STW40N20 N-Channel MOSFET 200V 40A TO-247-3 Equivalent & Substitute Parts

Part Overview

The STW40N20 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 200V drain-to-source voltage and 40A continuous drain current in a TO-247-3 through-hole package. This device is part of the STripFET™ series and is currently classified as obsolete. Due to its obsolete status, equivalent and substitute parts from active manufacturers are necessary for new designs and ongoing production requirements. Substitute parts must maintain compatibility with the 200V voltage rating, through-hole TO-247-3 package configuration, and gate drive characteristics while accommodating variations in current capacity and power dissipation ratings.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	200	V
Continuous Drain Current (Id) @ 25°C	40	A (Tc)
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	45	mOhm @ 20A, 10V
Gate Threshold Voltage Vgs(th) (Max) @ Id	4	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	75	nC @ 10V
Power Dissipation (Max)	160	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-247-3	Through Hole
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution of the STW40N20 is determined by strict adherence to the following critical parameters:

Mandatory Compatibility Parameters:

Drain to Source Voltage (Vdss): 200V (exact match required)
FET Type: N-Channel (exact match required)
Technology: MOSFET Metal Oxide (exact match required)
Package Type: TO-247-3 through-hole configuration (exact match required)
Gate Drive Voltage: 10V maximum Rds On specification (exact match required)

Variable Parameters Allowing Substitution:

Continuous Drain Current (Id): Substitute parts rated at 40A or higher are acceptable
Rds On (Max): Substitute parts with equal or lower on-resistance are acceptable
Gate Charge (Qg): Substitute parts with higher gate charge are acceptable
Power Dissipation (Max): Substitute parts with equal or higher power rating are acceptable
Operating Temperature Range: Substitute parts with equal or extended temperature range are acceptable
Maximum Gate Voltage (Vgs Max): Substitute parts with equal or higher gate voltage rating are acceptable

All substitute parts listed maintain the 200V Vdss rating, N-Channel configuration, MOSFET technology, and TO-247-3 package format. Variations in current capacity, on-resistance, and power dissipation reflect different device architectures within the same voltage class and package family.

Parameter Comparison

Parameter	STW40N20 (Main)	APT20M45BVRG	APT20M45BVFRG	IRFP260NPBF	IRFP260PBF	IRFP90N20DPBF	IXTH60N20L2
Manufacturer	STMicroelectronics	Microchip Technology	Microchip Technology	Infineon Technologies	Vishay Siliconix	Infineon Technologies	IXYS
Vdss (V)	200	200	200	200	200	200	200
Id @ 25°C (A)	40	56	56	50	46	94	60
Drive Voltage (V)	10	10	10	10	10	10	10
Rds On (Max) (mOhm)	45 @ 20A	45 @ 500mA	45 @ 500mA	40 @ 28A	55 @ 28A	23 @ 56A	45 @ 30A
Vgs(th) (Max) (V)	4 @ 250µA	4 @ 1mA	4 @ 1mA	4 @ 250µA	4 @ 250µA	5 @ 250µA	4.5 @ 250µA
Gate Charge Qg (Max) (nC)	75 @ 10V	195 @ 10V	195 @ 10V	234 @ 10V	230 @ 10V	270 @ 10V	255 @ 10V
Vgs (Max) (V)	±20	±30	±30	±20	±20	±30	±20
Ciss (Max) (pF)	2500 @ 25V	4860 @ 25V	4860 @ 25V	4057 @ 25V	5200 @ 25V	6040 @ 25V	10500 @ 25V
Power Dissipation (Max) (W)	160	300	300	300	280	580	540
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 175	-55 to 150	-55 to 175	-55 to 150
Package	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3
Product Status	Obsolete	Active	Active	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

All substitute parts listed are ROHS3 compliant and REACH unaffected, matching the regulatory status of the STW40N20. All substitute parts maintain active product status with established supply chains and manufacturing support.

APT20M45BVRG and APT20M45BVFRG (Microchip Technology): These parts provide 56A continuous drain current with 300W power dissipation, exceeding the STW40N20 specifications. Both devices maintain the 200V Vdss rating and 10V drive voltage. The APT20M45BVRG has higher inventory availability (3431 units) compared to the APT20M45BVFRG (893 units). Gate charge is elevated at 195 nC, requiring consideration in gate driver design. Maximum gate voltage rating is ±30V, providing additional margin over the STW40N20's ±20V specification.

IRFP260NPBF (Infineon Technologies HEXFET®): This device provides 50A continuous drain current with 300W power dissipation and extended operating temperature range to 175°C. On-resistance is 40 mOhm at 28A, providing improved performance over the STW40N20. Gate charge is 234 nC at 10V. High inventory availability (65,300 units) supports production requirements.

IRFP260PBF (Vishay Siliconix): This part provides 46A continuous drain current with 280W power dissipation. On-resistance is 55 mOhm at 28A, slightly higher than the STW40N20. Gate charge is 230 nC. Inventory availability is 1,430 units, comparable to the STW40N20 stock level.

IRFP90N20DPBF (Infineon Technologies HEXFET®): This device provides the highest current rating at 94A with 580W power dissipation. On-resistance is 23 mOhm at 56A, significantly lower than the STW40N20. Extended operating temperature range to 175°C is supported. Gate charge is 270 nC. High inventory availability (16,040 units) supports production continuity. Maximum gate voltage is ±30V.

IXTH60N20L2 (IXYS Linear L2™): This part provides 60A continuous drain current with 540W power dissipation. On-resistance is 45 mOhm at 30A, matching the STW40N20 specification. Gate charge is 255 nC. Input capacitance is elevated at 10,500 pF, requiring gate driver consideration. Inventory availability is 5,825 units.

Frequently Asked Questions (FAQ)

Q: Can the STW40N20 be directly replaced with any of these substitute parts?

A: Direct replacement is possible for all listed substitute parts within the same TO-247-3 package. All devices share identical 200V Vdss rating, N-Channel configuration, and 10V drive voltage specification. Pin configuration and package dimensions are compatible. However, differences in gate charge, input capacitance, and on-resistance may require gate driver circuit evaluation.

Q: What is the primary reason for substitution?

A: The STW40N20 is classified as obsolete. All substitute parts are active products with established supply chains, ensuring long-term availability for new designs and production continuity.

Q: How do gate charge differences affect circuit design?

A: Gate charge (Qg) determines the charge required to switch the MOSFET. The STW40N20 has 75 nC gate charge, while substitute parts range from 195 nC to 270 nC. Higher gate charge requires proportionally higher gate driver current or longer switching times. Gate driver circuits must be evaluated to ensure adequate drive capability.

Q: Are there thermal considerations when selecting a substitute?

A: Power dissipation ratings vary significantly. The STW40N20 is rated for 160W, while substitutes range from 280W to 580W. Higher power dissipation ratings indicate improved thermal performance. Applications with marginal thermal design may benefit from substitutes with higher power ratings. Operating temperature ranges extend to 175°C for IRFP260NPBF and IRFP90N20DPBF, compared to 150°C for the STW40N20.

Q: What is the significance of on-resistance (Rds On) differences?

A: On-resistance determines conduction losses. The STW40N20 specifies 45 mOhm at 20A, 10V. Substitute parts with lower on-resistance (such as IRFP90N20DPBF at 23 mOhm) reduce power dissipation and heat generation. Substitutes with equal or higher on-resistance maintain similar loss characteristics.

Q: Do all substitute parts have the same maximum gate voltage rating?

A: No. The STW40N20 and IRFP260 variants are rated for ±20V maximum gate voltage. APT20M45 and IRFP90N20DPBF devices are rated for ±30V, providing additional gate voltage margin. Gate driver circuits must not exceed the specified maximum gate voltage for any selected device.

Q: How does input capacitance (Ciss) affect gate driver selection?

A: Input capacitance determines the charge storage at the gate-source junction. The STW40N20 has 2,500 pF input capacitance, while substitutes range from 4,057 pF to 10,500 pF. Higher input capacitance increases gate driver current requirements and switching losses. Gate driver circuits with marginal current capability may require evaluation when selecting devices with significantly higher input capacitance.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed are ROHS3 compliant and REACH unaffected, matching the regulatory compliance of the STW40N20.

Q: Which substitute part provides the best current capacity upgrade?

A: The IRFP90N20DPBF provides the highest continuous drain current at 94A, more than double the STW40N20 rating. This device also offers the lowest on-resistance at 23 mOhm and highest power dissipation rating at 580W, making it suitable for applications requiring significant current capacity margin.

Q: Can substitutes with higher current ratings be used in lower-current applications?

A: Yes. Devices with higher current ratings are backward compatible with lower-current applications. The primary consideration is gate charge and input capacitance, which may require gate driver circuit adjustment. On-resistance improvements in higher-current devices reduce conduction losses, providing efficiency benefits.

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