STW56N60DM2 Equivalent & Substitute Parts

Part Overview

The STW56N60DM2 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 600V drain-to-source voltage with 50A continuous drain current at 25°C. This device is housed in a TO-247-3 through-hole package and is part of the MDmesh™ DM2 series. The part is currently in active production status with 2468 units in stock.

Substitute parts are identified when equivalent electrical performance and mechanical compatibility are required due to component availability, supply chain considerations, or design flexibility within specified parameter ranges. All substitute parts listed maintain compatibility with TO-247-3 through-hole mounting and operate within overlapping voltage and current specifications.

Substiute Parts

STW56N60DM2

STMicroelectronicsIn Stock: 2550STW56N60DM2 Datasheet

Current PartRFQ

IXTH48N65X2

IXYSIn Stock: 1660IXTH48N65X2 Datasheet

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IXTH62N65X2

IXYSIn Stock: 826IXTH62N65X2 Datasheet

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R6077VNZ4C13

Rohm SemiconductorIn Stock: 2245R6077VNZ4C13 Datasheet

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TK39N60W,S1VF

Toshiba Semiconductor and StorageIn Stock: 703TK39N60W,S1VF Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the STW56N60DM2 is determined by the following criteria:

Voltage Compatibility: All substitute parts must operate at or above 600V drain-to-source voltage. Parts rated at 650V are acceptable as they provide equivalent or superior voltage withstand capability.

Current Rating: Substitute parts must support continuous drain current ratings within the operational range of the primary application. Parts rated between 38.8A and 77A are functionally compatible with the 50A specification.

On-State Resistance: Rds On values between 51 mOhm and 68 mOhm at comparable gate voltage and current conditions indicate equivalent switching performance and thermal characteristics.

Package Compatibility: All substitute parts are housed in TO-247-3 through-hole packages, ensuring mechanical and thermal interface compatibility.

Temperature Range: All substitute parts operate across the -55°C to 150°C temperature range, maintaining thermal performance consistency.

Compliance Status: All substitute parts are ROHS3 compliant and REACH unaffected, matching the regulatory status of the primary part.

Parameter Comparison

Engineering Selection Recommendations

STW56N60DM2 (Primary Selection): This part is the baseline reference. It is actively produced by STMicroelectronics with the highest inventory availability (2468 units). It is ROHS3 compliant and REACH unaffected. Selection is appropriate when MDmesh™ DM2 series performance characteristics are specified or when maximum inventory availability is required.

IXTH48N65X2 (IXYS Ultra X2 Series): This substitute operates at 650V, providing 2% higher voltage margin than the primary part. Continuous drain current is rated at 48A, which is 4% lower than the STW56N60DM2. On-state resistance is 68 mOhm, representing 13% higher resistance. This part is suitable for applications where higher voltage withstand is beneficial and current requirements do not exceed 48A. Inventory availability is 1550 units.

IXTH62N65X2 (IXYS Ultra X2 Series): This substitute operates at 650V with a continuous drain current rating of 62A, which is 24% higher than the primary part. On-state resistance is 52 mOhm, representing 13% lower resistance than the STW56N60DM2. Power dissipation capability is 780W, more than double the primary part. This part is suitable for applications requiring higher current capacity or lower conduction losses. Inventory availability is 724 units.

R6077VNZ4C13 (Rohm PRESTOMOS): This substitute maintains 600V voltage rating and offers the highest continuous drain current rating at 77A, which is 54% higher than the primary part. On-state resistance is 51 mOhm at 15V gate voltage, representing 15% lower resistance. Power dissipation capability is 781W. This part is suitable for high-current applications where maximum current capacity and efficiency are required. Inventory availability is 2187 units.

TK39N60W,S1VF (Toshiba DTMOSIV Series): This substitute maintains 600V voltage rating but has a continuous drain current rating of 38.8A, which is 22% lower than the primary part. On-state resistance is 65 mOhm, representing 8% higher resistance. Power dissipation capability is 270W, which is 25% lower than the primary part. This part is suitable for applications with lower current requirements or where Toshiba device qualification is specified. Inventory availability is 684 units.

Frequently Asked Questions (FAQ)

Q: Can IXTH48N65X2 be used as a direct replacement for STW56N60DM2?

A: IXTH48N65X2 is mechanically compatible (TO-247-3 package) and electrically compatible within specified parameter ranges. The 650V rating provides voltage margin above the 600V specification. However, the 48A current rating is 4% lower than the 50A rating of the STW56N60DM2. Selection depends on whether the application current requirement is 48A or lower. If the design requires the full 50A capability, IXTH48N65X2 is not suitable.

Q: What is the primary advantage of R6077VNZ4C13 over STW56N60DM2?

A: R6077VNZ4C13 provides 54% higher continuous drain current (77A versus 50A) and 15% lower on-state resistance (51 mOhm versus 60 mOhm). These characteristics result in lower conduction losses and higher current capacity. The part is suitable for applications requiring higher efficiency or current handling. Both parts maintain 600V voltage rating and -55°C to 150°C operating temperature range.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All substitute parts listed (IXTH48N65X2, IXTH62N65X2, R6077VNZ4C13, and TK39N60W,S1VF) are ROHS3 compliant and REACH unaffected, matching the regulatory status of the STW56N60DM2.

Q: What is the difference between the IXYS Ultra X2 series parts (IXTH48N65X2 and IXTH62N65X2)?

A: Both IXYS parts operate at 650V. IXTH48N65X2 is rated for 48A continuous drain current with 68 mOhm on-state resistance. IXTH62N65X2 is rated for 62A continuous drain current with 52 mOhm on-state resistance. IXTH62N65X2 provides higher current capacity and lower conduction losses, making it suitable for higher-power applications. IXTH48N65X2 is appropriate for lower-current designs.

Q: Can TK39N60W,S1VF be used in applications requiring 50A continuous current?

A: No. TK39N60W,S1VF is rated for 38.8A continuous drain current at 25°C, which is 22% lower than the 50A requirement of the STW56N60DM2. This part is suitable only for applications with current requirements of 38.8A or lower.

Q: How do gate charge specifications affect substitution?

A: Gate charge (Qg) affects switching speed and gate drive circuit requirements. STW56N60DM2 has 90 nC gate charge. IXTH48N65X2 has 77 nC (lower, faster switching), while IXTH62N65X2, R6077VNZ4C13, and TK39N60W,S1VF have 104 nC, 108 nC, and 110 nC respectively (higher, slower switching). Gate drive circuits must be capable of supplying the required charge within the specified time frame. Higher gate charge may require gate drive circuit adjustment.

Q: What inventory considerations should guide part selection?

A: STW56N60DM2 has the highest inventory availability at 2468 units. R6077VNZ4C13 has 2187 units. IXTH48N65X2 has 1550 units. IXTH62N65X2 has 724 units. TK39N60W,S1VF has 684 units. Inventory availability may influence selection when supply chain continuity is a consideration, provided electrical and mechanical specifications are met.

Q: Are all substitute parts housed in TO-247-3 packages?

A: Yes. All substitute parts are housed in TO-247-3 through-hole packages, ensuring mechanical compatibility with the STW56N60DM2 in terms of pin configuration, mounting interface, and thermal coupling to heat sinks.