STW9N150 Equivalent & Substitute Parts

Part Overview

The STW9N150 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 1500V drain-to-source voltage with 8A continuous drain current at 25°C. This device is housed in a TO-247-3 through-hole package and is part of the PowerMESH™ series. The part is currently in active production status with 4385 units in stock.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges, allowing for component interchangeability in circuit designs where the primary electrical characteristics remain within acceptable tolerances.

Substiute Parts

STW9N150

STMicroelectronicsIn Stock: 4417STW9N150 Datasheet

Current PartRFQ

2SK1835-E

Renesas Electronics CorporationIn Stock: 325302SK1835-E Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the STW9N150 is determined by the following critical parameters:

Primary Electrical Criteria:

• Drain-to-Source Voltage (Vdss) must equal or exceed 1500V
• Continuous Drain Current (Id) must support the application requirements
• On-state resistance (Rds On) must be compatible with thermal and efficiency constraints
• Power dissipation capability must accommodate circuit demands

Secondary Compatibility Criteria:

• FET Type: N-Channel topology
• Technology: MOSFET (Metal Oxide Semiconductor)
• Mounting Type: Through Hole configuration
• Operating Temperature Range: Must encompass application operating conditions
• Regulatory Compliance: RoHS3 compliance required

The 2SK1835-E from Renesas Electronics Corporation shares the same 1500V Vdss rating and N-Channel MOSFET technology. However, this substitute exhibits reduced continuous drain current (4A versus 8A) and lower maximum power dissipation (125W versus 320W), making it suitable only for applications with lower current and power requirements.

Parameter Comparison

Engineering Selection Recommendations

STW9N150 (Primary Selection): The STW9N150 is the preferred component for applications requiring 8A continuous drain current and 320W power dissipation capability. This part maintains active production status with robust inventory availability (4385 units). Full RoHS3 compliance and MSL Level 1 rating ensure suitability for standard manufacturing and storage conditions. The TO-247-3 package provides standard thermal management characteristics for high-power applications.

2SK1835-E (Conditional Substitute): The 2SK1835-E is suitable as a substitute only in applications where continuous drain current does not exceed 4A and power dissipation remains below 125W. Both parts share identical 1500V Vdss ratings and N-Channel MOSFET technology, ensuring voltage-level compatibility. The 2SK1835-E maintains active production status and RoHS3 compliance. Package differences (TO-3P-3/SC-65-3 versus TO-247-3) require mechanical redesign consideration. The higher drive voltage requirement (15V versus 10V) may impact gate driver circuit design.

Selection between these parts must be based on specific application current and power requirements. The STW9N150 supports higher performance applications, while the 2SK1835-E addresses lower-power circuit implementations.

Frequently Asked Questions (FAQ)

Q: Can the 2SK1835-E directly replace the STW9N150 in all applications?

A: No. The 2SK1835-E has a maximum continuous drain current of 4A compared to the STW9N150's 8A rating. Substitution is valid only for applications where drain current does not exceed 4A and power dissipation remains below 125W. Applications designed for the full 8A capability of the STW9N150 cannot use the 2SK1835-E without circuit redesign.

Q: What are the package compatibility considerations?

A: The STW9N150 uses a TO-247-3 package, while the 2SK1835-E uses TO-3P-3 or SC-65-3 packages. These packages have different physical dimensions and pin configurations. PCB layout and mechanical mounting must be redesigned if substitution is performed. Thermal management characteristics may differ between packages.

Q: Are both parts RoHS3 compliant?

A: Yes. Both the STW9N150 and 2SK1835-E are RoHS3 compliant and carry MSL Level 1 (Unlimited) moisture sensitivity ratings, ensuring compatibility with standard manufacturing processes and storage conditions.

Q: What is the significance of the different drive voltage specifications?

A: The STW9N150 specifies a 10V drive voltage for maximum Rds On performance, while the 2SK1835-E requires 15V. This difference affects gate driver circuit design and power consumption. Applications using the STW9N150 may require gate driver modifications if the 2SK1835-E is substituted.

Q: Are both parts currently in production?

A: Yes. Both the STW9N150 and 2SK1835-E maintain active production status. The STW9N150 has 4385 units in current inventory, while the 2SK1835-E has 32463 units available.

Q: What is the primary electrical difference between these parts?

A: The primary difference is current handling capacity. The STW9N150 supports 8A continuous drain current with 320W power dissipation, while the 2SK1835-E is rated for 4A continuous drain current with 125W power dissipation. Both parts share the same 1500V Vdss rating and N-Channel MOSFET technology.