STW36NM60N N-Channel 600V 29A MOSFET Equivalent & Substitute Parts

Part Overview

The STW36NM60N is an N-Channel 600V 29A MOSFET manufactured by STMicroelectronics in the MDmesh™ II series, housed in a TO-247-3 through-hole package. This device is rated for 210W power dissipation at the case temperature and operates at a maximum junction temperature of 150°C. The part is currently classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design support and procurement continuity. Equivalent parts maintain identical or superior electrical performance within the same package footprint, while substitute parts offer functional alternatives with comparable or enhanced specifications.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	29	A
On-State Resistance (Rds On) @ 14.5A, 10V	105	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	83.6	nC
Input Capacitance (Ciss) @ 100V	2722	pF
Power Dissipation (Max)	210	W
Maximum Gate Voltage (Vgs)	±25	V
Operating Temperature (TJ)	150	°C
Package Type	TO-247-3	Through Hole
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution of the STW36NM60N is determined by strict adherence to the following critical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): Must equal or exceed 600V
Continuous Drain Current (Id): Must equal or exceed 29A at 25°C
On-State Resistance (Rds On): Must not exceed 105mOhm at specified gate voltage
Package Type: Must be TO-247-3 or compatible through-hole variant
Gate Voltage Rating (Vgs): Must accommodate ±25V or higher
Operating Temperature: Must support 150°C junction temperature

Secondary Compatibility Parameters:

Gate Threshold Voltage (Vgs(th)): Acceptable range 3.5V to 5.5V
Gate Charge (Qg): Lower values preferred for switching efficiency
Input Capacitance (Ciss): Lower values preferred for gate drive requirements
Power Dissipation: Equal or higher ratings provide design margin

Substitute parts are grouped into two categories: direct equivalents from the same manufacturer (STMicroelectronics MDmesh™ II series) and cross-manufacturer alternatives meeting or exceeding all electrical specifications. All listed substitutes maintain RoHS3 compliance and REACH unaffected status.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Vgs(th) (V)	Qg (nC)	Ciss (pF)	Power (W)	Vgs Max (V)	Package	Status
STW36NM60N	STMicroelectronics	600	29	105	4	83.6	2722	210	±25	TO-247-3	Obsolete
STW34NM60N	STMicroelectronics	600	29	105	4	80	2722	250	±25	TO-247-3	Active
APT30N60BC6	Microchip Technology	600	30	125	3.5	88	2267	219	±20	TO-247-3	Active
FCH104N60	onsemi	600	37	104	3.5	82	4165	357	±20	TO-247-3	Obsolete
IPW60R099CPAFKSA1	Infineon Technologies	600	31	105	3.5	80	2800	255	±20	TO-247-3	Active
IPW60R099CPFKSA1	Infineon Technologies	650	31	99	3.5	80	2800	255	±20	TO-247-3	Not For New Designs
IPW60R125C6FKSA1	Infineon Technologies	600	30	125	3.5	96	2127	219	±20	TO-247-3	Not For New Designs
IXFH34N65X2	IXYS	650	34	105	5.5	56	3330	540	±30	TO-247-3	Active
IXFR64N60Q3	IXYS	600	42	104	6.5	190	9930	568	±30	TO-247-3	Active
IXFX44N60	IXYS	600	44	130	4.5	330	8900	560	±20	TO-247-3 Variant	Active
IXFX48N60P	IXYS	600	48	135	5	150	8860	830	±30	TO-247-3 Variant	Active

Engineering Selection Recommendations

Direct Equivalent (Recommended Primary Substitute):

The STW34NM60N from STMicroelectronics is the direct equivalent replacement for the obsolete STW36NM60N. Both devices share identical electrical specifications including 600V Vdss, 29A continuous drain current, and 105mOhm on-state resistance. The STW34NM60N offers superior power dissipation capability (250W versus 210W) and is currently in active production status with full RoHS3 compliance. This part maintains the same gate charge characteristics (80nC versus 83.6nC) and input capacitance, ensuring compatibility with existing gate drive circuits. The STW34NM60N is available in tube packaging with 4933 pieces in stock.

Cross-Manufacturer Active Alternatives:

For applications requiring active production status with extended design life, the following parts provide functional substitution:

IPW60R099CPAFKSA1 (Infineon Technologies): Meets all primary substitution criteria with 600V Vdss, 31A continuous drain current, and 105mOhm on-state resistance. This part carries automotive-grade qualification (AEC-Q101) and is actively produced. Operating temperature range extends to -40°C minimum. Power dissipation is rated at 255W, providing design margin above the original 210W specification.

APT30N60BC6 (Microchip Technology): Provides 600V Vdss with 30A continuous drain current and 219W power dissipation. On-state resistance is 125mOhm at 14.5A, which exceeds the original specification but remains within acceptable limits for most applications. This part is in active production status.

IXFH34N65X2 (IXYS): Offers enhanced performance with 650V Vdss, 34A continuous drain current, and 540W power dissipation. On-state resistance matches the original at 105mOhm. This part features lower gate charge (56nC) and higher maximum gate voltage (±30V), providing superior switching characteristics and gate drive flexibility. Active production status with 6936 pieces in stock.

Parts Not Recommended for New Designs:

IPW60R099CPFKSA1 and IPW60R125C6FKSA1 carry "Not For New Designs" status and should be avoided for new applications despite meeting electrical specifications.

Obsolete Parts (Avoid for New Designs):

FCH104N60 (onsemi) is classified as obsolete. While it exceeds the original specifications with 37A continuous drain current and 357W power dissipation, procurement risk and long-term availability are concerns.

Frequently Asked Questions (FAQ)

Q: Can the STW34NM60N directly replace the STW36NM60N without circuit modifications?

A: Yes. The STW34NM60N is a direct equivalent with identical electrical specifications and package type. No circuit modifications are required. The improved power dissipation rating (250W versus 210W) provides additional thermal margin.

Q: What is the primary difference between the STW36NM60N and STW34NM60N?

A: Both parts share identical Vdss (600V), Id (29A), and Rds On (105mOhm) specifications. The STW34NM60N offers higher power dissipation capability (250W versus 210W) and is in active production status. Gate charge is slightly lower (80nC versus 83.6nC), providing marginal switching efficiency improvement.

Q: Are cross-manufacturer substitutes compatible with existing PCB layouts designed for TO-247-3 packages?

A: All listed substitutes use TO-247-3 or compatible through-hole package variants. Physical pin spacing and mounting hole patterns are identical. However, verify specific package designations (TO-247-3, TO-247 [B], PG-TO247-3, PLUS247™-3, ISOPLUS247™) with your PCB layout to confirm mechanical compatibility. Most variants are mechanically interchangeable.

Q: Which substitute offers the best thermal performance?

A: The IXFX48N60P provides the highest power dissipation rating at 830W, followed by IXFR64N60Q3 at 568W and IXFH34N65X2 at 540W. Selection depends on application thermal requirements and gate drive circuit compatibility.

Q: Can I use a substitute with higher Vdss rating (e.g., 650V instead of 600V)?

A: Yes. Higher Vdss ratings provide additional voltage margin and are functionally compatible. The IPW60R099CPFKSA1 (650V) and IXFH34N65X2 (650V) are suitable for 600V applications. Verify that your circuit design does not depend on specific Vdss characteristics.

Q: What is the significance of gate charge (Qg) differences between substitutes?

A: Gate charge affects switching speed and gate drive power requirements. Lower Qg values (e.g., IXFH34N65X2 at 56nC) require less gate drive energy and enable faster switching. Higher Qg values (e.g., IXFR64N60Q3 at 190nC) may require gate drive circuit adjustments but are compatible with standard drivers.

Q: Are all listed substitutes RoHS3 compliant?

A: Yes. All substitute parts listed carry RoHS3 compliance certification and REACH unaffected status, meeting environmental and regulatory requirements equivalent to the original STW36NM60N.

Q: Which substitute is recommended for automotive applications?

A: The IPW60R099CPAFKSA1 carries automotive-grade qualification (AEC-Q101) and is suitable for automotive applications. This part is actively produced and meets all primary substitution criteria.

Q: What is the difference between "Active," "Not For New Designs," and "Obsolete" product status?

A: Active parts are in current production with full manufacturer support and long-term availability. "Not For New Designs" parts are still available but manufacturers recommend against using them in new designs due to planned discontinuation. Obsolete parts are no longer manufactured and should be avoided for new applications due to procurement risk and limited availability.

Q: Can I substitute a part with higher continuous drain current (e.g., 48A instead of 29A)?

A: Yes. Higher current ratings provide design margin and are functionally compatible. The IXFX48N60P (48A) and IXFR64N60Q3 (42A) are suitable for applications originally designed for 29A. Verify that your PCB thermal design and gate drive circuit can accommodate the substitute's characteristics.

Q: What should I verify before finalizing a substitute part selection?

A: Confirm the following: (1) Vdss rating meets or exceeds 600V, (2) continuous drain current meets or exceeds 29A, (3) on-state resistance does not significantly exceed 105mOhm, (4) package type is TO-247-3 or compatible variant, (5) gate voltage rating accommodates your gate drive circuit, (6) thermal design accommodates the substitute's power dissipation, (7) product status supports your design timeline, and (8) compliance certifications (RoHS3, REACH) match your requirements.

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