STW4N150 Equivalent & Substitute Parts

Part Overview

The STW4N150 is an N-Channel 1500V 4A MOSFET manufactured by STMicroelectronics in the PowerMESH™ series. This through-hole TO-247-3 package device is rated for 160W power dissipation and operates at a maximum junction temperature of 150°C. The part is currently in active production status with 35,300 units in stock. Substitute parts are identified when equivalent voltage and current ratings, package compatibility, and thermal characteristics align with application requirements, enabling component selection flexibility across multiple manufacturers.

Substiute Parts

STW4N150

STMicroelectronicsIn Stock: 35409STW4N150 Datasheet

Current PartRFQ

IXTH2N170D2

IXYSIn Stock: 1092IXTH2N170D2 Datasheet

SimilarRFQ

IXTH3N120

IXYSIn Stock: 1752IXTH3N120 Datasheet

SimilarRFQ

IXTJ4N150

IXYSIn Stock: 1093IXTJ4N150 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the STW4N150 are selected based on the following critical parameters:

Voltage Rating Compatibility: Substitute parts must maintain the 1500V Vdss rating or higher to ensure safe operation in the same circuit topology. Parts with lower voltage ratings cannot be substituted.

Current Rating Compatibility: The STW4N150 delivers 4A continuous drain current. Substitute parts with equal or higher current ratings at the same temperature measurement point (Tc or Tj) are acceptable. Parts with lower current ratings represent a derating and require thermal analysis.

Package Compatibility: All substitute parts must use TO-247-3 or equivalent through-hole packages to maintain mechanical and thermal interface compatibility with existing PCB layouts and heatsink mounting.

On-Resistance (Rds On): The maximum on-resistance of 7Ohm at 2A, 10V establishes the conduction loss profile. Substitute parts with comparable or lower on-resistance values maintain thermal performance characteristics.

Gate Charge (Qg): The 50nC gate charge at 10V determines switching speed and driver circuit requirements. Substitute parts with similar or lower gate charge values ensure compatible gate drive circuitry.

Power Dissipation Rating: The 160W maximum power dissipation establishes the thermal envelope. Substitute parts with equal or higher power ratings support equivalent thermal management strategies.

Operating Temperature: The 150°C maximum junction temperature defines the thermal operating window. Substitute parts with equal or extended temperature ranges maintain reliability margins.

Parameter Comparison

Engineering Selection Recommendations

STW4N150 (Primary Part): This STMicroelectronics MOSFET is the baseline reference. All parts are ROHS3 compliant and REACH unaffected, meeting regulatory requirements for industrial and commercial applications. Active production status ensures long-term availability.

IXTJ4N150 (Closest Equivalent): The IXTJ4N150 from IXYS maintains the identical 1500V Vdss rating and matches the gate charge profile (44.5nC versus 50nC). Current rating is reduced to 2.5A, representing a 37.5% derating from the STW4N150. Power dissipation is reduced to 110W. This part is suitable for applications where the 4A current requirement can be reduced or where thermal constraints limit power dissipation. Extended operating temperature range (-55 to 150°C) provides additional margin. ROHS3 compliance and REACH unaffected status maintained.

IXTH3N120 (Lower Voltage Alternative): The IXTH3N120 operates at 1200V Vdss, representing a 300V reduction from the STW4N150. This part is not suitable for direct substitution in 1500V applications. Current rating is 3A (25% derating), and on-resistance is improved at 4.5Ohm. Power dissipation is 200W. This part is applicable only in circuits designed for 1200V maximum voltage stress. Extended temperature range and ROHS3 compliance maintained.

IXTH2N170D2 (Higher Voltage Alternative): The IXTH2N170D2 operates at 1700V Vdss, exceeding the STW4N150 rating by 200V. This part is a depletion-mode MOSFET with 0V drive voltage, fundamentally different from the enhancement-mode STW4N150 (10V drive voltage). Current rating is severely reduced to 2A (50% derating). Gate charge is elevated to 110nC, requiring different gate drive circuitry. Input capacitance is significantly higher at 3650pF. This part is not recommended as a direct substitute due to operational mode differences and substantially different electrical characteristics.

All substitute parts maintain ROHS3 compliance and REACH unaffected status, supporting regulatory continuity across manufacturer selections.

Frequently Asked Questions (FAQ)

Q: Can the IXTJ4N150 replace the STW4N150 in all applications?

A: The IXTJ4N150 is suitable only in applications where the continuous drain current requirement does not exceed 2.5A. The 1500V voltage rating and TO-247-3 package are compatible. Applications requiring the full 4A rating must use the STW4N150 or conduct thermal analysis to confirm the 2.5A rating is sufficient for the duty cycle.

Q: Why is the IXTH3N120 listed as a substitute if it has a lower voltage rating?

A: The IXTH3N120 is listed as a substitute for applications designed for 1200V operation. It is not a direct substitute for 1500V circuits. Component selection must verify that the circuit maximum voltage stress does not exceed 1200V.

Q: What is the impact of the IXTH2N170D2 being a depletion-mode MOSFET?

A: Depletion-mode MOSFETs operate with a 0V drive voltage and require negative gate voltage to turn off. The STW4N150 is an enhancement-mode MOSFET requiring positive gate voltage to turn on. These are fundamentally different device types and require different gate drive circuits. The IXTH2N170D2 is not a direct substitute.

Q: Are all substitute parts available in the same package?

A: All substitute parts use TO-247-3 or equivalent through-hole packages. The IXTJ4N150 uses ISO247 packaging, which is mechanically and thermally compatible with TO-247-3. PCB layout and heatsink mounting remain compatible across all listed parts.

Q: How do gate charge differences affect circuit design?

A: Gate charge determines the energy required to switch the MOSFET and influences switching speed. The STW4N150 has 50nC gate charge. The IXTH3N120 has 39nC (lower, faster switching), and the IXTJ4N150 has 44.5nC (similar). The IXTH2N170D2 has 110nC (significantly higher, slower switching). Gate drive circuits must supply sufficient current to charge the gate within the required switching time. Higher gate charge may require gate driver circuit modifications.

Q: What compliance certifications apply to all parts?

A: All listed parts are ROHS3 compliant and REACH unaffected. These certifications ensure compatibility with industrial, commercial, and consumer applications subject to environmental regulations.

Q: Can the STW4N150 be used in circuits designed for the IXTJ4N150?

A: Yes. The STW4N150 has higher current rating (4A versus 2.5A) and identical voltage rating (1500V). The gate charge is slightly higher (50nC versus 44.5nC), but gate drive circuits designed for 44.5nC will operate the STW4N150 without modification. Thermal analysis must confirm that the higher power dissipation of the STW4N150 does not exceed heatsink capacity.

Q: What is the significance of the extended operating temperature range in substitute parts?

A: The STW4N150 operates to 150°C maximum junction temperature. The IXYS substitute parts extend the lower temperature limit to -55°C. This extended range provides additional margin for applications in temperature-variable environments but does not affect the upper temperature limit. Applications limited to 150°C maximum do not benefit from the extended lower range.