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STW30N20 N-Channel MOSFET 200V 30A Equivalent & Substitute Parts
Part Overview
The STW30N20 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 200V drain-to-source voltage and 30A continuous drain current in a Through Hole TO-247-3 package. This device is part of the STripFET™ series and is classified as obsolete. Due to its obsolete status, equivalent substitute parts from active product lines are necessary to maintain design continuity and ensure long-term component availability for new designs and production runs.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| FET Type | N-Channel | — |
| Drain to Source Voltage (Vdss) | 200 | V |
| Current - Continuous Drain (Id) @ 25°C | 30 | A (Tc) |
| Rds On (Max) @ Id, Vgs | 75 mOhm @ 15A, 10V | — |
| Vgs(th) (Max) @ Id | 4 | V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 38 | nC @ 10V |
| Power Dissipation (Max) | 125 | W (Tc) |
| Operating Temperature Range | -55 to 150 | °C (TJ) |
| Package / Case | TO-247-3 | — |
| Mounting Type | Through Hole | — |
| RoHS Status | ROHS3 Compliant | — |
Substitute Part Grouping Explanation
Substitution of the STW30N20 is based on electrical and mechanical parameter matching within the N-Channel MOSFET category. The critical parameters that determine substitutability are:
Electrical Matching Criteria:
- Drain to Source Voltage (Vdss): 200V minimum
- Continuous Drain Current (Id): 30A minimum at 25°C
- Gate Threshold Voltage (Vgs(th)): 4V maximum
- Package compatibility: TO-247-3 Through Hole configuration
Compliance Criteria:
- RoHS3 compliance required
- REACH status compatibility
- Operating temperature range: minimum -55°C to 150°C
The substitute parts IRFP250MPBF and IRFP250PBF meet or exceed all critical electrical parameters while maintaining package compatibility and regulatory compliance. Both devices are classified as active products, ensuring ongoing availability and supply chain stability.
Parameter Comparison
| Parameter | STW30N20 (Main) | IRFP250MPBF (Substitute) | IRFP250PBF (Substitute) | Unit |
|---|---|---|---|---|
| Manufacturer | STMicroelectronics | Infineon Technologies | Vishay Siliconix | — |
| Product Status | Obsolete | Active | Active | — |
| FET Type | N-Channel | N-Channel | N-Channel | — |
| Drain to Source Voltage (Vdss) | 200 | 200 | 200 | V |
| Current - Continuous Drain (Id) @ 25°C | 30 | 30 | 30 | A (Tc) |
| Rds On (Max) @ Id, Vgs | 75 mOhm @ 15A, 10V | 75 mOhm @ 18A, 10V | 85 mOhm @ 18A, 10V | — |
| Vgs(th) (Max) @ Id | 4 | 4 | 4 | V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 38 | 123 | 140 | nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1597 | 2159 | 2800 | pF @ 25V |
| Power Dissipation (Max) | 125 | 214 | 190 | W (Tc) |
| Operating Temperature Range | -55 to 150 | -55 to 175 | -55 to 150 | °C (TJ) |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | — |
| Mounting Type | Through Hole | Through Hole | Through Hole | — |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | — |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) | 1 (Unlimited) | 1 (Unlimited) | — |
Engineering Selection Recommendations
IRFP250MPBF (Infineon Technologies): This substitute is manufactured by Infineon Technologies and carries active product status. It meets all critical electrical parameters with identical Vdss (200V), Id (30A), and Vgs(th) (4V) specifications. The device offers superior power dissipation capability (214W versus 125W) and extended operating temperature range (-55°C to 175°C). RoHS3 compliance and MSL 1 rating provide enhanced reliability for storage and handling. This part is suitable for direct substitution in applications where the STW30N20 is no longer available.
IRFP250PBF (Vishay Siliconix): This substitute is manufactured by Vishay Siliconix and maintains active product status. Electrical parameters match the STW30N20 across Vdss, Id, and Vgs(th). Power dissipation (190W) exceeds the original specification. Operating temperature range matches the original (-55°C to 150°C). RoHS3 compliance is confirmed. REACH status is affected, requiring verification for applications subject to REACH regulations. MSL 1 rating provides superior moisture protection compared to the original part.
Both substitute parts are electrically and mechanically compatible with the STW30N20 and are suitable for applications requiring 200V, 30A N-Channel MOSFET functionality in TO-247-3 Through Hole packages.
Frequently Asked Questions (FAQ)
Q: Can the IRFP250MPBF or IRFP250PBF be used as direct replacements for the STW30N20?
A: Yes. Both substitute parts meet the critical electrical specifications: 200V Vdss, 30A continuous drain current, and 4V gate threshold voltage. Package compatibility (TO-247-3 Through Hole) and pin configuration are identical. Both devices are RoHS3 compliant and suitable for direct substitution.
Q: What are the key differences between the STW30N20 and its substitutes?
A: The primary differences are product status and performance enhancements. The STW30N20 is obsolete, while both substitutes are active products. The IRFP250MPBF and IRFP250PBF offer higher power dissipation ratings (214W and 190W respectively versus 125W) and improved moisture sensitivity levels (MSL 1 versus MSL 3). Gate charge and input capacitance are higher in the substitutes, which may affect switching characteristics in high-frequency applications.
Q: Are there any thermal management considerations when substituting these parts?
A: The substitute parts have higher power dissipation ratings, which indicates improved thermal performance. However, thermal management depends on circuit design, heatsinking, and operating conditions. The electrical characteristics remain compatible across all three devices.
Q: What is the significance of the MSL (Moisture Sensitivity Level) difference?
A: The STW30N20 has MSL 3 (168 hours), while both substitutes have MSL 1 (unlimited). MSL 1 provides superior protection against moisture absorption during storage and handling, reducing the risk of damage during soldering and assembly processes. This is an advantage of the substitute parts.
Q: Does the higher gate charge in the substitute parts affect circuit design?
A: Gate charge (Qg) is higher in the substitutes: 123 nC (IRFP250MPBF) and 140 nC (IRFP250PBF) compared to 38 nC in the STW30N20. This affects gate drive requirements and switching speed. Applications with fixed gate drive circuits may require evaluation to ensure adequate drive capability, particularly in high-frequency switching applications.
Q: Are there REACH compliance considerations for these substitutes?
A: The STW30N20 and IRFP250MPBF are both REACH Unaffected. The IRFP250PBF is REACH Affected, requiring verification for applications subject to REACH regulations. Consult regulatory requirements for your specific application and region.
Q: Can these parts be used interchangeably in existing PCB designs?
A: Yes, from a mechanical and electrical standpoint. All three devices use the TO-247-3 Through Hole package with identical pin configuration. However, circuit-level evaluation is recommended for applications sensitive to gate charge, input capacitance, or switching characteristics, as these parameters differ between the original and substitute parts.
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