STW35N60DM2 Equivalent & Substitute Parts

Part Overview

The STW35N60DM2 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 600V drain-to-source voltage with 28A continuous drain current at 25°C. This device operates in the MDmesh™ DM2 series and is housed in a TO-247-3 through-hole package. The component is classified as Active product status with full RoHS3 compliance and unlimited moisture sensitivity rating.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges while maintaining compatible mechanical packaging and thermal characteristics. The following substitute devices meet the core functional requirements of the STW35N60DM2 across voltage, current, and thermal specifications.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	28	A (Tc)
Rds On (Max) @ Id, Vgs	110	mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs	54	nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	2400	pF @ 100V
Power Dissipation (Max)	210	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-247-3	Through Hole
Vgs(th) (Max) @ Id	5	V @ 250µA
Vgs (Max)	±25	V

Substitute Part Grouping Explanation

Substitute parts for the STW35N60DM2 are selected based on the following core electrical and mechanical criteria:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): 600V or higher
Continuous Drain Current (Id): Equal to or greater than 28A at 25°C
On-State Resistance (Rds On): Comparable performance at rated current and gate voltage
Package Type: TO-247-3 or compatible TO-247 variant
Operating Temperature Range: -55°C to 150°C (TJ)
Mounting Type: Through Hole
Compliance: RoHS3 compliant, REACH unaffected

Secondary Compatibility Parameters:

Gate Charge (Qg): Influences switching speed and drive circuit requirements
Input Capacitance (Ciss): Affects gate drive characteristics
Vgs(th) Threshold Voltage: Must be within acceptable gate drive voltage range
Power Dissipation: Thermal management capability

Substitute devices may exceed the STW35N60DM2 specifications in current rating, voltage rating, or power dissipation without compromising circuit compatibility, provided the package footprint and thermal characteristics remain suitable for the application.

Parameter Comparison

Parameter	STW35N60DM2	IPW65R125C7XKSA1	IXFH34N65X2	IXFR64N60Q3	IXFX48N60Q3	IXKH35N60C5	IXTH34N65X2
Manufacturer	STMicroelectronics	Infineon Technologies	IXYS	IXYS	IXYS	IXYS	IXYS
Vdss (V)	600	650	650	600	600	600	650
Id @ 25°C (A)	28	18	34	42	48	35	34
Rds On (Max) (mOhm)	110 @ 14A, 10V	125 @ 8.9A, 10V	105 @ 17A, 10V	104 @ 32A, 10V	140 @ 24A, 10V	100 @ 18A, 10V	105 @ 17A, 10V
Qg (Max) (nC)	54 @ 10V	35 @ 10V	56 @ 10V	190 @ 10V	140 @ 10V	70 @ 10V	53 @ 10V
Ciss (Max) (pF)	2400 @ 100V	1670 @ 400V	3330 @ 25V	9930 @ 25V	7020 @ 25V	2800 @ 100V	3120 @ 25V
Power Dissipation (Max) (W)	210	101	540	568	1000	Not specified	540
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-247-3	PG-TO247-3	TO-247 (IXTH)	ISOPLUS247™	PLUS247™-3	TO-247AD	TO-247 (IXTH)
Vgs(th) (Max) (V)	5 @ 250µA	4 @ 440µA	5.5 @ 2.5mA	6.5 @ 4mA	6.5 @ 4mA	3.9 @ 1.2mA	4.5 @ 4mA
Vgs (Max) (V)	±25	±20	±30	±30	±30	±20	±30
RoHS3 Compliant	Yes	Yes	Yes	Yes	Yes	Yes	Yes
MSL Rating	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

Direct Substitutes (Equivalent Performance):

IXKH35N60C5 and IXTH34N65X2 provide the closest electrical equivalence to the STW35N60DM2. Both devices maintain 600V or higher voltage ratings, deliver 34-35A continuous drain current, and exhibit comparable on-state resistance characteristics. These parts are suitable for direct replacement in applications where the STW35N60DM2 specifications define the circuit design parameters.

Higher Current Capacity Substitutes:

IXFH34N65X2, IXFR64N60Q3, and IXFX48N60Q3 offer increased current ratings (34A to 48A) while maintaining 600V or higher voltage specifications. These devices are compatible with the STW35N60DM2 footprint and thermal package but deliver enhanced current handling. Selection of these parts is appropriate when circuit design permits higher current capability or when thermal margin improvement is required.

Lower Current Substitute:

IPW65R125C7XKSA1 operates at 18A continuous drain current, below the STW35N60DM2 rating of 28A. This device is suitable only for applications where the circuit current requirement does not exceed 18A at 25°C. The higher voltage rating (650V) provides additional voltage margin.

Compliance and Certification:

All substitute parts maintain Active product status, RoHS3 compliance, REACH unaffected status, and unlimited moisture sensitivity rating (MSL 1), matching the STW35N60DM2 regulatory and environmental requirements. All devices are classified under ECCN EAR99 and HTSUS 8541.29.0095.

Package Compatibility:

All substitute devices utilize TO-247-3 or compatible TO-247 package variants (PG-TO247-3, TO-247AD, ISOPLUS247™, PLUS247™-3). These packages share identical pin configurations and mounting footprints, enabling direct PCB substitution without layout modification.

Frequently Asked Questions (FAQ)

Q: Can the IPW65R125C7XKSA1 replace the STW35N60DM2 in all applications?

A: No. The IPW65R125C7XKSA1 is rated for 18A continuous drain current, which is below the STW35N60DM2 specification of 28A. This substitute is suitable only for circuits designed to operate at 18A or lower. Exceeding this current rating will result in thermal stress and potential device failure.

Q: What is the primary advantage of selecting IXFX48N60Q3 over the STW35N60DM2?

A: The IXFX48N60Q3 provides 48A continuous drain current and 1000W maximum power dissipation, compared to the STW35N60DM2 at 28A and 210W. This higher current and power rating enables operation in higher-power applications or provides thermal margin in existing designs. Both devices maintain 600V voltage specification and TO-247-3 package compatibility.

Q: Are there differences in gate drive requirements between the STW35N60DM2 and its substitutes?

A: Yes. Gate charge (Qg) and threshold voltage (Vgs(th)) vary across substitute devices. The STW35N60DM2 specifies 54 nC gate charge and 5V threshold voltage. Substitutes range from 35 nC (IPW65R125C7XKSA1) to 190 nC (IXFR64N60Q3) gate charge. Gate drive circuits must be verified to supply adequate current and voltage for the selected substitute device. Threshold voltage variations (3.9V to 6.5V) may affect switching characteristics and require gate driver adjustment.

Q: Can IXFH34N65X2 and IXTH34N65X2 be used interchangeably?

A: Both devices are rated for 650V and 34A with comparable on-state resistance (105 mOhm). However, IXFH34N65X2 specifies 56 nC gate charge while IXTH34N65X2 specifies 53 nC gate charge. The threshold voltage differs: IXFH34N65X2 at 5.5V versus IXTH34N65X2 at 4.5V. These differences may affect gate drive timing and switching performance. Verification with the specific gate driver circuit is required before interchanging these devices.

Q: What is the significance of input capacitance (Ciss) variation among substitute parts?

A: Input capacitance directly affects gate drive circuit performance and switching speed. The STW35N60DM2 specifies 2400 pF at 100V. Substitutes range from 1670 pF (IPW65R125C7XKSA1) to 9930 pF (IXFR64N60Q3). Higher input capacitance requires greater gate drive current to achieve the same switching speed. Applications with fixed gate drive circuits may experience slower switching transitions with high-capacitance substitutes, potentially affecting efficiency and thermal performance.

Q: Are all substitute parts available in the same through-hole mounting configuration?

A: Yes. All substitute devices are specified as through-hole mounted components in TO-247-3 or compatible TO-247 package variants. Pin configurations are identical, enabling direct PCB substitution without layout modification. However, thermal pad design and heatsink interface may vary slightly between package variants (TO-247-3, PG-TO247-3, TO-247AD, ISOPLUS247™, PLUS247™-3). Verify heatsink compatibility with the selected substitute device.

Q: Which substitute offers the lowest on-state resistance?

A: IXKH35N60C5 specifies 100 mOhm on-state resistance at 18A and 10V gate voltage, representing the lowest value among substitutes. The STW35N60DM2 specifies 110 mOhm at 14A and 10V. Lower on-state resistance reduces conduction losses and heat generation, improving overall circuit efficiency. However, on-state resistance must be compared at equivalent current levels for accurate performance assessment.

Q: What compliance certifications apply to all substitute parts?

A: All substitute devices maintain RoHS3 compliance, REACH unaffected status, and unlimited moisture sensitivity level (MSL 1). All are classified under ECCN EAR99 and HTSUS 8541.29.0095, matching the STW35N60DM2 regulatory framework. These certifications ensure compatibility with environmental and export regulations applicable to the original device.

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