STW220NF75 Equivalent & Substitute Parts

Part Overview

The STW220NF75 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 75V drain-to-source voltage with 120A continuous drain current at 25°C. This device is housed in a TO-247-3 through-hole package and is part of the STripFET™ II series. The STW220NF75 is classified as obsolete, making identification of equivalent substitute components necessary for ongoing design support and procurement continuity. Substitute parts must maintain electrical compatibility across critical parameters including voltage rating, current capacity, and thermal characteristics while accommodating package variations.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	75	V
Continuous Drain Current (Id) @ 25°C	120	A
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	4.4	mOhm @ 60A, 10V
Gate Threshold Voltage (Vgs(th)) @ Id	4	V @ 250µA
Gate Charge (Qg) @ Vgs	430	nC @ 10V
Maximum Gate Voltage (Vgs)	±20	V
Input Capacitance (Ciss) @ Vds	12500	pF @ 25V
Power Dissipation (Max)	500	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-247-3	Through Hole
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitute parts for the STW220NF75 are selected based on strict electrical and mechanical compatibility criteria. The primary substitution parameters are:

Critical Matching Parameters:

Drain to Source Voltage (Vdss): 75V (exact match required)
FET Type: N-Channel (exact match required)
Technology: MOSFET (Metal Oxide) (exact match required)
Package Type: TO-247 series through-hole configuration (compatible variants acceptable)
Operating Temperature Range: -55°C to 175°C (minimum requirement)
Gate Threshold Voltage (Vgs(th)): 4V @ 250µA (exact match required)
Maximum Gate Voltage (Vgs): ±20V (exact match required)

Functional Compatibility Parameters:

Continuous Drain Current (Id) @ 25°C: Equal to or greater than 120A
Rds On (Max) @ 10V: Equal to or less than 4.4mOhm (lower values acceptable)
Power Dissipation (Max): Equal to or greater than 500W (higher values acceptable)

The substitute parts IRFP2907PBF and IRFP3077PBF meet these criteria while accommodating minor package designation variations (TO-247AC versus TO-247-3) that are mechanically and electrically compatible.

Parameter Comparison

Parameter	STW220NF75	IRFP2907PBF	IRFP3077PBF	Unit
Manufacturer	STMicroelectronics	Infineon Technologies	Infineon Technologies
Product Status	Obsolete	Active	Active
FET Type	N-Channel	N-Channel	N-Channel
Drain to Source Voltage (Vdss)	75	75	75	V
Continuous Drain Current (Id) @ 25°C	120	209	120	A
Drive Voltage (Max Rds On)	10	10	10	V
Rds On (Max) @ Id, Vgs	4.4 @ 60A, 10V	4.5 @ 125A, 10V	3.3 @ 75A, 10V	mOhm
Gate Threshold Voltage (Vgs(th)) @ Id	4	4	4	V @ 250µA
Gate Charge (Qg) @ Vgs	430	620	220	nC @ 10V
Maximum Gate Voltage (Vgs)	±20	±20	±20	V
Input Capacitance (Ciss) @ Vds	12500 @ 25V	13000 @ 25V	9400 @ 50V	pF
Power Dissipation (Max)	500	470	340	W
Operating Temperature Range	-55 to 175	-55 to 175	-55 to 175	°C
Package Type	TO-247-3	TO-247AC	TO-247AC
Mounting Type	Through Hole	Through Hole	Through Hole
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected

Engineering Selection Recommendations

IRFP2907PBF Selection Criteria: The IRFP2907PBF is an active product from Infineon Technologies with enhanced current capacity (209A continuous drain current versus 120A). This part exceeds the STW220NF75 specifications in drain current rating and maintains identical voltage ratings and gate threshold characteristics. The IRFP2907PBF is suitable for applications requiring higher current headroom while maintaining the same 75V voltage class. RoHS3 compliance and REACH unaffected status align with the original part's regulatory requirements.

IRFP3077PBF Selection Criteria: The IRFP3077PBF is an active product from Infineon Technologies with matched continuous drain current (120A) and improved on-resistance characteristics (3.3mOhm versus 4.4mOhm). This part provides superior thermal performance through lower conduction losses and reduced gate charge (220nC versus 430nC), resulting in faster switching characteristics. The IRFP3077PBF is suitable for direct replacement in applications where the original current rating is sufficient and improved efficiency is beneficial. RoHS3 compliance and REACH unaffected status align with the original part's regulatory requirements.

Both substitute parts maintain electrical compatibility across all critical parameters including voltage rating, gate threshold voltage, maximum gate voltage, and operating temperature range. Package designation variations (TO-247AC versus TO-247-3) are mechanically and electrically compatible for through-hole mounting applications.

Frequently Asked Questions (FAQ)

Q: Can the IRFP2907PBF and IRFP3077PBF be used interchangeably with the STW220NF75?

A: Both parts are electrically compatible substitutes for the STW220NF75 based on matching voltage ratings (75V Vdss), gate threshold voltage (4V @ 250µA), maximum gate voltage (±20V), and operating temperature range (-55°C to 175°C). However, they differ in current capacity and on-resistance characteristics. Selection depends on application requirements. The IRFP2907PBF provides higher current capacity (209A), while the IRFP3077PBF provides lower on-resistance (3.3mOhm) and reduced gate charge.

Q: What is the difference between TO-247-3 and TO-247AC packages?

A: Both TO-247-3 and TO-247AC are through-hole package variants of the TO-247 family. They are mechanically and electrically compatible for standard PCB mounting applications. The designation variation reflects different manufacturer package specifications but does not affect functional compatibility or pin configuration.

Q: Are the substitute parts RoHS and REACH compliant?

A: Yes. Both IRFP2907PBF and IRFP3077PBF are RoHS3 compliant and REACH unaffected, matching the compliance status of the original STW220NF75.

Q: Why is the STW220NF75 listed as obsolete?

A: The STW220NF75 is classified as obsolete by STMicroelectronics. The substitute parts IRFP2907PBF and IRFP3077PBF are active products from Infineon Technologies, ensuring ongoing availability and manufacturing support.

Q: How do gate charge differences affect circuit design?

A: Gate charge (Qg) affects gate drive circuit requirements and switching speed. The IRFP3077PBF has lower gate charge (220nC) compared to the STW220NF75 (430nC), resulting in faster switching transitions and reduced gate drive power requirements. The IRFP2907PBF has higher gate charge (620nC), requiring more robust gate drive circuitry but providing improved noise immunity.

Q: What are the thermal implications of different power dissipation ratings?

A: The STW220NF75 has a maximum power dissipation of 500W, while the IRFP2907PBF is rated at 470W and the IRFP3077PBF at 340W. These ratings reflect thermal performance under specified conditions. The IRFP3077PBF's lower on-resistance (3.3mOhm) reduces conduction losses, potentially offsetting the lower absolute power rating in many applications.

Q: Are there any pin configuration differences between these parts?

A: All three parts use the TO-247 family package with identical pin configurations for through-hole mounting. No PCB layout modifications are required for substitution.

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