked Questions (FAQ)

Q: Can the TF412ST5G directly replace the TF414T5G in all applications?

A: Direct substitution is valid for applications where the circuit operates at 30 V drain-to-source voltage or lower. If your design requires the full 40 V rating of the TF414T5G, the TF412ST5G is not suitable without circuit modification.

Q: Are the package dimensions identical between these devices?

A: Yes. Both devices use the SOT-883 (XDFN3) package with 1x0.6 mm dimensions. PCB footprints are identical, and no layout changes are required for physical substitution.

Q: What is the impact of the higher drain current rating on the TF412ST5G?

A: The TF412ST5G maximum drain current of 10 mA exceeds the TF414T5G specification of 1 mA. This does not prevent substitution in applications drawing 1 mA or less. Thermal performance remains equivalent at the 100 mW power rating for both devices.

Q: Are compliance certifications equivalent?

A: Yes. Both devices are ROHS3 compliant, carry MSL Level 1 (unlimited), and maintain REACH unaffected status. Regulatory and environmental compliance requirements are satisfied by either device.

Q: What is the significance of the TF414T5G obsolete status?

A: The obsolete classification indicates onsemi has discontinued production. The TF412ST5G active status ensures ongoing manufacturing and supply availability, making it the preferred long-term solution for design continuity.

Q: How do the electrical characteristics differ, and does this affect circuit performance?

A: The TF412ST5G exhibits higher gate-drain leakage current (Idss: 1.2 mA versus 50 µA) and lower gate cutoff voltage (180 mV versus 4 V). These differences may affect biasing and switching characteristics in precision applications. Circuit simulation or prototype testing is recommended for designs sensitive to these parameters.