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STW65N60DM6 Equivalent & Substitute Parts
Part Overview
The STW65N60DM6 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 600V drain-to-source voltage with 38A continuous drain current at 25°C. The device is housed in a TO-247-3 through-hole package and is part of the MDmesh™ DM6 series. This component is Active in product status and fully compliant with RoHS3 and REACH regulations.
Substitute parts are identified when equivalent electrical performance can be achieved within the same voltage class and package configuration, allowing for design flexibility and supply chain alternatives while maintaining circuit functionality.
Substiute Parts
Key Parameters
| Parameter | STW65N60DM6 |
|---|---|
| Manufacturer | STMicroelectronics |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 38A (Tc) |
| Vgs (Max) | ±25V |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| RoHS Status | RoHS3 Compliant |
| REACH Status | REACH Unaffected |
| Product Status | Active |
Substitute Part Grouping Explanation
Substitute parts for the STW65N60DM6 are qualified based on the following critical parameters:
Voltage Class Compatibility: All substitute parts maintain the 600V Vdss rating, ensuring compatibility with circuits designed for this voltage specification.
Package Configuration: All substitutes use the TO-247-3 through-hole package, providing mechanical and thermal interface equivalence.
FET Type and Technology: All substitutes are N-Channel MOSFETs using metal oxide technology, maintaining functional equivalence in circuit topology.
Current Rating: Substitute parts are rated at equal or higher continuous drain current (55A and 77A respectively), providing equal or superior current handling capability compared to the 38A rating of the main part.
Regulatory Compliance: All substitute parts maintain RoHS3 compliance and REACH unaffected status, meeting the same environmental and regulatory requirements.
The identified substitutes are R6055VNZ4C13 and R6077VNZ4C13, both manufactured by Rohm Semiconductor, which satisfy all critical substitution criteria within the same voltage and package class.
Parameter Comparison
| Parameter | STW65N60DM6 | R6055VNZ4C13 | R6077VNZ4C13 |
|---|---|---|---|
| Manufacturer | STMicroelectronics | Rohm Semiconductor | Rohm Semiconductor |
| FET Type | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V | 600 V | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 38A (Tc) | 55A (Tc) | 77A (Tc) |
| Vgs (Max) | ±25V | ±30V | ±30V |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
| Mounting Type | Through Hole | Through Hole | Through Hole |
| RoHS Status | RoHS3 Compliant | RoHS3 Compliant | RoHS3 Compliant |
| REACH Status | REACH Unaffected | REACH Unaffected | REACH Unaffected |
| Product Status | Active | Active | Active |
Engineering Selection Recommendations
All identified substitute parts maintain Active product status, ensuring continued availability and manufacturer support. Both R6055VNZ4C13 and R6077VNZ4C13 meet or exceed the electrical specifications of the STW65N60DM6 within the 600V voltage class.
The R6055VNZ4C13 provides a current rating of 55A, representing a 45% increase over the main part's 38A specification while maintaining identical voltage and package characteristics. This part is suitable for applications requiring equivalent or moderately increased current capacity.
The R6077VNZ4C13 provides a current rating of 77A, representing a 103% increase over the main part's 38A specification. This part is suitable for applications requiring significantly increased current capacity or thermal margin within the same voltage and package envelope.
Both substitute parts carry RoHS3 compliance and REACH unaffected status, matching the regulatory profile of the main part. All three devices are available in active inventory, supporting immediate component procurement.
Frequently Asked Questions (FAQ)
Q: Can R6055VNZ4C13 or R6077VNZ4C13 be used as direct replacements for STW65N60DM6?
A: Yes. Both substitute parts share the same 600V voltage rating, TO-247-3 package configuration, and N-Channel MOSFET technology. The higher current ratings (55A and 77A respectively) provide equal or superior performance compared to the 38A specification of the main part.
Q: What is the primary difference between the two substitute parts?
A: The R6055VNZ4C13 is rated for 55A continuous drain current, while the R6077VNZ4C13 is rated for 77A. Both maintain the same 600V voltage class and TO-247-3 package. Selection depends on the current requirements of the specific application.
Q: Are there any package compatibility concerns?
A: No. All three parts use the TO-247-3 through-hole package, providing identical mechanical and thermal interface characteristics. PCB layout and heatsink mounting remain unchanged.
Q: Do the substitute parts meet the same regulatory requirements?
A: Yes. Both R6055VNZ4C13 and R6077VNZ4C13 are RoHS3 compliant and REACH unaffected, matching the regulatory status of the STW65N60DM6.
Q: What is the gate voltage specification difference?
A: The STW65N60DM6 specifies Vgs (Max) at ±25V, while both substitute parts specify ±30V. This represents a wider gate voltage tolerance in the substitute parts, providing additional design margin.
Q: Are all three parts currently available?
A: Yes. STW65N60DM6 has 5100 pieces in stock, R6055VNZ4C13 has 1689 pieces in stock, and R6077VNZ4C13 has 2187 pieces in stock.
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