STW58N65DM2AG Equivalent & Substitute Parts

Part Overview

The STW58N65DM2AG is an N-Channel 650V 48A MOSFET manufactured by STMicroelectronics in the MDmesh™ DM2 series. This device is packaged in TO-247-3 through-hole configuration and rated for 360W maximum power dissipation at case temperature. The part is Active status and AEC-Q101 qualified for automotive applications.

Substitute parts are identified when equivalent electrical performance and mechanical compatibility are maintained across the critical parameters that define MOSFET functionality in high-voltage switching applications. Alternative models may be required due to inventory availability, supply chain considerations, or specific application requirements within the defined electrical operating envelope.

Substiute Parts

STW58N65DM2AG

STMicroelectronicsIn Stock: 3817STW58N65DM2AG Datasheet

Current PartRFQ

STW56N65DM2

STMicroelectronicsIn Stock: 1286STW56N65DM2 Datasheet

Parametric EquivalentRFQ

IXTH48N65X2

IXYSIn Stock: 1660IXTH48N65X2 Datasheet

SimilarRFQ

IXTH62N65X2

IXYSIn Stock: 826IXTH62N65X2 Datasheet

SimilarRFQ

TK39N60X,S1F

Toshiba Semiconductor and StorageIn Stock: 3909TK39N60X,S1F Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility is determined by strict adherence to the following critical parameters:

Primary Substitution Criteria:

• Drain to Source Voltage (Vdss): 650V minimum
• Continuous Drain Current (Id): 48A or greater at 25°C
• Package Type: TO-247-3 through-hole configuration
• Operating Temperature Range: -55°C to 150°C minimum
• RoHS3 Compliance and MSL Level 1 rating

Secondary Compatibility Parameters:

• On-State Resistance (Rds On): Electrical performance within application tolerance
• Gate Charge (Qg): Switching characteristics compatibility
• Power Dissipation capability: Thermal management requirements
• Gate Threshold Voltage (Vgs(th)): Gate drive circuit compatibility

Substitute parts are grouped into two categories:

Parametric Equivalent: Parts with identical or near-identical electrical specifications and the same base voltage/current rating (STW56N65DM2).

Similar Specification: Parts with the same voltage rating (650V) and equal or higher current capability, with minor variations in secondary parameters (IXTH48N65X2, IXTH62N65X2, TK39N60X,S1F).

Parameter Comparison

Engineering Selection Recommendations

STW56N65DM2 (Parametric Equivalent)

The STW56N65DM2 is the primary parametric equivalent to the STW58N65DM2AG. Both devices are manufactured by STMicroelectronics within the MDmesh™ DM2 series and share identical electrical specifications across all critical parameters: 650V Vdss, 48A continuous drain current, 65mOhm Rds On, and 360W power dissipation. Both maintain Active product status and full RoHS3 compliance. The primary difference is packaging format (Tube versus unspecified for the main part). This substitute provides direct functional replacement with no electrical performance variation.

IXTH48N65X2 (Similar Specification)

The IXTH48N65X2 from IXYS maintains the same 650V/48A rating as the STW58N65DM2AG and is packaged in TO-247-3 configuration. This device operates within the same temperature range (-55°C to 150°C) and meets RoHS3 compliance. Minor parameter variations include slightly higher Rds On (68mOhm versus 65mOhm), lower gate threshold voltage (4.5V versus 5V), and higher power dissipation capability (660W versus 360W). The IXTH48N65X2 is suitable for applications where the STW58N65DM2AG is unavailable and thermal headroom is beneficial.

IXTH62N65X2 (Higher Current Capability)

The IXTH62N65X2 from IXYS provides 650V voltage rating with elevated continuous drain current of 62A, exceeding the 48A requirement of the STW58N65DM2AG. This device features improved on-state resistance (52mOhm at 31A) and higher power dissipation (780W). The IXTH62N65X2 is suitable for applications requiring higher current capacity or improved thermal performance within the same voltage class. All compliance certifications (RoHS3, MSL 1) are maintained.

TK39N60X,S1F (Lower Voltage Alternative)

The TK39N60X,S1F from Toshiba Semiconductor operates at 600V Vdss, which is 50V below the STW58N65DM2AG specification. Continuous drain current is 38.8A, below the 48A rating of the main part. This device is suitable only for applications where 600V voltage rating is acceptable and current requirements do not exceed 38.8A. Power dissipation is limited to 270W. This substitute is not recommended for direct replacement in circuits designed for 650V operation.

Frequently Asked Questions (FAQ)

Q: Can the STW56N65DM2 directly replace the STW58N65DM2AG in all applications?

A: Yes. The STW56N65DM2 is a parametric equivalent with identical electrical specifications across all critical parameters: 650V Vdss, 48A continuous drain current, 65mOhm Rds On, 88nC gate charge, and 360W power dissipation. Both devices operate across the same temperature range (-55°C to 150°C) and meet RoHS3 compliance. The only difference is packaging format.

Q: What are the key differences between the IXTH48N65X2 and the STW58N65DM2AG?

A: Both devices share 650V Vdss and 48A continuous drain current ratings. The IXTH48N65X2 has slightly higher on-state resistance (68mOhm versus 65mOhm), lower gate threshold voltage (4.5V versus 5V), lower gate charge (77nC versus 88nC), and significantly higher power dissipation capability (660W versus 360W). These differences are within acceptable ranges for most switching applications.

Q: Is the IXTH62N65X2 a suitable substitute for the STW58N65DM2AG?

A: The IXTH62N65X2 is suitable for applications where higher current capacity is beneficial or required. It maintains the 650V voltage rating and exceeds the 48A current requirement with 62A continuous drain current. Power dissipation is higher (780W versus 360W), providing additional thermal margin. Gate drive characteristics are compatible. This device is appropriate for applications with current demands up to 62A.

Q: Why is the TK39N60X,S1F not recommended as a direct substitute?

A: The TK39N60X,S1F operates at 600V Vdss, which is 50V below the STW58N65DM2AG specification. Continuous drain current is 38.8A, below the 48A rating. This device is suitable only for applications specifically designed for 600V operation and current levels not exceeding 38.8A. It is not appropriate for circuits requiring 650V voltage rating or 48A current capability.

Q: Are all substitute parts available in the same TO-247-3 package?

A: Yes. All substitute parts listed (STW56N65DM2, IXTH48N65X2, IXTH62N65X2, and TK39N60X,S1F) are packaged in TO-247-3 through-hole configuration, ensuring mechanical compatibility with the STW58N65DM2AG.

Q: Do all substitute parts meet automotive qualification requirements?

A: The STW56N65DM2 shares the same MDmesh™ DM2 series designation as the STW58N65DM2AG. The IXYS devices (IXTH48N65X2, IXTH62N65X2) and Toshiba device (TK39N60X,S1F) are Active status products with RoHS3 compliance and MSL Level 1 rating. Specific automotive qualification (AEC-Q101) status for substitute parts should be verified against application requirements.

Q: What is the impact of gate charge differences on circuit design?

A: Gate charge (Qg) affects gate drive circuit design and switching speed. The STW58N65DM2AG has 88nC gate charge at 10V. The IXTH48N65X2 has lower gate charge (77nC), enabling faster switching. The IXTH62N65X2 has higher gate charge (104nC), requiring slightly more gate drive energy. The TK39N60X,S1F has 85nC gate charge, very close to the main part. These differences are typically accommodated by standard gate drive circuits.

Q: Can on-state resistance variations affect thermal performance?

A: Yes. On-state resistance directly impacts power dissipation and thermal performance. The STW58N65DM2AG has 65mOhm Rds On. The IXTH48N65X2 has 68mOhm (slightly higher losses), while the IXTH62N65X2 has 52mOhm (lower losses). The TK39N60X,S1F has 65mOhm (identical). In high-current applications, lower Rds On values reduce heat generation and improve efficiency.