STW70N60M2 Equivalent & Substitute Parts

Part Overview

The STW70N60M2 is an N-Channel 600V 68A MOSFET manufactured by STMicroelectronics in the MDmesh™ II Plus series. This through-hole TO-247 device is rated for 450W power dissipation and operates across the temperature range of -55°C to 150°C. The part is currently in active production status with 18,329 units in stock.

Equivalent and substitute parts are necessary when the primary part becomes unavailable, when design requirements demand alternative performance characteristics, or when supply chain optimization requires component standardization across manufacturing facilities. Substitute MOSFETs must maintain electrical compatibility within the application's voltage, current, and thermal requirements while conforming to the same or compatible package specifications.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	68	A
On-State Resistance (Rds On Max) @ 34A, 10V	40	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	118	nC
Input Capacitance (Ciss) @ 100V	5200	pF
Power Dissipation (Max)	450	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-247-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution of the STW70N60M2 is determined by the following critical electrical and mechanical parameters:

Voltage Rating: All substitute parts must maintain a Drain to Source Voltage (Vdss) rating of 600V or higher to ensure safe operation within the application's voltage envelope.

Current Rating: Substitute parts must support a continuous drain current (Id) at or above 68A at 25°C to meet or exceed the original part's current-handling capability.

On-State Resistance (Rds On): The maximum on-state resistance must not significantly exceed the original 40mOhm specification to prevent excessive power dissipation and thermal stress.

Package Compatibility: All substitute parts must use the TO-247-3 through-hole package or mechanically compatible variants to ensure direct board-level replacement without redesign.

Temperature Range: Operating temperature specifications must encompass the full -55°C to 150°C range or be compatible with the application's actual operating conditions.

Gate Charge and Input Capacitance: These parameters affect switching speed and driver circuit requirements. Substitutes with significantly higher values may require circuit optimization.

The substitute parts listed below meet these criteria within acceptable engineering tolerances for direct or near-direct replacement applications.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On Max (mOhm)	Vgs(th) (V)	Qg @ 10V (nC)	Ciss @ 100V (pF)	Power Diss. (W)	Temp Range (°C)	Package	Status
STW70N60M2	STMicroelectronics	600	68	40	4	118	5200	450	-55 to 150	TO-247-3	Active
FCH041N60E	onsemi	600	77	41	3.5	380	13700	592	-55 to 150	TO-247-3	Not For New Designs
FCH041N60F	onsemi	600	76	41	5	360	14365	595	-55 to 150	TO-247-3	Not For New Designs
IPW60R045CPAFKSA1	Infineon Technologies	600	60	45	3.5	190	6800	431	-40 to 150	TO-247-3	Active
IPW60R045CPFKSA1	Infineon Technologies	650	60	45	3.5	190	6800	431	-55 to 150	TO-247-3	Not For New Designs
IXKH70N60C5	IXYS	600	70	45	3.5	190	6800	—	-55 to 150	TO-247-3	Active
IXKR40N60C	IXYS	600	38	70	3.9	250	—	—	-40 to 150	TO-247-3	Active
IXKR47N60C5	IXYS	600	47	45	3.5	190	6800	—	-55 to 150	TO-247-3	Active
IXTH80N65X2	IXYS	650	80	40	4.5	144	7753	890	-55 to 150	TO-247-3	Active
R6086YNZ4C13	Rohm Semiconductor	600	86	44	6	110	5100	781	-55 to 150	TO-247-3	Active

Engineering Selection Recommendations

Primary Substitutes (Active Status, Full Compatibility)

The IXKH70N60C5 from IXYS and R6086YNZ4C13 from Rohm Semiconductor are the preferred substitutes. Both parts maintain 600V Vdss rating, support continuous drain currents at or above 68A, operate across the full -55°C to 150°C temperature range, and carry active product status. The IXKH70N60C5 provides 70A capability with 45mOhm Rds On, while the R6086YNZ4C13 delivers 86A with 44mOhm Rds On and superior power dissipation rating of 781W. Both are RoHS3 compliant and REACH unaffected.

Secondary Substitutes (Active Status, Current Derating)

The IPW60R045CPAFKSA1 from Infineon Technologies is an active-status alternative with 600V rating and AEC-Q101 automotive qualification. This part supports 60A continuous drain current, which represents an 8A reduction from the STW70N60M2. The operating temperature minimum is -40°C rather than -55°C. This substitute is suitable for applications where the 60A rating is sufficient and automotive-grade reliability is required.

Substitutes with Limitations (Not For New Designs)

The FCH041N60E and FCH041N60F from onsemi are marked "Not For New Designs" and should be used only for legacy system maintenance or when existing inventory must be consumed. Both parts exceed the original current rating (77A and 76A respectively) and offer higher power dissipation (592W and 595W), but carry higher gate charge values (380nC and 360nC) that may affect switching characteristics.

Substitutes with Current Derating (Active Status)

The IXKR47N60C5 from IXYS supports 47A continuous drain current, representing a 21A reduction from the STW70N60M2. This part is suitable only for applications where the lower current rating is acceptable. The IXKR40N60C supports only 38A and carries a higher Rds On of 70mOhm, making it unsuitable for direct replacement in most applications.

Higher Voltage Alternative

The IXTH80N65X2 from IXYS provides 650V Vdss rating with 80A continuous drain current and 890W power dissipation. This part is suitable for applications requiring higher voltage margin or enhanced thermal performance. The operating temperature range matches the original specification.

Frequently Asked Questions (FAQ)

Q: Can the FCH041N60E or FCH041N60F be used as direct replacements despite "Not For New Designs" status?

A: These parts are electrically compatible for direct board-level replacement in existing applications. However, their "Not For New Designs" status indicates that onsemi is discontinuing these products. They should be used only for legacy system support or inventory consumption. For new designs, select from active-status alternatives such as IXKH70N60C5 or R6086YNZ4C13.

Q: What is the impact of higher gate charge (Qg) in substitute parts?

A: Gate charge affects the switching speed and driver circuit requirements. The FCH041N60E and FCH041N60F carry gate charge values of 380nC and 360nC respectively, compared to 118nC for the STW70N60M2. Higher gate charge requires longer switching times and may increase switching losses. Verify that the gate driver circuit can supply sufficient current to achieve acceptable switching performance.

Q: Is the IPW60R045CPAFKSA1 suitable for applications requiring -55°C operation?

A: The IPW60R045CPAFKSA1 (600V variant) operates from -40°C to 150°C, which does not cover the full -55°C minimum of the STW70N60M2. Use this part only in applications where the -40°C minimum is acceptable. The IPW60R045CPFKSA1 (650V variant) extends the lower temperature limit to -55°C but carries "Not For New Designs" status.

Q: Can the IXKR47N60C5 or IXKR40N60C be used as substitutes?

A: These parts support only 47A and 38A continuous drain current respectively, compared to 68A for the STW70N60M2. They are suitable only for applications where the lower current rating meets the design requirements. The IXKR40N60C also carries a significantly higher Rds On of 70mOhm, which increases power dissipation and thermal stress.

Q: What are the advantages of the R6086YNZ4C13 over the STW70N60M2?

A: The R6086YNZ4C13 provides higher continuous drain current (86A versus 68A), higher power dissipation rating (781W versus 450W), and comparable on-state resistance (44mOhm versus 40mOhm). It maintains the same 600V voltage rating and full -55°C to 150°C temperature range. The trade-off is higher gate charge (110nC versus 118nC) and higher gate threshold voltage (6V versus 4V).

Q: Is the IXTH80N65X2 a suitable substitute for higher-reliability applications?

A: The IXTH80N65X2 provides 650V voltage rating, 80A continuous drain current, and 890W power dissipation, offering enhanced performance margins. It maintains the full -55°C to 150°C temperature range and carries active product status. The higher voltage rating provides additional safety margin in applications subject to voltage transients. However, the higher input capacitance (7753pF versus 5200pF) may require gate driver circuit optimization.

Q: Are all substitute parts RoHS3 compliant?

A: All substitute parts listed carry RoHS3 compliance and REACH unaffected status, matching the environmental compliance of the STW70N60M2. All parts are suitable for applications requiring RoHS3 certification.

Q: What is the significance of the TO-247-3 package compatibility?

A: All substitute parts use the TO-247-3 through-hole package or mechanically compatible variants (TO-247, TO-247AD, ISOPLUS247™), enabling direct board-level replacement without PCB redesign. Verify mechanical fit and thermal interface compatibility with the specific application's heatsink and mounting hardware.

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