STW20NM50FD N-Channel 500V 20A MOSFET Equivalent & Substitute Parts

Part Overview

The STW20NM50FD is an N-Channel metal oxide semiconductor field-effect transistor (MOSFET) manufactured by STMicroelectronics, rated for 500V drain-to-source voltage and 20A continuous drain current at 25°C. This device is packaged in a TO-247-3 through-hole configuration and is part of the FDmesh™ series. The part maintains active product status with 6513 units in current inventory.

Equivalent and substitute parts are identified based on matching electrical specifications within the 500V drain-to-source voltage class and comparable continuous drain current ratings. Substitutes are selected from manufacturers including Vishay Siliconix and IXYS, all maintaining TO-247-3 package compatibility and through-hole mounting characteristics.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	20	A
On-State Drain Resistance (Rds On) @ 10A, 10V	250	mOhm
Gate-to-Source Threshold Voltage (Vgs(th)) @ 250µA	5	V
Gate Charge (Qg) @ 10V	53	nC
Input Capacitance (Ciss) @ 25V	1380	pF
Power Dissipation (Max)	214	W
Operating Junction Temperature (TJ)	150	°C
Package Type	TO-247-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution logic for the STW20NM50FD is based on the following critical electrical and mechanical parameters:

Primary Matching Criteria:

Drain-to-Source Voltage (Vdss): 500V (exact match required)
Continuous Drain Current (Id): 20A or higher (equal or greater current capability)
Package Type: TO-247-3 (mechanical and thermal compatibility)
Mounting Type: Through Hole (circuit board integration compatibility)
FET Type: N-Channel (functional equivalence)
Technology: MOSFET Metal Oxide (device class equivalence)

Secondary Compatibility Parameters:

Gate-to-Source Threshold Voltage (Vgs(th)): Range compatibility within ±30V maximum gate voltage specification
On-State Drain Resistance (Rds On): Lower or comparable values ensure thermal performance
Gate Charge (Qg): Affects switching speed and drive circuit requirements
Input Capacitance (Ciss): Influences gate drive circuit design
Power Dissipation Rating: Determines thermal management capability

Substitute parts are grouped into two categories: direct current-rated equivalents (20A) and higher current-rated alternatives (22A, 23A, 32A) that provide enhanced current handling and thermal performance while maintaining voltage and package specifications.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Vgs(th) (V)	Qg (nC)	Ciss (pF)	Pd Max (W)	Tj Max (°C)	Package
STW20NM50FD	STMicroelectronics	500	20	250 @ 10A	5 @ 250µA	53	1380	214	150	TO-247-3
IRFP460PBF	Vishay Siliconix	500	20	270 @ 12A	4 @ 250µA	210	4200	280	150	TO-247-3
IRFP460APBF	Vishay Siliconix	500	20	270 @ 12A	4 @ 250µA	105	3100	280	150	TO-247-3
IRFP460LCPBF	Vishay Siliconix	500	20	270 @ 12A	4 @ 250µA	120	3600	280	150	TO-247-3
SIHG20N50C-E3	Vishay Siliconix	500	20	270 @ 10A	5 @ 250µA	76	2942	250	150	TO-247-3
IRFP22N50APBF	Vishay Siliconix	500	22	230 @ 13A	4 @ 250µA	120	3450	277	150	TO-247-3
IRFP23N50LPBF	Vishay Siliconix	500	23	235 @ 14A	5 @ 250µA	150	3600	370	150	TO-247-3
IRFP32N50KPBF	Vishay Siliconix	500	32	160 @ 32A	5 @ 250µA	190	5280	460	150	TO-247-3
IXFH22N50P	IXYS	500	22	270 @ 11A	5.5 @ 2.5mA	50	2630	350	150	TO-247-3
IXFJ26N50P3	IXYS	500	14	265 @ 13A	5 @ 4mA	42	2220	180	150	TO-247-3

Engineering Selection Recommendations

Direct Current-Rated Equivalents (20A Category)

The IRFP460PBF, IRFP460APBF, IRFP460LCPBF, and SIHG20N50C-E3 are functionally equivalent to the STW20NM50FD with matching 20A continuous drain current ratings and 500V voltage specifications. All devices maintain TO-247-3 package compatibility and through-hole mounting. These parts are suitable for direct substitution in applications where the original part is unavailable.

IRFP460PBF offers the highest inventory availability (31,634 units) among 20A-rated alternatives and maintains active product status with ROHS3 compliance and REACH unaffected status. Gate charge specification of 210 nC requires verification of gate drive circuit compatibility.

SIHG20N50C-E3 provides the closest electrical match to the STW20NM50FD with identical threshold voltage (5V @ 250µA) and comparable on-state resistance (270 mOhm @ 10A). This part carries 23,400 units in inventory and maintains ROHS3 compliance with REACH unaffected status.

Enhanced Current-Rated Alternatives (22A–32A Category)

The IRFP22N50APBF and IRFP23N50LPBF provide 22A and 23A continuous drain current ratings respectively, offering improved thermal performance and lower on-state resistance compared to the 20A base specification. Both maintain 500V voltage rating and TO-247-3 package compatibility. These parts are suitable for applications requiring enhanced current handling or thermal margin.

IRFP22N50APBF carries 15,126 units in inventory with ROHS3 compliance and REACH unaffected status. On-state resistance of 230 mOhm @ 13A represents a 8% improvement over the STW20NM50FD specification.

IRFP23N50LPBF carries 15,301 units in inventory with ROHS3 compliance. REACH status is affected for this part. Power dissipation rating of 370W provides significant thermal headroom.

The IRFP32N50KPBF represents the highest current-rated alternative at 32A continuous drain current with 160 mOhm on-state resistance @ 32A. This part is suitable for applications requiring substantial current margin or thermal performance enhancement. ROHS3 compliance and REACH affected status apply. Inventory availability is 7,245 units.

IXYS HiPerFET™ Alternatives

The IXFH22N50P (IXYS HiPerFET™ series) provides 22A continuous drain current with low gate charge specification (50 nC @ 10V), enabling faster switching characteristics. This part is suitable for high-frequency switching applications. Inventory availability is 2,040 units with ROHS3 compliance and REACH unaffected status.

The IXFJ26N50P3 (IXYS HiPerFET™ Polar3™ series) is rated for 14A continuous drain current and is suitable for lower current applications where thermal performance is less critical. Gate charge of 42 nC supports high-frequency operation. Inventory availability is 2,100 units with ROHS3 compliance and REACH unaffected status.

Compliance and Regulatory Status

All substitute parts maintain ROHS3 compliance. REACH status varies: IRFP460PBF, IRFP460APBF, SIHG20N50C-E3, IXFH22N50P, and IXFJ26N50P3 carry REACH unaffected status. IRFP460LCPBF, IRFP22N50APBF, IRFP23N50LPBF, and IRFP32N50KPBF carry REACH affected status. All parts are classified under ECCN EAR99 and HTSUS 8541.29.0095.

Frequently Asked Questions (FAQ)

Q: Can the IRFP460PBF directly replace the STW20NM50FD in my circuit?

A: Yes. Both devices share identical 500V drain-to-source voltage, 20A continuous drain current rating, and TO-247-3 package configuration. Gate charge differs (210 nC versus 53 nC), requiring verification that your gate drive circuit can supply the higher charge requirement within acceptable switching time parameters.

Q: What is the difference between the IRFP460PBF, IRFP460APBF, and IRFP460LCPBF variants?

A: All three are 20A-rated 500V MOSFETs in TO-247-3 packages with identical on-state resistance (270 mOhm @ 12A). Primary differences are gate charge (210 nC, 105 nC, and 120 nC respectively) and input capacitance (4200 pF, 3100 pF, and 3600 pF respectively). Gate charge variation affects switching speed and gate drive circuit requirements. IRFP460APBF offers moderate gate charge with lower input capacitance.

Q: Should I use a higher current-rated part like the IRFP32N50KPBF instead of a 20A equivalent?

A: Higher current-rated parts provide improved thermal performance and lower on-state resistance, reducing power dissipation. Selection depends on your application's current requirements and thermal constraints. If your circuit operates at 20A or below, a 20A-rated part is appropriate. Higher current ratings offer thermal margin but increase component cost and may introduce unnecessary complexity.

Q: Are all substitute parts available in the same package as the STW20NM50FD?

A: Yes. All listed substitute parts use TO-247-3 through-hole packages, ensuring mechanical and thermal compatibility with the original design. Supplier device package designations vary (TO-247AC, TO-247AD, TO-247), but all are functionally equivalent TO-247-3 configurations.

Q: What does REACH affected status mean for part selection?

A: REACH affected status indicates the part contains substances of very high concern (SVHC) listed under EU REACH regulations. REACH unaffected parts do not contain listed SVHC substances. For applications subject to EU regulations or customer requirements, REACH unaffected parts (IRFP460PBF, IRFP460APBF, SIHG20N50C-E3, IXFH22N50P, IXFJ26N50P3) are preferred. REACH affected parts remain compliant but require documentation and declaration.

Q: How do gate charge differences affect circuit design?

A: Gate charge (Qg) determines the total charge required to switch the MOSFET from off to on state. Higher gate charge requires more current from the gate drive circuit or longer switching time. The STW20NM50FD specifies 53 nC, while IRFP460PBF specifies 210 nC. If your gate drive circuit has limited current capability, verify it can supply the required charge within acceptable switching time. Lower gate charge parts (IXFH22N50P at 50 nC) enable faster switching with lower gate drive power requirements.

Q: What inventory considerations apply to substitute part selection?

A: Inventory availability varies significantly. IRFP460PBF offers the highest availability (31,634 units) among 20A equivalents. SIHG20N50C-E3 provides 23,400 units. IRFP22N50APBF and IRFP23N50LPBF each provide approximately 15,000 units. IXYS parts (IXFH22N50P and IXFJ26N50P3) carry lower inventory (2,040 and 2,100 units respectively). For high-volume production, parts with higher inventory availability reduce supply chain risk.

Q: Can I use the IXFJ26N50P3 as a substitute if my application requires only 14A?

A: The IXFJ26N50P3 is rated for 14A continuous drain current, which is below the STW20NM50FD's 20A specification. This part is suitable only if your actual circuit current requirement is 14A or below. Using an undersized part in a 20A application creates thermal stress and reduces device reliability. Verify your actual current requirement before selecting this part.

Q: How do on-state resistance differences impact thermal performance?

A: On-state resistance (Rds On) directly determines power dissipation at a given current: P = I² × Rds On. The STW20NM50FD specifies 250 mOhm @ 10A. IRFP22N50APBF specifies 230 mOhm @ 13A (8% lower), and IRFP32N50KPBF specifies 160 mOhm @ 32A (36% lower). Lower resistance reduces heat generation and improves thermal performance. For applications operating at continuous maximum current, lower Rds On parts reduce cooling requirements and extend device life.

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