STW24N60DM2 Equivalent & Substitute Parts

Part Overview

The STW24N60DM2 is an N-Channel 600V 18A MOSFET manufactured by STMicroelectronics in the FDmesh™ II Plus series. This through-hole TO-247-3 package device is rated for 150W power dissipation and operates across a temperature range of -55°C to 150°C. The part is currently Active in product status with 1465 units in stock inventory.

Equivalent and substitute parts are identified based on matching electrical characteristics within acceptable tolerances for drain-source voltage, continuous drain current, on-resistance, and thermal performance. Substitute parts enable design flexibility, support supply chain alternatives, and provide options when the primary part becomes unavailable.

Key Parameters

Parameter	Value	Unit
Manufacturer Part Number	STW24N60DM2	—
Manufacturer	STMicroelectronics	—
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	18	A (Tc)
Rds On (Max) @ Id, Vgs	200	mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs	29	nC @ 10V
Power Dissipation (Max)	150	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package / Case	TO-247-3	—
Mounting Type	Through Hole	—
Product Status	Active	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution eligibility for the STW24N60DM2 is determined by the following critical electrical and mechanical parameters:

Primary Matching Criteria:

Drain to Source Voltage (Vdss): 600V nominal (600V to 650V acceptable range)
Continuous Drain Current (Id): 18A minimum at 25°C
On-Resistance (Rds On): 200mOhm maximum at rated conditions
Package Type: TO-247-3 through-hole configuration
Gate Drive Voltage: 10V standard drive

Secondary Compatibility Factors:

Gate Charge (Qg): 29nC to 135nC range
Power Dissipation: 150W minimum
Operating Temperature: -55°C to 150°C minimum range
Technology: MOSFET (Metal Oxide) or SiCFET (Silicon Carbide)
Compliance: RoHS3 and REACH Unaffected status

Substitute parts meeting these criteria provide functional equivalence for applications requiring N-Channel high-voltage switching in power conversion, motor control, and industrial switching circuits.

Parameter Comparison

Parameter	STW24N60DM2	FCH150N65F-F155	FCH170N60	FCH190N65F-F155	IPW65R190C7XKSA1	IXFH30N60X	IXFH50N60P3	R6024KNZ1C9	SCT3120ALGC11	SPW24N60C3FKSA1	TK16N60W,S1VF
Manufacturer	STMicroelectronics	onsemi	Fairchild Semiconductor	onsemi	Infineon Technologies	IXYS	IXYS	Rohm Semiconductor	Rohm Semiconductor	Infineon Technologies	Toshiba Semiconductor
Vdss (V)	600	650	600	650	650	600	600	600	650	650	600
Id @ 25°C (A)	18	24	22	20.6	13	30	50	24	21	24.3	15.8
Rds On (mOhm)	200 @ 9A, 10V	150 @ 12A, 10V	170 @ 11A, 10V	190 @ 10A, 10V	190 @ 5.7A, 10V	155 @ 15A, 10V	145 @ 500mA, 10V	165 @ 11.3A, 10V	156 @ 6.7A, 18V	160 @ 15.4A, 10V	190 @ 7.9A, 10V
Qg (nC)	29 @ 10V	94 @ 10V	55 @ 10V	78 @ 10V	23 @ 10V	56 @ 10V	94 @ 10V	45 @ 10V	38 @ 18V	135 @ 10V	38 @ 10V
Power Dissipation (W)	150	298	227	208	72	500	1040	245	103	240	130
Operating Temp (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	175	-55 to 150	150
Package	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3
Product Status	Active	Not For New Designs	Active	Not For New Designs	Active	Obsolete	Active	Obsolete	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Active Status Substitutes (Recommended for New Designs):

The following parts maintain Active product status and are suitable for new design implementations:

FCH170N60 (Fairchild Semiconductor): Matches 600V Vdss and provides 22A continuous current with 170mOhm on-resistance. Operates across full -55°C to 150°C range with RoHS3 compliance.
IPW65R190C7XKSA1 (Infineon Technologies CoolMOS™ C7): Provides 650V Vdss with 13A continuous current. Features low gate charge of 23nC and operates to 150°C. Suitable for applications prioritizing switching efficiency.
IXFH50N60P3 (IXYS HiPerFET™ Polar3™): Rated for 600V Vdss and 50A continuous current with 145mOhm on-resistance. Delivers 1040W power dissipation for high-current applications. Active status with full compliance.
SCT3120ALGC11 (Rohm Semiconductor SiCFET): Silicon Carbide technology rated 650V with 21A continuous current. Operates to 175°C junction temperature. Requires 18V gate drive. Active status with enhanced thermal performance.
SPW24N60C3FKSA1 (Infineon Technologies CoolMOS™): Rated 650V with 24.3A continuous current and 160mOhm on-resistance. Delivers 240W power dissipation. Active status with direct current capability match.
TK16N60W,S1VF (Toshiba Semiconductor DTMOSIV): Matches 600V Vdss with 15.8A continuous current and 190mOhm on-resistance. Active status with 130W power dissipation suitable for moderate-power applications.

Not For New Designs (Legacy Substitutes):

FCH150N65F-F155 and FCH190N65F-F155 (onsemi SuperFET® II) are designated Not For New Designs. These parts provide higher current ratings (24A and 20.6A respectively) but should not be selected for new circuit implementations.

Obsolete Status (Supply Chain Alternatives Only):

IXFH30N60X and R6024KNZ1C9 are Obsolete. These parts are available in current inventory but lack long-term supply assurance and should only be considered for legacy system maintenance or when no Active alternatives are available.

Frequently Asked Questions (FAQ)

Q: Can I substitute the STW24N60DM2 with a part rated for higher voltage (650V instead of 600V)?

A: Yes. Parts rated 650V Vdss are electrically compatible with 600V applications. The higher voltage rating provides additional design margin. Verify that gate drive voltage requirements match your circuit (standard 10V drive applies to most substitutes; SCT3120ALGC11 requires 18V).

Q: What is the difference between MOSFET and SiCFET technology in these substitutes?

A: SCT3120ALGC11 uses Silicon Carbide (SiCFET) technology, while all other substitutes use conventional Metal Oxide MOSFET technology. SiCFET devices offer lower switching losses and higher temperature operation (175°C vs. 150°C) but require different gate drive characteristics (18V vs. 10V).

Q: Are all substitute parts available in the same TO-247-3 package?

A: Yes. All listed substitutes use TO-247-3 through-hole packaging, ensuring mechanical and thermal interface compatibility with the STW24N60DM2 footprint.

Q: Which substitute provides the closest electrical match to the STW24N60DM2?

A: SPW24N60C3FKSA1 provides the closest match with 24.3A continuous current (vs. 18A), 160mOhm on-resistance (vs. 200mOhm), and 240W power dissipation (vs. 150W). This part is Active status and operates across the full -55°C to 150°C temperature range.

Q: Can I use IXFH50N60P3 as a direct substitute?

A: IXFH50N60P3 is electrically compatible but rated for significantly higher current (50A vs. 18A) and power dissipation (1040W vs. 150W). It is suitable for applications requiring higher current capacity. Verify thermal management and PCB layout accommodate the higher power rating.

Q: What does "Not For New Designs" mean for FCH150N65F-F155 and FCH190N65F-F155?

A: Parts designated "Not For New Designs" are in mature or declining production phases. While currently available in inventory, these parts lack guaranteed long-term supply and should not be selected for new circuit designs. Use Active status alternatives for new implementations.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts carry RoHS3 Compliant status and REACH Unaffected designation, meeting current environmental and regulatory requirements.

Q: How does gate charge (Qg) affect substitute selection?

A: Gate charge determines switching speed and gate drive power requirements. The STW24N60DM2 has 29nC gate charge. Substitutes range from 23nC (IPW65R190C7XKSA1) to 135nC (SPW24N60C3FKSA1). Lower gate charge enables faster switching; higher gate charge may require stronger gate drive circuits.

Q: Can I use TK16N60W,S1VF if my application requires 18A continuous current?

A: TK16N60W,S1VF is rated for 15.8A continuous current, which is below the 18A requirement. This part is not suitable for applications requiring the full 18A rating. Select alternatives with 18A or higher continuous current ratings.

Q: What is the difference between Tc and Ta temperature ratings?

A: Tc indicates case temperature rating; Ta indicates ambient temperature rating. TK16N60W,S1VF specifies 15.8A at Ta (ambient), while most other parts specify current at Tc (case). Verify thermal management design accommodates the specified temperature measurement point.

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