STW26N65DM2 Equivalent & Substitute Parts

Part Overview

The STW26N65DM2 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 650V drain-to-source voltage with 20A continuous drain current at 25°C. This device is housed in a TO-247-3 through-hole package and is part of the MDmesh™ DM2 series. The part is currently in active production status with 1683 units in stock.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges while maintaining the same package type and thermal characteristics. Alternative models may be required due to supply constraints, design optimization, or application-specific performance requirements.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	650	V
Continuous Drain Current (Id) @ 25°C	20	A
Rds On (Max) @ 10A, 10V	190	mOhm
Gate Charge (Qg) @ 10V	35.5	nC
Power Dissipation (Max)	170	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-247-3	—
FET Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitution eligibility for the STW26N65DM2 is determined by the following criteria:

Voltage Rating: All substitute parts must maintain a Vdss rating of 650V to ensure compatibility with the application's voltage stress requirements.

Current Rating: Substitute parts must support a continuous drain current (Id) at or above 20A at 25°C to meet or exceed the original part's current-handling capability.

On-Resistance (Rds On): The maximum on-resistance at specified gate and drain conditions must not exceed 190mOhm to maintain equivalent power dissipation characteristics.

Package Type: All substitute parts must use the TO-247-3 through-hole package to ensure mechanical and thermal compatibility with existing PCB layouts.

Gate Charge (Qg): Gate charge values influence switching speed and driver requirements. Substitute parts with significantly higher gate charge may require driver circuit adjustments.

Operating Temperature: Substitute parts must support the full operating temperature range of -55°C to 150°C (junction temperature).

Technology Type: While the primary part uses standard MOSFET technology, silicon carbide (SiCFET) alternatives are included where electrical parameters align, as they offer superior thermal performance and lower switching losses.

Parameter Comparison

Parameter	STW26N65DM2 (Main)	FCH190N65F-F155	SCT3120ALGC11	Unit
Manufacturer	STMicroelectronics	onsemi	Rohm Semiconductor	—
Drain to Source Voltage (Vdss)	650	650	650	V
Continuous Drain Current (Id) @ 25°C	20	20.6	21	A
Rds On (Max) @ Specified Conditions	190 @ 10A, 10V	190 @ 10A, 10V	156 @ 6.7A, 18V	mOhm
Gate Charge (Qg) @ 10V	35.5	78	38	nC
Power Dissipation (Max)	170	208	103	W
Operating Temperature Range (TJ)	-55 to 150	-55 to 150	-55 to 175	°C
Package Type	TO-247-3	TO-247-3	TO-247N	—
FET Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	SiCFET (Silicon Carbide)	—
Product Status	Active	Not For New Designs	Active	—
RoHS3 Compliance	Yes	Yes	Yes	—
REACH Status	Unaffected	Unaffected	Unaffected	—

Engineering Selection Recommendations

FCH190N65F-F155 (onsemi)

This part provides electrical equivalence to the STW26N65DM2 with matching Vdss (650V), comparable continuous drain current (20.6A), and identical on-resistance specification (190mOhm @ 10A, 10V). Both devices use standard MOSFET technology and are housed in TO-247-3 packages. However, the FCH190N65F-F155 carries a "Not For New Designs" product status, indicating onsemi has discontinued active development for this part. This part is suitable for replacement in existing designs or legacy applications where supply continuity is required, but should not be selected for new product development. Gate charge is elevated at 78nC compared to 35.5nC in the main part, requiring verification of driver circuit compatibility.

SCT3120ALGC11 (Rohm Semiconductor)

This silicon carbide FET offers superior thermal performance with a maximum power dissipation of 103W and extended operating temperature capability to 175°C junction temperature, compared to 170W and 150°C for the STW26N65DM2. The SCT3120ALGC11 maintains the 650V voltage rating and exceeds the 20A current requirement at 21A continuous drain current. On-resistance is lower at 156mOhm when measured at 6.7A and 18V gate voltage, indicating improved efficiency characteristics. The device is housed in a TO-247N package, which is mechanically compatible with TO-247-3 layouts. The SCT3120ALGC11 is in active production status and carries full RoHS3 and REACH compliance. This part is suitable for new designs requiring enhanced thermal management or operation at elevated junction temperatures. Gate charge specification of 38nC is comparable to the main part, minimizing driver circuit modifications.

Frequently Asked Questions (FAQ)

Q: Can the FCH190N65F-F155 be used as a direct replacement for the STW26N65DM2?

A: The FCH190N65F-F155 meets the core electrical specifications (650V, 20.6A, 190mOhm on-resistance) and uses the same TO-247-3 package, making it electrically compatible. However, the elevated gate charge (78nC versus 35.5nC) may require driver circuit evaluation. Additionally, the "Not For New Designs" status indicates this part should be used only for replacement in existing applications, not for new product development.

Q: What are the advantages of the SCT3120ALGC11 over the STW26N65DM2?

A: The SCT3120ALGC11 is a silicon carbide FET offering lower on-resistance (156mOhm at specified conditions), higher power dissipation capability (103W), and extended operating temperature range to 175°C. These characteristics result in improved thermal efficiency and reduced switching losses. The part is in active production status, making it suitable for new designs.

Q: Are there package compatibility concerns between TO-247-3 and TO-247N?

A: TO-247-3 and TO-247N packages are mechanically compatible for through-hole PCB mounting. Both use three leads with identical pin spacing and mounting hole patterns. The primary difference is in thermal pad design, with TO-247N offering enhanced thermal performance. Existing PCB layouts designed for TO-247-3 will accommodate TO-247N devices without modification.

Q: How does gate charge affect circuit design when substituting parts?

A: Gate charge (Qg) determines the amount of charge required to switch the FET on or off. The FCH190N65F-F155 has a gate charge of 78nC compared to 35.5nC for the STW26N65DM2. Higher gate charge requires longer switching times or higher driver current capability. Driver circuits must be evaluated to ensure adequate current sourcing and sinking capability at the intended switching frequency.

Q: Are all substitute parts RoHS3 and REACH compliant?

A: Yes. The STW26N65DM2, FCH190N65F-F155, and SCT3120ALGC11 are all RoHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements for electronic components.

Q: Which substitute part should be selected for new product designs?

A: The SCT3120ALGC11 is the recommended choice for new designs due to its active production status, superior thermal characteristics, and enhanced operating temperature range. The FCH190N65F-F155 should be reserved for replacement applications in existing products where the original part is no longer available.

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