STW36NM60ND N-Channel 600V 29A MOSFET Equivalent & Substitute Parts

Part Overview

The STW36NM60ND is an N-Channel 600V 29A MOSFET manufactured by STMicroelectronics in the FDmesh™ II series, housed in a TO-247-3 through-hole package. This device is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design support and procurement continuity. The part delivers 190W maximum power dissipation at the case temperature and operates at a maximum junction temperature of 150°C. It carries automotive-grade qualification under AEC-Q101 and maintains ROHS3 compliance with unlimited moisture sensitivity rating.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	29	A
On-State Resistance (Rds On) @ 14.5A, 10V	110	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	5	V
Gate Charge (Qg) @ 10V	80.4	nC
Input Capacitance (Ciss) @ 50V	2785	pF
Maximum Power Dissipation (Tc)	190	W
Operating Junction Temperature	150	°C
Package Type	TO-247-3	—
Mounting Type	Through Hole	—
Grade	Automotive	—
Qualification	AEC-Q101	—

Substitute Part Grouping Explanation

Substitution of the STW36NM60ND is determined by strict alignment of electrical and mechanical parameters within the N-Channel MOSFET category. The critical substitution criteria are:

Electrical Parameters:

Drain to Source Voltage (Vdss) must equal or exceed 600V
Continuous Drain Current (Id) must equal or exceed 29A at 25°C
On-State Resistance (Rds On) characteristics must support equivalent switching performance
Gate Charge (Qg) and Input Capacitance (Ciss) must remain within acceptable ranges to preserve circuit timing and drive requirements
Gate Threshold Voltage (Vgs(th)) must be compatible with existing gate drive circuitry

Mechanical Parameters:

Package must be TO-247-3 or equivalent through-hole configuration
Mounting type must be through-hole
Power dissipation capability must support thermal requirements

Compliance Parameters:

RoHS3 compliance required
Automotive-grade qualification (AEC-Q101) preferred for automotive applications
Product status consideration for long-term availability

Substitutes are grouped into three categories: MFR Recommended (direct STMicroelectronics replacement), Parametric Equivalent (matching electrical specifications), and Similar (comparable performance with minor parameter variations).

Parameter Comparison

Parameter	STW36NM60ND	STWA60N099DM9AG	STW34NM60ND	IPW60R099CPAFKSA1	IPW60R099CPFKSA1	IPW60R125C6FKSA1	IXFH34N65X2	IXFR44N60	IXFR64N60P
Manufacturer	STMicroelectronics	STMicroelectronics	STMicroelectronics	Infineon	Infineon	Infineon	IXYS	IXYS	IXYS
Vdss (V)	600	600	600	600	650	600	650	600	600
Id @ 25°C (A)	29	29	29	31	31	30	34	38	36
Rds On @ 10V (mOhm)	110 @ 14.5A	—	110 @ 14.5A	105 @ 18A	99 @ 18A	125 @ 14.5A	105 @ 17A	130 @ 22A	105 @ 32A
Vgs(th) (V)	5 @ 250µA	—	5 @ 250µA	3.5 @ 1.2mA	3.5 @ 1.2mA	3.5 @ 960µA	5.5 @ 2.5mA	4.5 @ 4mA	5 @ 8mA
Qg @ 10V (nC)	80.4	—	80.4	80	80	96	56	330	200
Ciss (pF)	2785 @ 50V	—	2785 @ 50V	2800 @ 100V	2800 @ 100V	2127 @ 100V	3330 @ 25V	8900 @ 25V	12000 @ 25V
Power Dissipation (W)	190	—	190	255	255	219	540	400	320
Operating Temp (°C)	150	—	150	-40 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-247-3	TO-247	TO-247-3	PG-TO247-3	PG-TO247-3-1	PG-TO247-3-1	TO-247 (IXTH)	ISOPLUS247™	ISOPLUS247™
Product Status	Obsolete	Active	Active	Active	Not For New Designs	Not For New Designs	Active	Active	Active
AEC-Q101	Yes	—	—	Yes	—	—	—	—	—
RoHS3	Compliant	Compliant	Compliant	Compliant	Compliant	Compliant	Compliant	Compliant	Compliant

Engineering Selection Recommendations

Primary Recommendation: STWA60N099DM9AG

STWA60N099DM9AG is the manufacturer-recommended replacement from STMicroelectronics. This part maintains identical electrical specifications (600V, 29A) and is actively produced. Selection of this part ensures continuity with the original design intent and STMicroelectronics process technology. Current inventory of 951 units supports immediate procurement.

Secondary Recommendation: STW34NM60ND

STW34NM60ND is a parametric equivalent within the STMicroelectronics FDmesh™ II series. It delivers identical electrical performance (600V, 29A, 110mOhm Rds On, 80.4nC gate charge) and maintains the same TO-247-3 through-hole package. This part is actively produced with 5957 units in stock, providing superior availability. The STW34NM60ND is suitable for direct substitution in existing designs without circuit modification.

Tertiary Recommendations: Infineon CoolMOS™ Series

IPW60R099CPAFKSA1 is an active Infineon alternative offering 600V, 31A continuous drain current with 105mOhm Rds On. This part carries automotive-grade AEC-Q101 qualification and operates across -40°C to 150°C. The slightly higher current rating (31A versus 29A) and lower on-state resistance provide performance margin. Gate charge remains comparable at 80nC.

IPW60R099CPFKSA1 provides 650V rating with 31A and 99mOhm Rds On, suitable for applications requiring higher voltage margin. This part is classified as Not For New Designs and carries 1019 units in inventory.

IPW60R125C6FKSA1 offers 600V, 30A with 125mOhm Rds On. This part is Not For New Designs but provides 3400 units in stock for legacy support applications.

IXYS HiPerFET™ Series Alternatives

IXFH34N65X2 delivers 650V, 34A with 105mOhm Rds On in active production status. The 56nC gate charge is significantly lower than the original part, reducing gate drive power requirements. This part is suitable for applications where lower switching losses are beneficial.

IXFR44N60 provides 600V, 38A in ISOPLUS247™ package with active product status. The 130mOhm Rds On and 330nC gate charge represent trade-offs in switching characteristics compared to the original part.

IXFR64N60P offers 600V, 36A in ISOPLUS247™ package with 105mOhm Rds On and active production status. The 200nC gate charge and 12000pF input capacitance require gate drive circuit evaluation.

Selection Criteria Summary

For automotive applications requiring AEC-Q101 qualification, select STWA60N099DM9AG or IPW60R099CPAFKSA1. For maximum availability and identical specifications, select STW34NM60ND. For applications prioritizing lower switching losses, select IXFH34N65X2. For legacy support with extended inventory, select IPW60R125C6FKSA1 or IXFR44N60.

Frequently Asked Questions (FAQ)

Q: Can STW34NM60ND be used as a direct replacement for STW36NM60ND?

A: Yes. STW34NM60ND is a parametric equivalent with identical electrical specifications: 600V Vdss, 29A continuous drain current, 110mOhm Rds On at 14.5A and 10V, 80.4nC gate charge, and 2785pF input capacitance. Both parts use TO-247-3 through-hole packaging and deliver 190W maximum power dissipation. No circuit modifications are required.

Q: What is the difference between STWA60N099DM9AG and STW34NM60ND?

A: STWA60N099DM9AG is the manufacturer-recommended direct replacement from STMicroelectronics. STW34NM60ND is a parametric equivalent within the same FDmesh™ II series. Both deliver identical electrical performance. STWA60N099DM9AG is the preferred choice for new procurement to ensure alignment with current STMicroelectronics product lines.

Q: Can Infineon IPW60R099CPAFKSA1 replace the STW36NM60ND in automotive applications?

A: Yes. IPW60R099CPAFKSA1 carries automotive-grade AEC-Q101 qualification and operates across -40°C to 150°C. It delivers 600V, 31A continuous drain current with 105mOhm Rds On and 80nC gate charge. The slightly higher current rating and lower on-state resistance provide performance margin. Gate drive circuitry compatibility must be confirmed due to the 3.5V gate threshold voltage compared to the original 5V specification.

Q: Why is IPW60R099CPFKSA1 marked as Not For New Designs?

A: IPW60R099CPFKSA1 is classified as Not For New Designs by Infineon, indicating the part is in mature production phase with no planned enhancements or long-term support. This part remains suitable for legacy system support and repair applications where existing inventory is available. For new designs, select IPW60R099CPAFKSA1 (active status) instead.

Q: What are the package differences between TO-247-3 and ISOPLUS247™?

A: Both TO-247-3 and ISOPLUS247™ are through-hole packages with three leads suitable for TO-247 footprints. ISOPLUS247™ is an IXYS variant of the TO-247 standard. Parts using ISOPLUS247™ (IXFR44N60, IXFR64N60P) are mechanically compatible with standard TO-247-3 footprints. Thermal performance and current distribution characteristics may differ; thermal design review is recommended for high-power applications.

Q: How do gate charge differences affect circuit design?

A: Gate charge (Qg) determines the total charge required to switch the MOSFET from off to on state. The original STW36NM60ND requires 80.4nC at 10V gate drive. IXFH34N65X2 requires only 56nC, reducing gate drive power and switching losses. IXFR44N60 requires 330nC and IXFR64N60P requires 200nC, increasing gate drive requirements. Gate drive circuits must supply sufficient current to deliver the required charge within the desired switching time. Substitutes with significantly different gate charge values require gate driver evaluation.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed carry RoHS3 compliance certification. The original STW36NM60ND and all recommended substitutes meet RoHS3 requirements for hazardous substance restrictions.

Q: What is the significance of the -40°C to 150°C operating temperature range on IPW60R099CPAFKSA1 versus the 150°C maximum on STW36NM60ND?

A: IPW60R099CPAFKSA1 specifies a minimum operating temperature of -40°C, whereas the original part does not specify a minimum. Both parts operate to a maximum junction temperature of 150°C. The extended lower temperature specification on the Infineon part provides additional design margin for cold-start and low-temperature operation. For applications operating above -40°C, both parts are equivalent in this regard.

Q: Can IXFK48N60Q3 be used as a substitute?

A: IXFK48N60Q3 is not recommended as a direct substitute. This part uses TO-264AA package (different from TO-247-3), delivers 48A continuous drain current (significantly higher than the 29A requirement), and has 1000W power dissipation capability. While electrically capable, the different package requires PCB redesign. This part is suitable only for applications requiring higher current capacity and willing to accommodate package changes.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message