STW28N60DM2 Equivalent & Substitute Parts

Part Overview

The STW28N60DM2 is an N-Channel 600V 21A MOSFET manufactured by STMicroelectronics in the MDmesh™ DM2 series. This device is packaged in TO-247-3 through-hole configuration and rated for 170W power dissipation at case temperature. The part is currently Active in product status with 2059 units in stock inventory.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges while maintaining compatible mechanical packaging and thermal characteristics. The following substitute devices meet the core electrical requirements for direct replacement applications.

Substiute Parts

STW28N60DM2

STMicroelectronicsIn Stock: 2087STW28N60DM2 Datasheet

Current PartRFQ

IPW60R190E6FKSA1

Infineon TechnologiesIn Stock: 1107IPW60R190E6FKSA1 Datasheet

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IXFH30N60X

IXYSIn Stock: 1174IXFH30N60X Datasheet

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IXFH50N60P3

IXYSIn Stock: 1594IXFH50N60P3 Datasheet

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IXTH24N65X2

IXYSIn Stock: 1532IXTH24N65X2 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the STW28N60DM2 are selected based on the following critical electrical and mechanical parameters:

Voltage Rating Compatibility: All substitute devices maintain a minimum Drain to Source Voltage (Vdss) rating of 600V or higher, ensuring operation within the same voltage class.

Current Rating Compatibility: Substitute devices are rated for continuous drain current (Id) at or above 21A at 25°C case temperature, supporting equivalent or higher current-handling capacity.

On-State Resistance (Rds On): Substitute devices exhibit on-state resistance values within acceptable operating ranges, typically between 145mOhm and 190mOhm at rated gate drive voltage (10V), ensuring comparable conduction losses.

Gate Charge (Qg): Gate charge values range from 34nC to 94nC at 10V drive, affecting switching speed and gate drive circuit requirements.

Thermal Performance: Power dissipation ratings of 151W or higher support the thermal requirements of the application.

Package Compatibility: All substitute devices are housed in TO-247-3 or equivalent TO-247 through-hole packages, maintaining mechanical and thermal interface compatibility.

Operating Temperature: All devices operate across the -55°C to 150°C temperature range, ensuring thermal envelope compatibility.

Parameter Comparison

Engineering Selection Recommendations

Primary Substitute - IXTH24N65X2: This device is recommended as the primary substitute for new designs. The IXTH24N65X2 maintains Active product status, ensuring long-term availability and supply chain stability. It provides 24A continuous drain current with 145mOhm on-state resistance, comparable to the STW28N60DM2. The 650V voltage rating provides additional margin above the 600V requirement. Gate charge of 36nC closely matches the original specification at 34nC, minimizing gate drive circuit modifications. ROHS3 compliance and unlimited moisture sensitivity level align with the original part's environmental certifications.

Secondary Substitute - IXFH50N60P3: This device is suitable for applications requiring higher current capacity or lower on-state resistance. The IXFH50N60P3 is rated for 50A continuous drain current with 145mOhm on-state resistance, providing superior thermal performance and lower conduction losses. Active product status ensures availability. The higher gate charge of 94nC requires verification of gate drive circuit capability. This device is appropriate for designs where thermal headroom or current margin is prioritized.

Alternative Substitute - IPW60R190E6FKSA1: This Infineon device maintains 600V voltage rating and 20.2A current rating, closely matching the original specification. However, the product status is listed as Not For New Designs, limiting its suitability for new development. The 190mOhm on-state resistance is slightly elevated compared to the original 160mOhm specification. This device is appropriate only for legacy system maintenance or replacement applications where supply continuity is established.

Not Recommended - IXFH30N60X: Although this device provides superior electrical performance with 30A current rating and 155mOhm on-state resistance, its Obsolete product status precludes use in new designs. Availability and long-term supply cannot be assured. This device is not suitable for production applications.

Frequently Asked Questions (FAQ)

Q: Can the IXTH24N65X2 be used as a direct replacement for the STW28N60DM2?

A: Yes. The IXTH24N65X2 provides equivalent electrical performance within the specified parameter ranges. Both devices are rated for 600V minimum voltage operation, support 21A+ continuous drain current, and are packaged in TO-247-3 through-hole configuration. The 650V rating of the IXTH24N65X2 provides additional voltage margin. Gate charge values of 34nC and 36nC are comparable, requiring no significant gate drive circuit modification.

Q: What is the significance of the on-state resistance (Rds On) difference between substitute parts?

A: On-state resistance directly affects conduction losses and thermal performance. The STW28N60DM2 specifies 160mOhm at 10.5A and 10V gate drive. Substitute devices with lower Rds On values (145mOhm) reduce power dissipation and heat generation, improving efficiency. Substitute devices with higher Rds On values (190mOhm) increase conduction losses and require verification that thermal management remains adequate for the application.

Q: Why is the gate charge (Qg) parameter important for substitution?

A: Gate charge determines the energy required to switch the MOSFET on and off, directly affecting gate drive circuit design and switching losses. The STW28N60DM2 specifies 34nC at 10V. Substitute devices with similar gate charge values (IXTH24N65X2 at 36nC) require minimal gate drive circuit modification. Devices with significantly higher gate charge (IPW60R190E6FKSA1 at 63nC, IXFH50N60P3 at 94nC) may require gate drive circuit redesign to maintain switching speed and efficiency.

Q: Are all substitute parts available in the same package configuration?

A: All substitute devices are housed in TO-247-3 or equivalent TO-247 through-hole packages, maintaining mechanical compatibility with the original STW28N60DM2. The TO-247-3 and TO-247 packages are mechanically and thermally interchangeable for PCB mounting and heatsink attachment applications. Specific package designations (PG-TO247-3-1 for Infineon, TO-247AD for IXYS) represent manufacturer-specific package variants within the TO-247 family.

Q: What is the impact of voltage rating differences on substitution?

A: The STW28N60DM2 is rated for 600V Drain to Source Voltage. Substitute devices rated at 600V or higher (IXTH24N65X2 at 650V) are suitable for direct replacement. Higher voltage ratings provide additional safety margin and do not compromise performance in 600V applications. Devices with lower voltage ratings would not be acceptable substitutes.

Q: How does product status affect the selection of substitute parts?

A: Product status indicates the manufacturer's commitment to supply and support. Active status devices (STW28N60DM2, IXFH50N60P3, IXTH24N65X2) are recommended for new designs and production applications, ensuring long-term availability. Not For New Designs status (IPW60R190E6FKSA1) indicates the manufacturer is phasing out the device and is suitable only for legacy system maintenance. Obsolete status (IXFH30N60X) indicates the device is no longer manufactured and should not be used in new designs.

Q: What compliance certifications should be verified when selecting a substitute?

A: All listed substitute devices maintain ROHS3 compliance and REACH Unaffected status, matching the environmental certifications of the STW28N60DM2. Moisture Sensitivity Level (MSL) is rated as 1 (Unlimited) for all devices, indicating no special moisture handling requirements during storage or assembly. These certifications ensure compatibility with modern manufacturing processes and regulatory requirements.