STW18NK80Z Equivalent & Substitute Parts

Part Overview

The STW18NK80Z is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 800V drain-to-source voltage with 19A continuous drain current at 25°C. This device is packaged in TO-247-3 through-hole configuration and belongs to the SuperMESH™ series. The part is classified as obsolete, making identification of equivalent and substitute components necessary for ongoing design support, maintenance, and production continuity. Substitute parts must maintain electrical compatibility across critical parameters including voltage rating, current capacity, and thermal characteristics while accommodating available packaging and product status options.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	800	V
Continuous Drain Current (Id) @ 25°C	19	A (Tc)
On-State Resistance (Rds On Max) @ 10A, 10V	380	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 150µA	4.5	V
Gate Charge (Qg Max) @ 10V	250	nC
Input Capacitance (Ciss Max) @ 25V	6100	pF
Power Dissipation (Max)	350	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-247-3	—
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitution of the STW18NK80Z is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): 800V minimum
Continuous Drain Current (Id) @ 25°C: 19A minimum
Mounting Type: Through Hole
Package / Case: TO-247-3 compatible
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature Range: -55°C to 150°C minimum

Secondary Compatibility Parameters:

On-State Resistance (Rds On): Lower or equivalent values preferred
Gate Charge (Qg): Lower values indicate improved switching performance
Input Capacitance (Ciss): Lower values reduce gate drive requirements
Power Dissipation: Equal or higher ratings accommodate thermal requirements

Substitute parts are grouped based on whether they meet the primary criteria for direct replacement. Parts meeting all primary criteria are classified as direct substitutes. Parts with reduced voltage or current ratings are classified as limited substitutes and require application-specific evaluation.

Parameter Comparison

Parameter	STW18NK80Z	SPW17N80C3FKSA1	APT18M80B	IXFH18N60P	IXFH22N60P3	SPW11N80C3FKSA1
Manufacturer	STMicroelectronics	Infineon Technologies	Microchip Technology	IXYS	IXYS	Infineon Technologies
Vdss (V)	800	800	800	600	600	800
Id @ 25°C (A)	19	17	19	18	22	11
Rds On Max @ 10V (mOhm)	380 @ 10A	290 @ 11A	530 @ 9A	400 @ 500mA	360 @ 11A	450 @ 7.1A
Vgs(th) Max (V)	4.5	3.9	5.0	5.5	5.0	3.9
Qg Max @ 10V (nC)	250	177	120	50	38	85
Ciss Max @ 25V (pF)	6100	2320	3760	2500	2600	1600
Power Dissipation Max (W)	350	227	500	360	500	156
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package / Case	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3
Product Status	Obsolete	Active	Active	Active	Active	Not For New Designs
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Direct Substitutes (800V Rating, 19A or Higher Current):

SPW17N80C3FKSA1 (Infineon Technologies) qualifies as a direct substitute with 800V Vdss and 17A continuous drain current. This part carries Active product status and ROHS3 compliance. The lower gate charge (177 nC versus 250 nC) and reduced input capacitance (2320 pF versus 6100 pF) provide improved switching characteristics. Power dissipation rating of 227W is lower than the original part; thermal analysis is required for applications approaching maximum power levels.

APT18M80B (Microchip Technology) qualifies as a direct substitute with 800V Vdss and 19A continuous drain current matching the original specification. This part carries Active product status and ROHS3 compliance. Power dissipation rating of 500W exceeds the original 350W specification, providing thermal margin. On-state resistance of 530 mOhm is higher than the original 380 mOhm; power loss analysis is required for high-frequency switching applications.

Limited Substitutes (600V Rating):

IXFH18N60P (IXYS) and IXFH22N60P3 (IXYS) operate at 600V Vdss, which is 200V below the original 800V specification. These parts are suitable only for applications where the maximum operating voltage does not exceed 600V. Both parts carry Active product status and ROHS3 compliance. IXFH22N60P3 provides higher current capacity (22A) and lower on-state resistance (360 mOhm), making it preferable for current-limited applications.

Limited Substitute (800V Rating, Reduced Current):

SPW11N80C3FKSA1 (Infineon Technologies) operates at 800V Vdss but provides only 11A continuous drain current, which is 8A below the original 19A specification. This part carries Not For New Designs product status, limiting its use to legacy system maintenance. Power dissipation rating of 156W is significantly lower than the original 350W specification.

Compliance and Regulatory Status:

All substitute parts listed maintain ROHS3 compliance and REACH Unaffected status, matching the original part's regulatory posture. All parts are classified under ECCN EAR99 and HTSUS 8541.29.0095, consistent with the original component.

Frequently Asked Questions (FAQ)

Q: Can SPW17N80C3FKSA1 replace STW18NK80Z in all applications?

A: SPW17N80C3FKSA1 meets the 800V voltage requirement and provides 17A continuous current, which is 2A below the original 19A specification. Direct replacement is possible in applications where the actual operating current does not exceed 17A. The lower power dissipation rating (227W versus 350W) requires thermal verification for high-power applications. Gate charge and input capacitance are significantly lower, improving switching performance.

Q: What is the key difference between APT18M80B and SPW17N80C3FKSA1?

A: APT18M80B matches the original 19A current specification exactly and provides higher power dissipation (500W versus 227W), offering greater thermal margin. SPW17N80C3FKSA1 provides lower on-state resistance (290 mOhm versus 530 mOhm) and significantly lower gate charge (177 nC versus 120 nC), resulting in lower switching losses. Selection depends on whether the application is current-limited or switching-loss-limited.

Q: Why are IXFH18N60P and IXFH22N60P3 listed as substitutes if they have lower voltage ratings?

A: These parts are listed as limited substitutes for applications where the maximum operating voltage does not exceed 600V. They are not suitable for circuits designed to operate at the full 800V specification. Both parts carry Active product status and provide improved switching characteristics through lower gate charge and input capacitance.

Q: Is SPW11N80C3FKSA1 suitable for new designs?

A: SPW11N80C3FKSA1 carries Not For New Designs product status. This part is suitable only for maintenance and repair of existing systems. The 11A current rating is also 8A below the original specification, making it unsuitable for applications requiring the full 19A capacity.

Q: Are all substitute parts available in TO-247-3 packaging?

A: All substitute parts listed are compatible with TO-247-3 through-hole mounting. APT18M80B is supplied in Tube packaging, while SPW17N80C3FKSA1, SPW11N80C3FKSA1, IXFH18N60P, and IXFH22N60P3 are also supplied in Tube packaging. Packaging format does not affect electrical or mechanical compatibility.

Q: What is the impact of lower gate charge on circuit design?

A: Lower gate charge reduces the energy required to switch the MOSFET on and off, decreasing gate driver power consumption and enabling faster switching transitions. Parts with lower gate charge (such as IXFH22N60P3 at 38 nC) require less sophisticated gate drive circuitry compared to the original STW18NK80Z (250 nC). This can simplify circuit design and reduce component count in gate drive stages.

Q: Can I use IXFH22N60P3 in a 800V application?

A: No. IXFH22N60P3 is rated for maximum 600V drain-to-source voltage. Using this part in an 800V application will result in device failure. This part is suitable only for applications where the maximum operating voltage is 600V or lower.

Q: What thermal considerations apply when substituting with APT18M80B?

A: APT18M80B provides higher power dissipation rating (500W versus 350W), which generally indicates better thermal performance. However, on-state resistance is higher (530 mOhm versus 380 mOhm), resulting in increased conduction losses at rated current. Thermal analysis should verify that junction temperature remains within the -55°C to 150°C operating range under worst-case conditions.

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