SUD08P06-155L-E3 Equivalent & Substitute Parts

Part Overview

The SUD08P06-155L-E3 is a P-Channel 60V 8.4A MOSFET manufactured by Vishay Siliconix in the TrenchFET® series, housed in a TO-252AA surface mount package. This device is classified as obsolete, necessitating identification of active equivalent and substitute components for ongoing design support and procurement continuity. The part delivers 2W (Ta) and 25W (Tc) power dissipation with an on-resistance of 155mOhm at specified conditions, suitable for switching applications requiring moderate current handling in a compact form factor.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	8.4	A (Tc)
On-Resistance (Rds On) @ 5A, 10V	155	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	3	V
Gate Charge (Qg) @ 10V	19	nC
Input Capacitance (Ciss) @ 25V	450	pF
Power Dissipation (Max)	2W (Ta), 25W (Tc)	W
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-252-3, DPAK	—
Mounting Type	Surface Mount	—
FET Type	P-Channel	—
Technology	MOSFET (Metal Oxide)	—
RoHS Status	ROHS3 Compliant	—
MSL Rating	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the SUD08P06-155L-E3 is determined by strict alignment of the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): 60V (exact match required)
FET Type: P-Channel (exact match required)
Technology: MOSFET (Metal Oxide) (exact match required)
Package/Case: TO-252-3, DPAK (exact match required)
Mounting Type: Surface Mount (exact match required)

Secondary Compatibility Parameters:

Continuous Drain Current (Id): 8.4A or higher acceptable
On-Resistance (Rds On): 155mOhm or lower acceptable
Gate Threshold Voltage (Vgs(th)): Within ±1V of 3V acceptable
Operating Temperature Range: Must include -55°C to 175°C or equivalent industrial range
RoHS Compliance: ROHS3 Compliant (required)
MSL Rating: 1 (Unlimited) preferred

Substitute parts are grouped into two categories: Direct Equivalents (identical electrical specifications and packaging) and Functional Substitutes (compatible electrical parameters with potential performance improvements).

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Vgs(th) (V)	Qg (nC)	Ciss (pF)	Power Diss. (W)	Temp Range (°C)	Status
SUD08P06-155L-E3	Vishay Siliconix	60	8.4 (Tc)	155 @ 5A, 10V	3 @ 250µA	19 @ 10V	450 @ 25V	2 (Ta), 25 (Tc)	-55 to 175	Obsolete
SUD08P06-155L-GE3	Vishay Siliconix	60	8.4 (Tc)	155 @ 5A, 10V	3 @ 250µA	19 @ 10V	450 @ 25V	1.7 (Ta), 20.8 (Tc)	-55 to 150	Active
FQD11P06TM	onsemi	60	9.4 (Tc)	185 @ 4.7A, 10V	4 @ 250µA	17 @ 10V	550 @ 25V	2.5 (Ta), 38 (Tc)	-55 to 150	Active
FQD17P06TM	onsemi	60	12 (Tc)	135 @ 6A, 10V	4 @ 250µA	27 @ 10V	900 @ 25V	2.5 (Ta), 44 (Tc)	-55 to 150	Active
NTD20P06LT4G	onsemi	60	15.5 (Ta)	150 @ 7.5A, 5V	2 @ 250µA	26 @ 5V	1190 @ 25V	65 (Tc)	-55 to 175	Active
SPD08P06PGBTMA1	Infineon Technologies	60	8.83 (Ta)	300 @ 10A, 6.2V	4 @ 250µA	13 @ 10V	420 @ 25V	42 (Tc)	-55 to 175	Active
STD10P6F6	STMicroelectronics	60	10 (Tc)	160 @ 5A, 10V	4 @ 250µA	6.4 @ 10V	340 @ 48V	35 (Tc)	-55 to 175	Active
SVD2955T4G	onsemi	60	12 (Ta)	180 @ 6A, 10V	4 @ 250µA	30 @ 10V	750 @ 25V	55 (Tj)	-55 to 175	Active

Engineering Selection Recommendations

Direct Equivalent (Preferred for Pin-Compatible Replacement):

SUD08P06-155L-GE3 is the direct equivalent of the obsolete SUD08P06-155L-E3. Both are manufactured by Vishay Siliconix in the TrenchFET® series with identical electrical specifications (60V, 8.4A, 155mOhm Rds On). The GE3 variant is currently active and available in high inventory (23,300 pcs). The primary difference is reduced power dissipation at ambient temperature (1.7W vs. 2W) and a slightly lower maximum junction temperature (150°C vs. 175°C). This part is ROHS3 compliant with MSL 1 rating and is suitable for direct substitution in existing designs.

Functional Substitutes (Performance Enhancement Options):

For applications where higher current capacity or improved thermal performance is beneficial:

FQD17P06TM (onsemi): Provides 12A continuous drain current with superior on-resistance (135mOhm), higher power dissipation capability (44W Tc), and extended temperature range to 175°C. Suitable for designs requiring increased current headroom.
NTD20P06LT4G (onsemi): Delivers 15.5A continuous drain current with excellent on-resistance (150mOhm) and maximum power dissipation of 65W (Tc). Maintains -55°C to 175°C operating range. Recommended for high-current switching applications.
STD10P6F6 (STMicroelectronics): Offers 10A continuous drain current with comparable on-resistance (160mOhm) and 35W power dissipation. Features DeepGATE™ and STripFET™ VI technology. Maintains full -55°C to 175°C temperature range.
SVD2955T4G (onsemi): Provides 12A continuous drain current with 55W power dissipation and AEC-Q101 automotive qualification. Suitable for automotive-grade applications requiring enhanced reliability.

All substitute parts maintain 60V Vdss rating, P-Channel configuration, MOSFET technology, TO-252-3 DPAK package, surface mount mounting, ROHS3 compliance, and MSL 1 rating.

Frequently Asked Questions (FAQ)

Q: Can SUD08P06-155L-GE3 be used as a direct replacement for SUD08P06-155L-E3?

A: Yes. Both parts are manufactured by Vishay Siliconix with identical electrical specifications (60V, 8.4A, 155mOhm Rds On) and package type (TO-252-3 DPAK). The GE3 is the active production equivalent of the obsolete E3 variant. The only differences are reduced power dissipation at ambient temperature and a 25°C lower maximum junction temperature, which are not limiting factors in most applications.

Q: What is the key difference between the substitute parts listed?

A: Substitute parts differ primarily in continuous drain current capacity and on-resistance. The SUD08P06-155L-E3 is rated at 8.4A with 155mOhm Rds On. Substitutes range from FQD11P06TM (9.4A, 185mOhm) to NTD20P06LT4G (15.5A, 150mOhm). Selection depends on application current requirements and thermal constraints.

Q: Are all substitute parts available in the same package?

A: Yes. All listed substitute parts use TO-252-3 DPAK surface mount package with identical pinout and footprint compatibility. This ensures mechanical interchangeability on PCBs designed for the original SUD08P06-155L-E3.

Q: Which substitute part offers the best on-resistance performance?

A: FQD17P06TM provides the lowest on-resistance at 135mOhm (measured at 6A, 10V), followed by NTD20P06LT4G at 150mOhm (measured at 7.5A, 5V). Lower on-resistance reduces power dissipation and heat generation in switching applications.

Q: Do all substitute parts meet RoHS3 compliance?

A: Yes. All listed substitute parts are ROHS3 compliant with MSL 1 (Unlimited) moisture sensitivity rating, matching the compliance profile of the original SUD08P06-155L-E3.

Q: What is the operating temperature range consideration for substitution?

A: The original SUD08P06-155L-E3 operates from -55°C to 175°C. The direct equivalent SUD08P06-155L-GE3 operates to 150°C. Most onsemi substitutes (FQD11P06TM, FQD17P06TM) are limited to 150°C, while NTD20P06LT4G, SPD08P06PGBTMA1, STD10P6F6, and SVD2955T4G maintain the full -55°C to 175°C range. For applications requiring extended high-temperature operation, select parts with 175°C maximum junction temperature.

Q: Is automotive qualification available in substitute parts?

A: Yes. SVD2955T4G carries AEC-Q101 automotive qualification, making it suitable for automotive-grade applications requiring enhanced reliability and traceability standards.

Q: How does gate charge (Qg) affect substitution suitability?

A: Gate charge determines gate drive requirements and switching speed. The original part has 19nC at 10V. Substitutes range from 6.4nC (STD10P6F6) to 30nC (SVD2955T4G). Lower gate charge enables faster switching with reduced driver power consumption. Higher gate charge may require stronger gate drive circuits but is not incompatible if adequate drive capability exists.

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