STW30NF20 Equivalent & Substitute Parts

Part Overview

The STW30NF20 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 200V drain-to-source voltage and 30A continuous drain current at 25°C. This device is packaged in a TO-247-3 through-hole configuration and is part of the STripFET™ series. The STW30NF20 is classified as obsolete, making equivalent and substitute parts necessary for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating available packaging options.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	200	V
Continuous Drain Current (Id) @ 25°C	30	A
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	75 mOhm @ 15A, 10V	mOhm
Gate Threshold Voltage (Vgs(th)) @ Id	4	V @ 250µA
Gate Charge (Qg) @ Vgs	38	nC @ 10V
Power Dissipation (Max)	125	W
Operating Temperature Range	-55 to 150	°C
Mounting Type	Through Hole	—
Package / Case	TO-247-3	—

Substitute Part Grouping Explanation

Substitute parts for the STW30NF20 are selected based on the following critical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): 200V (exact match required)
Continuous Drain Current (Id): 30A minimum at 25°C
Drive Voltage: 10V (Max Rds On specification)
Gate Threshold Voltage (Vgs(th)): 4V to 5V @ 250µA
Maximum Gate Voltage (Vgs): ±20V minimum
Mounting Type: Through Hole
FET Type: N-Channel MOSFET

Substitution Categories:

Category 1: Direct Electrical Equivalents (30A Rating) Parts IRFP250MPBF and IRFP250PBF maintain the exact 30A continuous drain current specification with 200V Vdss rating. These devices are packaged in TO-247AC (compatible with TO-247-3 footprint) and represent the closest functional equivalents.

Category 2: Higher Current Capability (46A–65A Rating) Parts IRFP260NPBF, IRFP260PBF, and IRFP4227PBF exceed the 30A requirement with ratings of 50A, 46A, and 65A respectively. These devices provide enhanced thermal performance and lower on-resistance, suitable for applications requiring design margin or thermal headroom.

Category 3: Alternative Packaging (TO-3P) Part IXTQ50N20P provides 50A capability in a TO-3P package, offering different mechanical mounting characteristics while maintaining electrical compatibility at 200V Vdss.

All substitute parts comply with RoHS3 and maintain through-hole mounting configurations.

Parameter Comparison

Parameter	STW30NF20	IRFP250MPBF	IRFP250PBF	IRFP260NPBF	IRFP260PBF	IRFP4227PBF	IXTQ50N20P
Manufacturer	STMicroelectronics	Infineon Technologies	Vishay Siliconix	Infineon Technologies	Vishay Siliconix	Infineon Technologies	IXYS
Vdss (V)	200	200	200	200	200	200	200
Id @ 25°C (A)	30	30	30	50	46	65	50
Rds On (Max) @ 10V (mOhm)	75 @ 15A	75 @ 18A	85 @ 18A	40 @ 28A	55 @ 28A	25 @ 46A	60 @ 50A
Vgs(th) @ 250µA (V)	4	4	4	4	4	5	5
Gate Charge Qg @ 10V (nC)	38	123	140	234	230	98	70
Ciss @ 25V (pF)	1597	2159	2800	4057	5200	4600	2720
Power Dissipation (Max) (W)	125	214	190	300	280	330	360
Operating Temperature (°C)	-55 to 150	-55 to 175	-55 to 150	-55 to 175	-55 to 150	-40 to 175	-55 to 175
Package / Case	TO-247-3	TO-247AC	TO-247AC	TO-247AC	TO-247AC	TO-247AC	TO-3P
Product Status	Obsolete	Active	Active	Active	Active	Active	Active
RoHS3 Compliant	Yes	Yes	Yes	Yes	Yes	Yes	Yes

Engineering Selection Recommendations

For Direct Replacement (Identical Electrical Performance):

IRFP250MPBF and IRFP250PBF are the primary substitutes for the STW30NF20, both maintaining 30A continuous drain current at 200V Vdss. IRFP250MPBF is manufactured by Infineon Technologies and carries active product status with extended operating temperature range (-55°C to 175°C). IRFP250PBF is manufactured by Vishay Siliconix and is also active, though REACH status is affected. Both devices are packaged in TO-247AC, which is mechanically and electrically compatible with the TO-247-3 footprint. Gate charge specifications differ (123 nC and 140 nC respectively versus 38 nC for the original), requiring driver circuit evaluation for switching speed applications.

For Enhanced Thermal Performance:

IRFP260NPBF and IRFP260PBF provide 50A and 46A ratings respectively, offering significantly lower on-resistance (40 mOhm and 55 mOhm) and higher power dissipation capability (300W and 280W). These devices are suitable for applications where thermal margin or current headroom is required. IRFP260NPBF maintains the extended temperature range (-55°C to 175°C), while IRFP260PBF is limited to -55°C to 150°C.

For Maximum Current Capability:

IRFP4227PBF delivers 65A continuous drain current with the lowest on-resistance (25 mOhm @ 46A, 10V) and highest power dissipation (330W). This device is suitable for high-current applications requiring minimal thermal rise. Operating temperature range is -40°C to 175°C. Gate threshold voltage is 5V, requiring verification against driver specifications.

For Alternative Packaging:

IXTQ50N20P provides 50A capability in a TO-3P package, offering different mechanical mounting characteristics. This device features the lowest gate charge (70 nC) among all substitutes, beneficial for high-frequency switching applications. Power dissipation is 360W with operating temperature range -55°C to 175°C.

Compliance Considerations:

All substitute parts are RoHS3 compliant and REACH unaffected except IRFP250PBF (REACH affected). All devices carry EAR99 ECCN classification and identical HTSUS codes. Product status is active for all substitutes, ensuring long-term availability and supply chain stability.

Frequently Asked Questions (FAQ)

Q: Can IRFP250MPBF or IRFP250PBF be used as direct drop-in replacements for STW30NF20?

A: IRFP250MPBF and IRFP250PBF are electrically equivalent at the 30A, 200V specification level. Both are packaged in TO-247AC, which shares the same three-pin through-hole footprint as TO-247-3. However, gate charge differs significantly (123–140 nC versus 38 nC), requiring evaluation of gate driver capability and switching frequency performance. Mechanical mounting is compatible.

Q: What is the difference between TO-247-3 and TO-247AC packaging?

A: TO-247-3 and TO-247AC are mechanically and electrically compatible three-pin through-hole packages. Both feature identical pin spacing and mounting hole patterns. The designations reflect different manufacturer conventions; the packages are interchangeable for PCB assembly purposes.

Q: Why do higher-current devices like IRFP260NPBF have higher gate charge specifications?

A: Gate charge (Qg) increases with die size and current rating. Larger die areas provide lower on-resistance but require more charge to fully enhance the gate-source capacitance. IRFP260NPBF (234 nC) has a larger die than STW30NF20 (38 nC) to support 50A versus 30A. Gate driver circuits must supply sufficient current to charge the gate within the required switching time.

Q: Is IXTQ50N20P compatible with TO-247-3 PCB layouts?

A: IXTQ50N20P is packaged in TO-3P (SC-65-3), which has a different pin configuration and mounting hole pattern than TO-247-3. This device requires PCB redesign and cannot be used as a direct footprint replacement. It is suitable only for new designs or boards with TO-3P layout.

Q: Which substitute part has the lowest on-resistance?

A: IRFP4227PBF has the lowest on-resistance at 25 mOhm @ 46A, 10V. This results in minimal power dissipation during conduction and is advantageous for high-current, continuous-duty applications. However, higher gate charge (98 nC) and gate threshold voltage (5V) must be verified against driver specifications.

Q: Are all substitute parts suitable for the full -55°C to 150°C temperature range of the original?

A: IRFP250PBF and IRFP260PBF maintain the -55°C to 150°C range. IRFP250MPBF, IRFP260NPBF, IRFP4227PBF, and IXTQ50N20P extend the upper limit to 175°C. IRFP4227PBF has a reduced lower limit of -40°C. Applications requiring the full -55°C to 150°C range should use IRFP250PBF or IRFP260PBF.

Q: What is the impact of higher input capacitance (Ciss) on circuit performance?

A: Input capacitance affects gate charge requirements and switching speed. STW30NF20 has 1597 pF @ 25V, while substitutes range from 2159 pF to 5200 pF. Higher Ciss requires more gate charge and longer switching times at fixed driver current. Gate driver circuits must be evaluated to ensure adequate current sourcing capability.

Q: Can IRFP4227PBF be used in applications designed for 30A operation?

A: Yes. IRFP4227PBF is rated for 65A continuous drain current, exceeding the 30A requirement. The device operates safely at 30A with lower junction temperature rise due to lower on-resistance. However, gate threshold voltage is 5V versus 4V for the original, requiring driver voltage verification. Gate charge is 98 nC, lower than some alternatives, reducing switching losses.

Q: Which substitute offers the best thermal performance?

A: IXTQ50N20P provides the highest power dissipation rating at 360W, followed by IRFP4227PBF at 330W. Both devices support extended operating temperatures to 175°C. IXTQ50N20P also features the lowest gate charge (70 nC), reducing switching losses. Selection depends on package compatibility and PCB layout constraints.

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