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STW200NF03 Equivalent & Substitute Parts
Part Overview
The STW200NF03 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 30V drain-to-source voltage with 120A continuous drain current at 25°C. This device is housed in a TO-247-3 through-hole package and is designed for high-current switching applications requiring robust thermal performance up to 350W at the case temperature.
The STW200NF03 carries an Obsolete product status, indicating that STMicroelectronics has discontinued this component. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support existing systems requiring replacement or redesign.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain-to-Source Voltage (Vdss) | 30 | V |
| Continuous Drain Current (Id) @ 25°C | 120 | A (Tc) |
| On-Resistance (Rds On) @ 60A, 10V | 2.8 | mOhm |
| Gate Threshold Voltage (Vgs(th)) @ 250µA | 4 | V |
| Gate Charge (Qg) @ 10V | 280 | nC |
| Power Dissipation (Max) | 350 | W (Tc) |
| Operating Temperature Range | -55 to 175 | °C (TJ) |
| Package Type | TO-247-3 | Through Hole |
| RoHS Status | ROHS3 Compliant |
Substitute Part Grouping Explanation
Substitution of the STW200NF03 is determined by electrical and mechanical compatibility across the following critical parameters:
Voltage Rating Compatibility: Both the main part and substitute must maintain the same or higher Vdss rating of 30V to ensure safe operation within the original circuit design envelope.
Current Handling Capability: The substitute must support the continuous drain current requirement. The STW200NF03 specifies 120A at 25°C; substitutes with equal or higher current ratings are acceptable.
On-Resistance Characteristics: The Rds On value directly affects power dissipation and thermal performance. Substitutes with equivalent or lower Rds On values maintain or improve circuit efficiency.
Gate Charge and Threshold Voltage: These parameters determine gate drive requirements and switching behavior. Compatibility within specified ranges ensures proper gate driver operation without circuit modification.
Thermal Performance: Power dissipation rating and operating temperature range must support the application's thermal requirements.
Package and Mounting: The TO-247-3 through-hole package is a critical mechanical requirement for board compatibility and thermal management through direct case mounting.
Compliance and Status: RoHS3 compliance and regulatory certifications (REACH, ECCN) must be maintained for supply chain and end-use requirements.
Parameter Comparison
| Parameter | STW200NF03 (Main Part) | IRFP3703PBF (Substitute) | Compatibility |
|---|---|---|---|
| Manufacturer | STMicroelectronics | Infineon Technologies | Different manufacturer |
| Drain-to-Source Voltage (Vdss) | 30 V | 30 V | Matched |
| Continuous Drain Current (Id) @ 25°C | 120 A (Tc) | 210 A (Tc) | Substitute exceeds requirement |
| On-Resistance (Rds On) @ 10V | 2.8 mOhm @ 60A | 2.8 mOhm @ 76A | Equivalent performance |
| Gate Threshold Voltage (Vgs(th)) @ 250µA | 4 V | 4 V | Matched |
| Gate Charge (Qg) @ 10V | 280 nC | 209 nC | Substitute lower (faster switching) |
| Input Capacitance (Ciss) @ 25V | 10000 pF | 8250 pF | Substitute lower |
| Power Dissipation (Max) | 350 W (Tc) | 230 W (Tc) | Substitute lower thermal rating |
| Operating Temperature Range | -55 to 175 °C (TJ) | -55 to 175 °C (TJ) | Matched |
| Package Type | TO-247-3 | TO-247AC | Compatible package family |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | Matched |
| Product Status | Obsolete | Not For New Designs | Both discontinued |
Engineering Selection Recommendations
IRFP3703PBF as Substitute for STW200NF03:
The IRFP3703PBF from Infineon Technologies is electrically compatible with the STW200NF03 across all critical voltage and current parameters. Both devices maintain identical Vdss (30V) and Vgs(th) (4V) ratings, with equivalent on-resistance performance at 2.8 mOhm.
The IRFP3703PBF provides superior current handling at 210A continuous drain current, exceeding the STW200NF03 requirement of 120A. This additional current margin provides design flexibility for applications with variable load conditions.
Gate charge is lower in the IRFP3703PBF (209 nC versus 280 nC), resulting in faster switching transitions and reduced gate drive power requirements. Input capacitance is also reduced (8250 pF versus 10000 pF), further improving switching performance.
Both devices are RoHS3 compliant and REACH unaffected, meeting regulatory requirements for supply chain continuity. Both carry discontinued product status; however, the IRFP3703PBF maintains higher inventory availability (2030 units in stock versus 1418 units for the STW200NF03).
The TO-247AC package used by the IRFP3703PBF is mechanically compatible with TO-247-3 mounting requirements, supporting direct board-level substitution without mechanical redesign.
Thermal performance consideration: The IRFP3703PBF specifies 230W maximum power dissipation at case temperature, compared to 350W for the STW200NF03. Applications operating near the 350W thermal limit require thermal analysis to confirm the substitute's adequacy.
Frequently Asked Questions (FAQ)
Q: Can the IRFP3703PBF directly replace the STW200NF03 without circuit modification?
A: The IRFP3703PBF is electrically compatible with the STW200NF03 across voltage, current, and gate drive parameters. Direct substitution is supported for applications where thermal dissipation does not exceed 230W. No gate driver circuit modification is required due to matched threshold voltage and compatible gate charge characteristics.
Q: What is the difference between TO-247-3 and TO-247AC packages?
A: Both TO-247-3 and TO-247AC are through-hole packages in the TO-247 family with identical pin configurations and mechanical mounting footprints. The primary difference is internal lead frame design and thermal characteristics. Both are mechanically interchangeable for board-level mounting.
Q: Why is the gate charge lower in the IRFP3703PBF?
A: Gate charge (Qg) is determined by the internal capacitance structure of the MOSFET die. The IRFP3703PBF's lower gate charge (209 nC versus 280 nC) reflects differences in die design and process technology between STMicroelectronics and Infineon. Lower gate charge reduces switching losses and gate driver power consumption.
Q: Are both parts suitable for new designs?
A: Both the STW200NF03 and IRFP3703PBF carry discontinued product status (Obsolete and Not For New Designs, respectively). Neither part is recommended for new design implementations. These substitution guidelines apply to replacement and redesign scenarios for existing systems only.
Q: What thermal considerations apply when substituting the IRFP3703PBF?
A: The IRFP3703PBF specifies 230W maximum power dissipation at case temperature, compared to 350W for the STW200NF03. Applications dissipating power above 230W require thermal analysis to confirm adequate heat sinking. The lower thermal rating does not affect electrical performance but may require enhanced thermal management in high-power applications.
Q: Is the IRFP3703PBF available in higher quantities?
A: Yes. Current inventory shows 2030 units of the IRFP3703PBF in stock compared to 1418 units of the STW200NF03, providing improved supply chain availability for replacement applications.
Q: Do both parts meet the same regulatory compliance standards?
A: Yes. Both the STW200NF03 and IRFP3703PBF are RoHS3 compliant, REACH unaffected, and carry identical ECCN (EAR99) and HTSUS classifications, ensuring regulatory compatibility for supply chain and end-use applications.
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