STWA48N60DM2 Equivalent & Substitute Parts

Part Overview

The STWA48N60DM2 is an N-Channel 600V 40A MOSFET manufactured by STMicroelectronics in the MDmesh™ DM2 series. This device is packaged in TO-247 with long leads for through-hole mounting and is rated for 300W power dissipation at case temperature. The part is Active status and RoHS3 compliant. Equivalent and substitute parts are identified based on matching or exceeding critical electrical parameters including drain-source voltage rating, continuous drain current, on-resistance characteristics, and thermal performance within the same TO-247-3 package family.

Substiute Parts

STWA48N60DM2
STMicroelectronicsIn Stock: 1946STWA48N60DM2 Datasheet
STWA48N60DM2
Current Part
STW48N60DM2
STMicroelectronicsIn Stock: 5200STW48N60DM2 Datasheet
STW48N60DM2
Parametric Equivalent
APT47N60BC3G
Microchip TechnologyIn Stock: 1799APT47N60BC3G Datasheet
APT47N60BC3G
Similar
FCH072N60
onsemiIn Stock: 1906FCH072N60 Datasheet
FCH072N60
Similar
FCH47N60-F133
onsemiIn Stock: 3487FCH47N60-F133 Datasheet
FCH47N60-F133
Similar
SPW55N80C3FKSA1
Infineon TechnologiesIn Stock: 3280SPW55N80C3FKSA1 Datasheet
SPW55N80C3FKSA1
Similar
TK35N65W,S1F
Toshiba Semiconductor and StorageIn Stock: 1247TK35N65W,S1F Datasheet
TK35N65W,S1F
Similar
TK39N60W5,S1VF
Toshiba Semiconductor and StorageIn Stock: 6052TK39N60W5,S1VF Datasheet
TK39N60W5,S1VF
Similar

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 600 V
Continuous Drain Current (Id) @ 25°C 40 A (Tc)
Rds On (Max) @ 20A, 10V 79 mOhm
Gate Charge (Qg) @ 10V 70 nC
Power Dissipation (Max) 300 W (Tc)
Operating Temperature Range -55 to 150 °C (TJ)
Package Type TO-247-3 Through Hole
Vgs (Max) ±25 V
Input Capacitance (Ciss) @ 100V 3250 pF

Substitute Part Grouping Explanation

Substitute parts for the STWA48N60DM2 are classified into two categories based on parametric alignment:

Parametric Equivalent: Parts that match all critical electrical specifications including Vdss (600V), Id (40A), Rds On (79mOhm @ 20A, 10V), and power dissipation (300W). These parts are direct functional replacements with identical performance characteristics.

Similar Parts: Parts that share the same voltage rating (600V) and package (TO-247-3) but differ in one or more of the following parameters: continuous drain current, on-resistance, gate charge, or power dissipation. These parts are suitable for applications where the higher current rating or improved thermal performance provides design margin, provided the application circuit can accommodate the different electrical characteristics.

Key substitution criteria:

  • Drain-Source Voltage (Vdss): Must equal or exceed 600V
  • Package Type: Must be TO-247-3 or compatible through-hole variant
  • Continuous Drain Current (Id): Must meet or exceed 40A
  • Operating Temperature Range: Must support -55°C to 150°C
  • RoHS3 Compliance: Required for regulatory compatibility

Parameter Comparison

Part Number Manufacturer Vdss (V) Id @ 25°C (A) Rds On (mOhm) Qg (nC) Power Diss. (W) Package Status
STWA48N60DM2 STMicroelectronics 600 40 79 @ 20A 70 300 TO-247-3 Active
STW48N60DM2 STMicroelectronics 600 40 79 @ 20A 70 300 TO-247-3 Active
APT47N60BC3G Microchip Technology 600 47 70 @ 30A 260 417 TO-247-3 Active
FCH072N60 onsemi 600 52 72 @ 26A 125 481 TO-247-3 Not For New Designs
FCH47N60-F133 onsemi 600 47 70 @ 23.5A 270 417 TO-247-3 Not For New Designs
SPW55N80C3FKSA1 Infineon Technologies 800 54.9 85 @ 32.6A 288 500 TO-247-3 Active
TK35N65W,S1F Toshiba Semiconductor and Storage 650 35 80 @ 17.5A 100 270 TO-247-3 Active
TK39N60W5,S1VF Toshiba Semiconductor and Storage 600 38.8 74 @ 19.4A 135 270 TO-247-3 Active

Engineering Selection Recommendations

Parametric Equivalent (Direct Replacement):

STW48N60DM2 is the parametric equivalent to STWA48N60DM2. Both parts are manufactured by STMicroelectronics, share identical electrical specifications, and are Active status. This part provides direct functional substitution with no design modifications required.

Active Status Alternatives (Higher Performance Margin):

APT47N60BC3G (Microchip Technology) and SPW55N80C3FKSA1 (Infineon Technologies) are Active status parts that exceed the STWA48N60DM2 specifications. APT47N60BC3G provides 47A continuous current with improved on-resistance (70mOhm) and higher power dissipation (417W). SPW55N80C3FKSA1 offers 800V voltage rating with 54.9A current capability and 500W power dissipation, suitable for applications requiring additional voltage margin. Both are RoHS3 compliant and support the full operating temperature range.

Legacy Status Alternatives (Discontinuation Risk):

FCH072N60 and FCH47N60-F133 (onsemi) are marked "Not For New Designs." These parts exceed STWA48N60DM2 performance specifications but carry discontinuation risk. Use only in applications where Active status alternatives are unsuitable or where existing inventory must be managed.

Marginal Alternatives (Current Derating):

TK39N60W5,S1VF (Toshiba) provides 38.8A continuous current, slightly below the 40A requirement. TK35N65W,S1F (Toshiba) provides 35A continuous current with 650V rating. These parts are suitable only for applications where the specified 40A continuous current is not a hard requirement or where thermal derating is acceptable.

Frequently Asked Questions (FAQ)

Q: Can STW48N60DM2 be used as a direct replacement for STWA48N60DM2?

A: Yes. STW48N60DM2 is a parametric equivalent with identical electrical specifications, same manufacturer (STMicroelectronics), same package (TO-247-3), and Active product status. No circuit modifications are required.

Q: What is the difference between STWA48N60DM2 and APT47N60BC3G?

A: APT47N60BC3G is manufactured by Microchip Technology and provides higher performance: 47A continuous current versus 40A, lower on-resistance (70mOhm versus 79mOhm), and higher power dissipation (417W versus 300W). Both share 600V Vdss rating and TO-247-3 package. APT47N60BC3G is suitable for applications requiring additional thermal margin or higher current capacity.

Q: Why are FCH072N60 and FCH47N60-F133 marked "Not For New Designs"?

A: These onsemi parts are legacy products in discontinuation phase. While they meet or exceed STWA48N60DM2 electrical specifications, they should not be selected for new circuit designs. Use Active status alternatives (APT47N60BC3G, SPW55N80C3FKSA1, or STW48N60DM2) for new applications.

Q: Can SPW55N80C3FKSA1 replace STWA48N60DM2 in a 600V application?

A: SPW55N80C3FKSA1 has an 800V Vdss rating, which exceeds the 600V requirement. The part is electrically compatible and provides superior performance (54.9A, 500W). However, the higher voltage rating may introduce unnecessary cost. Use SPW55N80C3FKSA1 only when 800V capability is required or when the application benefits from the higher current and power dissipation ratings.

Q: Are all substitute parts RoHS3 compliant?

A: All listed substitute parts are RoHS3 compliant except where MSL (Moisture Sensitivity Level) is listed as "Not Applicable" (FCH072N60, FCH47N60-F133). Verify compliance documentation for your specific application requirements.

Q: What is the significance of the TO-247-3 package designation?

A: TO-247-3 is a standardized through-hole package with three leads (Gate, Drain, Source). All substitute parts use this package family, ensuring mechanical and thermal compatibility with existing PCB layouts and heatsink mounting. Verify lead length specifications if using long-lead variants.

Q: Can Toshiba parts (TK39N60W5,S1VF, TK35N65W,S1F) be used as direct replacements?

A: TK39N60W5,S1VF provides 38.8A continuous current, slightly below the 40A specification. TK35N65W,S1F provides only 35A. Both are suitable only for applications where the 40A continuous current specification is not a hard design requirement or where thermal derating is acceptable. For applications requiring full 40A capability, use STW48N60DM2, APT47N60BC3G, or FCH072N60.

Q: What parameters should be verified when substituting parts?

A: Verify the following parameters match or exceed application requirements: (1) Drain-Source Voltage (Vdss) must equal or exceed 600V, (2) Continuous Drain Current (Id) must meet or exceed 40A at 25°C, (3) On-resistance (Rds On) must not exceed application thermal budget, (4) Package type must be TO-247-3 or compatible variant, (5) Operating temperature range must support -55°C to 150°C, (6) Gate charge (Qg) must be compatible with driver circuit specifications.

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