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STW80NF06 N-Channel MOSFET Equivalent & Substitute Parts
Part Overview
The STW80NF06 is an N-Channel 60V 80A MOSFET manufactured by STMicroelectronics in the STripFET™ II series. This device is rated for 300W power dissipation and features a TO-247-3 through-hole package. The part is currently classified as obsolete, making equivalent and substitute components necessary for ongoing design support and production continuity. Substitute parts must maintain compatibility across drain-source voltage, continuous drain current, gate drive voltage, and thermal characteristics while accommodating the through-hole TO-247 package format.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 60 | V |
| Continuous Drain Current (Id) @ 25°C | 80 | A |
| Drive Voltage (Max Rds On) | 10 | V |
| Rds On (Max) @ Id, Vgs | 8 mOhm @ 40A, 10V | mOhm |
| Gate Threshold Voltage Vgs(th) (Max) @ Id | 4 | V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 150 | nC @ 10V |
| Vgs (Max) | ±20 | V |
| Input Capacitance (Ciss) (Max) @ Vds | 3850 | pF @ 25V |
| Power Dissipation (Max) | 300 | W |
| Operating Temperature (TJ) | 175 | °C |
| Mounting Type | Through Hole | — |
| Package / Case | TO-247-3 | — |
| RoHS Status | RoHS non-compliant | — |
Substitute Part Grouping Explanation
Substitution of the STW80NF06 is determined by the following critical parameters:
Voltage Rating Compatibility: All substitute parts must maintain a Drain to Source Voltage (Vdss) of 60V to ensure safe operation within the same voltage class.
Current Handling: The STW80NF06 specifies 80A continuous drain current. Substitute parts with equal or greater continuous drain current rating are acceptable for direct replacement without circuit derating.
Gate Drive Voltage: All candidates operate at 10V maximum Rds On drive voltage, ensuring compatibility with existing gate drive circuits.
Gate Threshold Voltage: All parts maintain a 4V gate threshold voltage specification, supporting consistent gate drive timing and switching characteristics.
Maximum Gate Voltage: All parts are rated for ±20V maximum gate voltage, ensuring safe operation with standard gate drive topologies.
Package Format: All substitute parts use the TO-247-3 or TO-247AC through-hole package, maintaining mechanical and thermal interface compatibility.
Thermal Characteristics: Operating temperature range and power dissipation ratings determine thermal management requirements. The STW80NF06 operates to 175°C junction temperature with 300W maximum dissipation.
Parameter Comparison
| Parameter | STW80NF06 (Main) | IRFP064PBF | IRFP3206PBF | IRFP3306PBF |
|---|---|---|---|---|
| Manufacturer | STMicroelectronics | Vishay Siliconix | Infineon Technologies | Infineon Technologies |
| Drain to Source Voltage (Vdss) | 60 V | 60 V | 60 V | 60 V |
| Continuous Drain Current (Id) @ 25°C | 80 A | 70 A | 120 A | 120 A |
| Drive Voltage (Max Rds On) | 10 V | 10 V | 10 V | 10 V |
| Rds On (Max) @ Id, Vgs | 8 mOhm @ 40A, 10V | 9 mOhm @ 78A, 10V | 3 mOhm @ 75A, 10V | 4.2 mOhm @ 75A, 10V |
| Gate Threshold Voltage Vgs(th) (Max) @ Id | 4 V @ 250µA | 4 V @ 250µA | 4 V @ 150µA | 4 V @ 150µA |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10V | 190 nC @ 10V | 170 nC @ 10V | 120 nC @ 10V |
| Vgs (Max) | ±20 V | ±20 V | ±20 V | ±20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3850 pF @ 25V | 7400 pF @ 25V | 6540 pF @ 50V | 4520 pF @ 50V |
| Power Dissipation (Max) | 300 W | 300 W | 280 W | 220 W |
| Operating Temperature (TJ) | 175 °C | -55 to 175 °C | -55 to 175 °C | -55 to 175 °C |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
| Product Status | Obsolete | Active | Active | Active |
| RoHS Status | RoHS non-compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
Engineering Selection Recommendations
IRFP064PBF (Vishay Siliconix): This part provides a direct voltage and package match with 70A continuous drain current, which is 12.5% lower than the STW80NF06. The IRFP064PBF is suitable for applications where the 80A specification includes design margin or where circuit current requirements do not exceed 70A. This part is active and ROHS3 compliant. Gate charge is 190 nC, slightly elevated compared to the main part. Power dissipation rating matches at 300W.
IRFP3206PBF (Infineon Technologies): This part exceeds the STW80NF06 specifications with 120A continuous drain current and superior on-resistance of 3 mOhm at 75A, 10V. The IRFP3206PBF is suitable for applications requiring higher current capacity or lower conduction losses. Power dissipation is rated at 280W, which is 6.7% lower than the main part. This part is active and ROHS3 compliant. Gate charge is 170 nC. Operating temperature range extends to -55°C.
IRFP3306PBF (Infineon Technologies): This part also provides 120A continuous drain current with on-resistance of 4.2 mOhm at 75A, 10V. The IRFP3306PBF features the lowest gate charge at 120 nC, reducing gate drive power requirements. Power dissipation is rated at 220W, which is 26.7% lower than the main part. This part is active and ROHS3 compliant. Operating temperature range extends to -55°C. The reduced power dissipation rating requires thermal analysis for high-power applications.
All substitute parts are active products with ROHS3 compliance, addressing the obsolescence and regulatory status of the STW80NF06. Selection between substitutes depends on current requirements, thermal budget, and gate drive circuit constraints.
Frequently Asked Questions (FAQ)
Q: Can the IRFP064PBF replace the STW80NF06 in all applications?
A: The IRFP064PBF is suitable for applications where the circuit current requirement does not exceed 70A. The 10A reduction in continuous drain current rating must be evaluated against the actual circuit operating point. Both parts share identical 60V voltage rating, 10V gate drive voltage, and TO-247-3 package compatibility.
Q: What is the advantage of using IRFP3206PBF or IRFP3306PBF over IRFP064PBF?
A: Both IRFP3206PBF and IRFP3306PBF provide 120A continuous drain current, exceeding the STW80NF06 specification by 50%. The IRFP3206PBF offers superior on-resistance at 3 mOhm, reducing conduction losses. The IRFP3306PBF features lower gate charge at 120 nC, reducing gate drive power. Selection depends on whether conduction loss reduction or gate drive efficiency is prioritized.
Q: Are all substitute parts pin-compatible with the STW80NF06?
A: All substitute parts use the TO-247-3 or TO-247AC through-hole package format. Pin assignments for drain, gate, and source are standard across TO-247 variants. Physical mounting and thermal interface compatibility are maintained.
Q: What is the impact of lower power dissipation ratings on the IRFP3206PBF and IRFP3306PBF?
A: The IRFP3206PBF is rated at 280W and the IRFP3306PBF at 220W, compared to 300W for the STW80NF06. These ratings reflect thermal test conditions at specified junction temperatures. Actual thermal performance depends on heatsink design, ambient temperature, and circuit duty cycle. Applications operating near the 300W limit require thermal analysis to confirm adequate cooling with substitute parts.
Q: Why do the substitute parts have higher input capacitance values?
A: The IRFP064PBF, IRFP3206PBF, and IRFP3306PBF exhibit higher input capacitance (Ciss) compared to the STW80NF06. Higher capacitance increases gate charge requirements and may affect switching speed. Gate drive circuits must supply sufficient current to charge the gate capacitance within the required switching time. This is a design consideration but does not prevent substitution if gate drive capability is adequate.
Q: Are the substitute parts suitable for new designs or only for replacement of obsolete STW80NF06 units?
A: All substitute parts are active products with current manufacturing status and ROHS3 compliance. They are suitable for both replacement applications and new designs. The IRFP3206PBF and IRFP3306PBF are preferred for new designs due to superior performance characteristics and regulatory compliance.
Q: What is the significance of the extended operating temperature range on substitute parts?
A: The substitute parts operate from -55°C to 175°C junction temperature, compared to the STW80NF06 which operates to 175°C maximum. The extended lower temperature range provides additional design flexibility for applications in cold environments. This does not affect substitution suitability but represents an additional capability of the active parts.
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